VFBGA 120 Search Results

LV 1084 73

Abstract: LV 373A BGA PACKAGE thermal profile LV 1084 land pattern for tvSOP 90 ball VFBGA micro pitch BGA VA244 VFBGA LVTH2245
Contextual Info: Application Report SZZA028A - November 2001 8-Bit Linear and Logic Families in 20-Ball, 0.65-mm Pitch, Very-Thin, Fine-Pitch BGA VFBGA Packages Frank Mortan and Mark Frimann Standard Linear & Logic ABSTRACT Texas Instruments 20-ball MicroStar Jr. package is a standardized JEDEC VFBGA

VFBGA 120

Abstract: VFBGA package tray tray 23X23 10x14 239.2 AN 7823 chippac tray 8X14 vFBGA* 96 bALL
Contextual Info: FBGA-SD Fine Pitch Ball Grid Array - Stacked Die • FBGA-SD: Laminate substrate based enabling 2 & 4 layers of routing flexibility • FBGA-T-SD: Single metal layer tape based substrate with dense routing & good electrical performance • Available in 1.4mm LFBGA-SD , 1.2mm (TFBGASD/TFBGA-T-SD), 1.0mm (VFBGA-SD/VFBGA-TSD) & 0.80mm (WFBGA-SD) maximum package

CSR BC212

Abstract: MDR741F CSR BLUECORE VIRTUAL MACHINE CSR BlueCore 4 Application Program Interface BlueCore 3 csr bluetooth csr BC02 BlueCore 2 External casira casira csr crystal trim kit BC212015ADN-E4
Contextual Info: Product Data Sheet Device Features BlueCore 2-External Low power 1.8V operation TM Small footprint in 96-Ball VFBGA Package 6x6mm Single Chip Bluetooth System Fully qualified Bluetooth component Full speed class 2 Bluetooth operation with full 7 slave piconet support

BCR100

Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

MT45W8MW16BGX

Abstract: MT45W8MW16BGX-701LWT 700000H-7FFFFFH
Contextual Info: PRELIMINARY‡ 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc

SR52

Abstract: FY618 SR-52
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

smd transistor bq

Abstract: A22 SMD CODE SMD MARKING g3 transistor smd marking BA RE FY616 A22 SMD MARKING CODE AG qd SMD smd code book 6e smd marking g8 TRS.150
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

micron memory sram

Abstract: a22 package marking label infineon Micron 32MB NOR FLASH DEVICE MARKING CODE table dram zip INFINEON transistor marking label infineon application note marking code C5 RCR Resistor
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST CellularRAM 1.5 MEMORY 128Mb BURST CellularRAMTM 1.5 MT45W8MW16BGX Features Figure 1: Ball Assignment 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • Vcc, VccQ Voltages 1.7V–1.95V Vcc 1.7V–1.95V VccQ

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB MT45W2MW16BFB Features • • • • • Figure 1: Ball Assignment 54-Ball VFBGA Single device supports asynchronous, page, and burst operations VCC, VCCQ Voltages

Contextual Info: CYWB0124AB West Bridge : Antioch™ USB/Mass Storage Peripheral Controller 1.0 Features • • • • DMA slave support Ultra low power, 1.8V core operation Low power modes Small footprint, 6x6mm VFBGA and less than 4x4mm WLCSP • Selectable clock input frequencies

Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284L30 1.8V Low Voltage, Extended Temperature Features Figure 1: 80-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Buffered fast programming algorithm Buffered FPA for

FX109

Abstract: FY108 "NOR Flash" intel 28f MT28F644W18 FY113 FX113 FW117 fw12 FW118 FY114
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

Contextual Info: PRELIMINARY‡ 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W4ML16PFA Features MT45W2MW16PFA MT45W2ML16PFA Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns

Contextual Info: 4 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size Interpage read access: 70ns, 85ns

FX110

Abstract: FX108
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W30 1.8V Low Voltage, Extended Temperature Features Ball Assignment 56-Ball VFBGA • Flexible 4Mb multi-partition architecture • Single word 16-bit data bus Support for true concurrent operation with zero

Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST CellularRAM MEMORY BURST CellularRAMTM MT45W4MW16BFB Features Figure 1: 54-Ball VFBGA • Single device supports asynchronous, page, and burst operations • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Random Access Time: 70ns

FX119

Abstract: FX117
Contextual Info: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F644W18 MT28F644W30 1.8V Low Voltage, Extended Temperature Features • • • • • • • Figure 1: 56-Ball VFBGA Flexible 4Mb multipartition architecture Single word 16-bit data bus Support for true concurrent operation with zero latency

FY618

Abstract: FY617
Contextual Info: 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA Dedicated commands to decrease programming times for both in-factory and in-system operations Fast programming algorithm FPA for fast PROGRAM

JESD51-9

Abstract: VFBGA package tray AN 7823 JESD51-2 vFBGA* 96 bALL WFBGA lfbga Encapsulation thermal resistance TRAY 15X15 tfBGA PACKAGE thermal resistance tray vfbga
Contextual Info: FBGA Fine Pitch Ball Grid Array • Array molded, cost effective, space saving package solution • Available in 1.40mm LFBGA , 1.20mm (TFBGA), and 1.00mm (VFBGA), 0.80mm (WFBGA) and 0.55mm (UFBGA) maximum thickness • Laminate substrate based package which enables 2 and 4 layers of

SMD MARKING CODE AADV

Abstract: marking SR5 SMD MT28F1284W18 AADV
Contextual Info: ADVANCE‡ 8 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F1284W18 1.8V Low Voltage, Extended Temperature Features Figure 1: 56-Ball VFBGA • Dedicated commands to decrease programming times for both in-factory and in-system operations • Fast programming algorithm FPA for in-factory PROGRAM operation

MT48LC8M32LF

Abstract: MT48LC8M32LFB5-8 D9CCM MT48H8M32LFF5-8 MT48LC8M32 mt48h8m32lfb5 D9CCW x32TOC 09005aef80cd8d41
Contextual Info: PRELIMINARY‡ 256Mb: x32 MOBILE SDRAM MOBILE SDRAM MT48LC8M32LF, MT48V8M32LF, MT48H8M32LF - 2 MEG x 32 x 4 BANKS For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds. Features Figure 1: Pin Assignment Top View 90-Ball VFBGA

Contextual Info: 4 MEG x 16, 2 MEG x 16 ASYNC/PAGE CellularRAM MEMORY ASYNCHRONOUS CellularRAMTM MT45W4MW16PFA MT45W2MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and Page Mode interface • Random Access Time: 70ns, 85ns • Page Mode Read Access Sixteen-word page size

Contextual Info: 4 MEG x 16 ASYNC/PAGE CellularRAM 1.0 MEMORY ASYNC/PAGE CellularRAMTM 1.0 MEMORY MT45W4MW16PFA Features Figure 1: 48-Ball VFBGA • Asynchronous and page mode interface • Random Access Time: 70ns, 85ns • VCC, VCCQ Voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ