VGU 6 Search Results

74406

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closed caption 708

Contextual Info: < +2. < 6GNGXKUKQP %QPVTQNNGT YKVJ 1P 5ETGGP &KURNC[     2TQFWEV $NQEM &KCITCO GPGTCN &GUETKRVKQP - $[VGU 41/ < %QTG 4#/ #&% 15& 29/ +% +1 2QTVU 1P 5ETGGP &KURNC[ 15& GCVWTGU › › › › Displays of up to 10 Rows by 24 Columns with 512 Characters

P46 transistor

Abstract: P44 transistor P47 transistor
Contextual Info: <& .1981.6# ' < 162 /+%41%10641.'4 9+6* #&% 2$+44 2TQFWEV $NQEM &KCITCO -G[ GCVWTGU • 32K bytes of OTP EPROM • 256 bytes of executable RAM • 8-bit sigma delta A/D converter with external voltage references (not available in the 28-pin configuration)

Contextual Info: Angel Debug Protocol Document number: ARM DUI 0052C Issued: Sept 1999 Copyright ARM Ltd. 1997-1999 Open Access Proprietary Notice Copyright © 1997, 1998, 1999 ARM Ltd. ARM and the ARM Powered logo are trademarks of ARM Ltd. Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or

Contextual Info: %#46'<+#0 6*' %#46'<+#0 '/$'&&'& $+6 4+5%&52 241%'5514 2$ 24'.+/+0#4; 241&7%6 $4+' %#46'<+#0 $.1%- &+# 4#/ • Conditional Move instructions to eliminate spurious branches -$ +PUVT %CEJG -$ &CVC %CEJG • 64→32 Funnel shifter $KV 4+5%&52 %QTG

Contextual Info: %#46'<+#0 6*' %#46'<+#0 '/$'&&'& $+6 &52 241%'5514 2$&52 24'.+/+0#4; 241&7%6 $4+' %#46'<+#0 $.1%- &+# 4#/ • Conditional Move instructions to eliminate spurious branches -$ +PUVT %CEJG -$ &CVC %CEJG • 64→32 Funnel shifter $KV 4+5%&52 %QTG

mig30j103h

Contextual Info: MIG30J103H TOSHIBA TOSHIBA INTELLIGENT GTR MODULE M i fi ^ n SILICON N CHANNEL IGBT 1 1 n ^ h HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent GTR Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection.

strongArm

Contextual Info: Angel Debug Protocol Messages Document number: ARM DUI 0053D Issued: Sept 1999 Copyright ARM Ltd 1997-1999 Open Access Proprietary Notice Copyright © 1997, 1998, 1999 ARM Ltd. ARM and the ARM Powered logo are trademarks of ARM Ltd. Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or

Contextual Info: SILICON N CHANNEL JUNCTION TYPE FIELD EFFECT TRANSISTOR 2SK1875 U nit in mm H IG H FREQ U EN CY A M P LIF IE R A PP LIC A T IO N S . AM H IG H FREQUENCY A M P LIF IE R A PP LIC A T IO N S . 1.25 ±0. 1 A U D IO FREQUENCY A M P LIF IE R A PP LIC A T IO N S .

mst 702 lf

Abstract: BUK995-60A
Contextual Info: Philips Com ponents Data sheet Preliminary specif ication status date of issue March 1991 90 BUK995-60A PowerMOS transistor Logic Level SensorFET SbE ]> P H I L IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power

73E05

Abstract: 73E-05 abb inverter protection single phase igbt based inverter 200 amps circuit 97E-05
Contextual Info: Application Note Paralleling of IGBT modules Paralleling of modules or paralleling of inverters becomes necessary, if a desired inverter rating or output current can not be achieved with a single IGBT module as switch. From an economic point of view paralleling of modules

Contextual Info: The OET series provides a selection of ultra high efficiency, high density triple output isolated DC-DC converters, with up to 25W of output power. OET units offer either +3.3V, or +5V as a main output, and ±12V auxiliary outputs. Remote shutdown is provided, and input pi

2SK244

Abstract: 49842 2SK2441 25K24
Contextual Info: Ordering number: EN 4984A 2SK2441 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features •Low ON resistance. ■Ultrahigh-speed switching. • 2.5V drive. A bsolute M axim um R atings at Ta = 25°C Drain-to-Source Voltage V dss Gate-to-Source Voltage

74F3040

Contextual Info: Philip« Semiconductors-Signctics Document No. 853-0023 ECN No. 98639 Date of issue January 29, 1990 Status Product FAST 74F3040 30£2 Une Driver Dual 4-Input NAND 30Q Line Driver FAST Products TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL

LT 7247

Abstract: MIG30J103HB gtr driver TLP559 oti0
Contextual Info: TOSHIBA MIG30J103HB TOSHIBA INTEGENT GTR MODULE SILICON N CHANNEL IGBT MIG30J1 03HB HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent GTR Module th a t include IGBT drive circuits, overcurrent, undervoltage lockout, and overtemperature protection.

MIG30J103HB

Abstract: TLP559
Contextual Info: TOSHIBA M IG 3 0 J1 0 3 H B TOSHIBA INTEGENT POWER MODULE SILICON N CHANNEL IGBT MIG30J1 03HB HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and

P54/74PCT521

Contextual Info: P54/74FCT521 /A/B/C P54/74PCT521 /A/B/C ULTRA-HIGH SPEED CMOS 8-BIT IDENTITY COMPARATORS FEATURES • Function, Pinout, and Drive Compatible with the FCT and F Logic ■ Outputs Meet Levels Required for CMOS Static RAM Low Power Standby Mode ■ FCT-C speed at 4.5ns max. (Com'l)

upd3574d

Abstract: CMOS-5 NEC
Contextual Info: INEC •i —'.I* .—ir*- D ATASH EET . . -»-V-' . MOS INTEGRATED CIRCU IT I b b i r o n d e vice ¿ ¿ P D 3 5 H 7 4 2 592-BIT CCD LINEAR IMAGE SENSOR The jjPD3SH74 it a 2 592-bit linear image sensor consisting of charge coupled devices CCDs , which convert light to voltage.

MIG30J103H

Abstract: TLP559 TLP559 motor drive
Contextual Info: T O SH IB A MIG30J103H TOSHIBA INTELLIGENT PO W ER MODULE SILICON N CHANNEL IGBT MIG30J103H HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Intelligent Power Module th a t include IGBT drive circuits, overcurrent, undervoltage lockout, and

SCR 40 RIA 120

Contextual Info: International H>HRectifier s e r ie s b 2s r ia / b 25H2s SCR Power Modules 25A Features • ■ ■ ■ ■ ■ ■ ■ G lass passivated junctions for greater reliability Electrically isolated base plate 3 5 0 0 V RMS A vailable up to 1200 V RRM, V DRM

Photocoupler Q 817

Abstract: 817 photocoupler PC 814 photocoupler mig20j103h
Contextual Info: T O S H IB A M IG 20 J10 3H MIG20J1 03H TO SH IBA INTELLIGENT GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS M O T O R C ONTRO L APPLICATIONS • Intelligent GTR Module th at include IGBT drive circuits, overcurrent, undervoltage lockout, and

0J103H

Contextual Info: TOSHIBA M IG 3 0J103 H TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL IGBT MI G30J 1 03H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • Intelligent Power Module that include IGBT drive circuits, overcurrent, undervoltage lockout, and

OM6214SS

Abstract: OM6215SS OM6216SS OM6217SS
Contextual Info: OM6214SS OM6216SS OM6215SS OM6217SS TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES • Two Isolated MOSFETs In A Hermetic Metal Package • Fast Switching, Low Drive Current • Ease of Paralleling For Added Power

EN3530

Abstract: VPA18 transistor c 2060
Contextual Info: [Ordering number: EN3530 FBET Hybrid IC SA0YO F VPA18 No. 3530 Video Pack, Video Output Amplifier for Ultrahigh-resolution CRT Displays i - OVERVIEW - / / PINOUT The VPA18 is a composite, single-channel, video output amplifier 1C for ultrahigh-resolution monochrome or