VF VQE 11 D Search Results

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

RG-910

Abstract: 2mb1100 2MBI100PC-140 ic l00a M233
Contextual Info: 2MBI100PC-140 IG B T M o d u le s IGBT Modules P s e rie s 1400V/100A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

Contextual Info: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module

Contextual Info: FZ 400 R 06 KL 2 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,089 °C/W RthCK pro Baustein / per module 0,03 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

bup3140

Abstract: BUP 3140 GPT05155 BUP 300 L30 diode 4 pin
Contextual Info: SIEMENS BUP 314D IGBT With Antiparallei Diode Preliminary data • Low forward voltage drop • High switching speed • Low tail current • Latch-up free • Including fast free-wheel diode Pin 1 Pin 2 G Type BUP 314D fc VCE 1200V 42A Pin 3 E C Package Ordering Code

7B30A60B

Abstract: diode pk 752 inverter 3phase 220 volt pms Bridge Rectifier
Contextual Info: MOTOROLA Order this document by MHPM7B30A80B/D SEMICONDUCTOR TECHNICAL DATA M HPM 7B30A60B Hybrid Power Module Meters!« Praftmd Devtee Integrated Power Stage for 3.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake translstor/dlode In a single convenient package. The output

sm3k

Abstract: siemens igbt BSM 150 Gb 160 d C67070-A2300-A70 47D10 120DN2
Contextual Info: SIEMENS 3 lpf- <g ^ q BSM 200GB120DN2 lGBT Power Module - Half-bridge • Including fast free-wheeling diodes * Package with insulated metal base plate Type BSM200GB 120 DN2 VcE h 1200V 290A Package Ordering Code HALF-BRIDGE 2 C67070-A2300-A70 Maximum Ratings

Contextual Info: 7 = 3 9 - 3 / F 6 - 15R 10 K EU P E C SEE Transistor D-ansistor Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte Vces Maximum rated values 1000 V 15 A le D • 3403217 D 000270 70S «UPEC Thermische Eigenschaften Thermal properties DC, pro Baustein / per module

itw 104 600v

Abstract: MIG25Q90
Contextual Info: TO SH IBA TEN TATIVE MIG25Q904H T O S H IB A IN T E G R A T E D IG B T M O D U L E SILIC O N N C H A N N E L IG B T MIG25Q904H H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P P L IC A T IO N S • In teg ra te s Inverter, Converter and B rake

Contextual Info: MG600Q1US41 HIGH POWER SW ITCHING APPLICATIONS. MOTOR CO N TRO L APPLICATIONS. High Input Impedance H ighspeed : tf= 0.5/iS Max. Low Saturation Voltage : V cE (sat) = 4.0V (Max.) Enhancement-Mode : TOSHIBA 2-109E1A Outline (See page 3 for the device outline)

2mb1150pc

Abstract: 2MBI150PC-140 M233 2mbi
Contextual Info: 2MBI150PC-140 IGBT Modules IGBT ModlllGS P series 1400V / 150A 2 in one-package • Features • Small temperature dependence of the turn-off switching loss • Easy to connect in parallel •W ide RBSOA square up to 2 times of rated current and high shortcircuit withstand capability

MHPM7B8A120A

Abstract: td-100 6503A
Contextual Info: MOTOROLA Order this document by MHPM7BBA120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B8A120A Hybrid Power Module Motorola Prtfwnti D*v m Integrated Power Stage for 1.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake translstor/dlode In a single convenient package. The output

BSM15GD100D

Abstract: C160 004S7 VM305171
Contextual Info: bGE D • fl235bG5 0DMS712 Tb3 ■ SIEG SIEMENS SIENENS AKTIENûESELLSCHAF ~TïJ3rC7 IGBT Module BSM15GD100D Preliminary Data V CE = 1000 V = 6 x 25 A at Tc = / c = 6 x 15 A at T c = 80 ‘C Ic • • • • • 25 C Power m odule 3-phase full bridge Including fast free-wheel diodes

TLP523

Abstract: VQE 22 led VQE 24 led 11-5B2 E67349 TLP523-2 TLP523-4 Scans-009098
Contextual Info: TO SHIBA TLP523,TLP523-2,TLP523-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP523, TLP523-2, TLP523-4 PROGRAMMABLE CONTROLLERS DC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP523, -2 and -4 consists of a gallium arsenide infrared emitting diode coupled with a silicon, darlington connected,

g4pc50fd

Abstract: g4pc50 g4pc50f g4p-c50 g4pc IRG4PC50FD IRG4PC50F
Contextual Info: International IGR Rectifier PD 9.1469A IRG4PC50FD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast CoPack IGBT • Fast: Optimized for medium operating frequencies 1 -5 kHz in hard switching, >20 kHz in resonant mode .

Contextual Info: _ _ _ _ 1-Pack IGBT 1M B I [IT L S Ê îr D S O Ë M IGBT MODULE N series I Outline Drawing • Features -10l±i— —93iU - Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance

siemens igbt BSM 200 GA 120

Abstract: 1C00 siemens bsm 284 f siemens R9
Contextual Info: bGE » • flEBSbOS 0045^20 b3^ * S I E 6 SIEMENS SIEMENS AKTIEN6ESELLSCHAF BSM 300 GA 100 D IGBT Module Preliminary Data VCE = 1000 V / c = 400 A at Tc = 25 C / c = 300 A at Tc = 80 C • • • • • Power module Single switch Including fast free-wheel diodes

MG10G6EL2

Abstract: w327 mg10g
Contextual Info: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.

Contextual Info: Not for new designs Low V IGBT with Diode High Speed IGBT with Diode IXSH 20 N60U1 IXSH 20 N60AU1 Combi Packs v CES ^C25 VC E sat 600 V 600 V 40 A 40 A 2.5 V 3.0 V <?C G Short Circuit S O A Capability OE Symbol Test Conditions VCES ^ v CGR Maximum Ratings

siemens igbt BSM 300

Abstract: siemens igbt BSM 200 GA 120 NC4000
Contextual Info: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes

30n60

Abstract: IXGH30N60U1 IXC 844 30N60U1 n60u 30N60A n60u1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH30 N60U1 IXGH30 N60AU1 VCES ^C25 V CE(sat) 600 V 600 V 50 A 50 A 2.5 V 3.0 V Combi Packs Symbol Test Conditions Maximum Ratings v CES T0 = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M£2

MIG20J951H

Contextual Info: TOSHIBA INTEGRATED GTR MODULE MIG20J951H Unit in mm High Power Switching Applications 1S.3Í1.0 15.3 Í 1.0 Motor Control Applications • Integrates Inverter, Converter and Brake Power Circuits in One Package. • Output Inverter Stage : 302OA/6OOV High Speed Type IGBT

Contextual Info: FZ 600 R 06 KF 3 Transistor Transistor Thermische Eigenschaften Thermal properties DC, pro Baustein / per module 0,057 RthJC Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values 600 V 600 A RthCK VcES le c/w pro Baustein / per module

Contextual Info: MG100Q2YS42 Unit in inm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • High Input Impedance High Speed : tf=0.5//s Max. trr = 0.5//s(Max.) Low Saturation Voltage : VcE(sat) = 4-0V (Max-) Enhancement-Mode Includes a Complete Half Bridge in One