VHF-UHF BAND LOW NOISE AMPLIFIER Search Results
VHF-UHF BAND LOW NOISE AMPLIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| NFMJMPL226R0G5D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| NFMJMPC156R0G3D | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| NFM31PC276D0E3L | Murata Manufacturing Co Ltd | Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose | |||
| TC75S67TU |
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Operational Amplifier, 2.2V to 5.5V, Low Noise type:VNI=6nV/√Hz@1kHz, SOT-353F | Datasheet | ||
| CO-213UHFMX20-010 |
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Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft |
VHF-UHF BAND LOW NOISE AMPLIFIER Datasheets Context Search
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VHF-UHF Band Low Noise Amplifier
Abstract: TOSHIBA Transistor IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S14T UHF transistor GHz
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MT3S14T VHF-UHF Band Low Noise Amplifier TOSHIBA Transistor IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S14T UHF transistor GHz | |
MT3S12TContextual Info: MT3S12T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 1.7 dB, |S21e| = 4.5 dB f = 2 GHz |
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MT3S12T 0022g MT3S12T | |
MT3S11TContextual Info: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz |
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MT3S11T 0022g MT3S11T | |
transistor amplifier VHF/UHF
Abstract: VHF-UHF Band Low Noise Amplifier mt3s18 VHF transistor amplifier circuit
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MT3S18T 0022g transistor amplifier VHF/UHF VHF-UHF Band Low Noise Amplifier mt3s18 VHF transistor amplifier circuit | |
UHF transistor GHz
Abstract: MT3S12T
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MT3S12T 0022g UHF transistor GHz MT3S12T | |
VHF-UHF Band Low Noise Amplifier
Abstract: IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T
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MT3S11T 0022g VHF-UHF Band Low Noise Amplifier IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T | |
MT3S04AFSContextual Info: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 2 0.35±0.05 • • 0.6±0.05 VHF~UHF Band Oscillator Applications 0.2±0.05 0.15±0.05 VHF~UHF Band Low-Noise Amplifier Applications |
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MT3S04AFS MT3S04AFS | |
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Contextual Info: MT3S18T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S18T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 1.4 dB, |S21e| = 12 dB f = 1 GHz |
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MT3S18T 0022g | |
MT3S14TContextual Info: MT3S14T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications • • Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 7 dB f =2GHz |
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MT3S14T MT3S14T | |
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Contextual Info: MT3S12T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S12T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 1.7 dB, |S21e| = 4.5 dB f = 2 GHz |
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MT3S12T 0022g | |
MT3S11TContextual Info: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz |
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MT3S11T 0022g MT3S11T | |
MT3S14TContextual Info: MT3S14T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S14T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Buffer Applications • • Superior performance in buffer applications Superior noise characteristics : NF = 1.7 dB, |S21e|2 = 7 dB f =2GHz |
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MT3S14T MT3S14T | |
MT3S03AS
Abstract: MT3S07S MT6L62AS
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MT6L62AS MT3S00 S21e2 MT3S03AS MT3S07S MT6L62AS | |
MT3S04AS
Abstract: MT3S07S MT6L61AS
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MT6L61AS S21e2 MT3S04AS MT3S07S MT6L61AS | |
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MT3S04AS
Abstract: MT3S07S MT6L61AE
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MT6L61AE MT3S07S MT3S04AS S21e2 MT3S04AS MT3S07S MT6L61AE | |
MT3S03AS
Abstract: MT3S07S MT6L62AE
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MT6L62AE MT3S07S MT3S03AS S21e2 MT3S03AS MT3S07S MT6L62AE | |
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Contextual Info: MT6L62AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Maximum Ratings Ta = 25°C Characteristics Rating Symbol Unit Q1 Q2 Collector-base voltage VCBO 10 10 |
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MT6L62AT MT3S07S MT3S03AS 000707EAA1 S21e2 | |
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Contextual Info: MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO |
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MT6L61AT MT3S07S MT3S04AS | |
MT6L62AEContextual Info: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO |
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MT6L62AE MT3S07S MT3S03AS MT6L62AE | |
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Contextual Info: MT6L62AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO |
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MT6L62AT MT3S07S MT3S03AS | |
MT6L62AT
Abstract: MT3S03AS MT3S07S
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MT6L62AT MT6L62AT MT3S03AS MT3S07S | |
MT3S04AS
Abstract: MT3S07S MT6L61AE
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MT6L61AE MT3S04AS MT3S07S MT6L61AE | |
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Contextual Info: MT6L61AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage VCBO |
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MT6L61AE MT3S07S MT3S04AS | |
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Contextual Info: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage |
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MT6L62AE | |