VERY HIGH TRANSCONDUCTANCE Search Results

GY50NC60WD

Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■

Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 3 2 1 ■ Very high frequency inverters, UPS

GY50NC60WD

Abstract: STGY50NC60WD
Contextual Info: STGY50NC60WD 50 A, 600 V, ultra fast IGBT Features • Very high frequency operation ■ Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications 1 ■ Very high frequency inverters, UPS ■

STGW30NC60VD

Abstract: GW30NC60VD
Contextual Info: STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency inverters, UPS ■ Motor drive

Contextual Info: STGW30NC60VD 40 A, 600 V, very fast IGBT with Ultrafast diode Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Applications ■ High frequency inverters, UPS ■ Motor drive

GE50NC60VD

Abstract: STGE50NC60VD schematic inverter STGE50NC60VD
Contextual Info: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters

Contextual Info: STGE50NC60VD 50 A - 600 V very fast IGBT Features • High current capability ■ High frequency operation ■ Low CRES/CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode Applications ISOTOP ■ High frequency inverters

Contextual Info: LS5301 •PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL J-FET LINEAR SYSTEMS Linear Integrated Systems ¡FEATURES Plastic HIGH GAIN 3 ^ = 0.040 nm ho TYPICAL VERY HIGH INPUT IMPEDANCE L = 0.100 pA TYPICAL LOW POWER Vnc, m= 0.8 V TYPICAL _GS O IT _

cfy siemens

Abstract: CFY77-10 cfy77 HEMT marking P 059 906 051 CFY77-08 Q62702-F1549 Q62702-F1559 cfy 14 siemens HEMT marking K
Contextual Info: AlGaAs / InGaAs HEMT CFY 77 Datasheet Features * Very low noise * Very high gain * For low noise front end amplifiers up to 20 GHz * For DBS down converters

Contextual Info: / S 7 S GS-THOM SON ^7 # » M g(M [I[L[I(g¥[M)Rl(gS STVHD90 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS STVHD90 50 V • • • • • • ^DS(on) fi 0.023 •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT

STVHD90

Contextual Info: Æ 7 SGS-THOMSON STVHD90 7 Æ „ HO g (S [iL[i(g¥®(ô)iQ(gi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA • • • • • • TYPE Voss R DS(on) STVHD90 50 V 0.023 fi •d 52 A VERY HIGH DENSITY VERY LOW Rds (on) VERY HIGH CURRENT

schematic diagram UPS inverter

Abstract: STGW50HF65SD IGBT 15A TO-3P
Contextual Info: STGW50HF65SD STGWT50HF65SD 60 A, 650 V, very low drop IGBT with soft and fast recovery diode Datasheet - preliminary data Features • Very low on-state voltage drop  Low switching off  High current capability 2  Very soft Ultrafast recovery antiparallel diode

A High Linearity Darlington Intermediate Frequency (IF) Amplifier for Wide Bandwidth Applications

Abstract: DARLINGTON RF
Contextual Info: A High Linearity Darlington Intermediate Frequency IF Amplifier for Wide Bandwidth Applications This article describes the design of a very high linearity, wideband intermediate frequency (IF) amplifier. The design has a very flat gain response and most of the circuit

STGBL6NC60D

Abstract: STGBL6NC60DT4 STGDL6NC60D STGDL6NC60DT4 STGFL6NC60D STGPL6NC60D GFL6NC60D GPL6NC60D
Contextual Info: STGBL6NC60D - STGDL6NC60D STGFL6NC60D - STGPL6NC60D 600 V - 6 A hyper fast IGBT Features • Low CRES / CIES ratio no cross-conduction susceptibility ■ Very soft ultra fast recovery antiparallel diode 3 1 ■ Very high frequency operation ■ High frequency lamp ballast

GW50HF60SD

Abstract: ST IGBT code marking STGW50HF60SD FIGURE15
Contextual Info: STGW50HF60SD 60 A, 600 V, very low drop IGBT with soft and fast recovery diode Features • Very low on-state voltage drop ■ Low switching off ■ High current capability ■ Very soft ultra fast recovery antiparallel diode Application ■ PV inverter ■

Contextual Info: LS5301. PF5301 VERY HIGH INPUT IMPEDANCE N-CHANNEL J-FET LINEAR SYSTEMS Linear Integrated Systems FEATURES HIGH GAIN Plastic = 0.040 timho TYPICAL Z' O d \ O *H V p/ VERY HIGH INPUT IMPEDANCE lQ= 0.100 pA TYPICAL g LOW POWER VQS(om= 0.8 V TYPICAL ABSOLUTE MAXIMUM RATINGS

CA5470

Abstract: CA5470E CA5470M CA5470M96
Contextual Info: CA5470 November 1996 Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output Features Description • High Speed CMOS Input Stage Provides - Very High ZI. . . . . . . . . . . . . . . . 5TΩ 5 x 1012Ω (Typ) - Very Low lI . . . . . . . . . . . 0.5pA (Typ) at 5V Operation

STGB3NC120HD

Abstract: STGF3NC120HD 11089 STGP3NC120HD GF3NC120HD Gb3NC120HD STGB3NC120HDT4 stgb3nc120 IGBT GF3NC120HD
Contextual Info: STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB • High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode 3 1 Applications ■ Home appliance ■ Lighting 1 2 TO-220FP

Contextual Info: STGB3NC120HD STGF3NC120HD, STGP3NC120HD 7 A, 1200 V very fast IGBT with ultrafast diode Features TAB • High voltage capability ■ High speed ■ Very soft ultrafast recovery anti-parallel diode 1 Applications ■ Home appliance ■ Lighting 3 3 1 2 TO-220FP

gw20nc60vd

Abstract: STGW20NC60VD ST IGBT code marking 575 L 80 9983 schematic diagram UPS gw20nc60v
Contextual Info: STGW20NC60VD 30 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off

GW30NC60VD

Abstract: STGW30NC60VD schematic diagram UPS schematic diagram UPS 600 Power free schematic diagram UPS inverter
Contextual Info: STGW30NC60VD 40 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off

UC3843 application note soft start

Abstract: 24v dc power supply with uc3842 uc3843 12v to 24v uc3844 schematic diagram 24v dc dc uc3842 dc/dc converter 24v application circuits uc3843 step down uc3843 step up UC3842 smps design UC3843 step up converter uc3843 flyback supply
Contextual Info: L296 L296P HIGH CURRENT SWITCHING REGULATORS . . . . . . . 4 A OUTPUT CURRENT 5.1 V TO 40 V OUTPUT VOLTAGE RANGE 0 TO 100 % DUTY CYCLE RANGE PRECISE ±2 % ON-CHIP REFERENCE SWITCHING FREQUENCY UP TO 200 KHz VERY HIGH EFFICIENCY (UP TO 90 %) VERY FEW EXTERNAL COMPONENTS

GW20NC60

Abstract: STGW20NC60VD
Contextual Info: STGW20NC60VD 30 A, 600 V, very fast IGBT Features • High current capability ■ High frequency operation up to 50 KHz ■ Very soft ultra fast recovery antiparallel diode Description This IGBT utilizes the advanced Power MESH process resulting in an excellent trade-off

mosfet 1500v

Abstract: L7 diode STFV4N150 STMicroelectronics DIODE marking code FV4N150 JESD97 Vdss 1500V
Contextual Info: STFV4N150 N-channel 1500V - 5Ω - 4A TO-220FH Very high voltage PowerMESH MOSFET General features Type VDSS RDS on ID Pw STFV4N150 1500V <0.7Ω 4A 40W • Avalanche ruggedness ■ Gate charge minimized ■ Very low intrinsic capacitances ■ High speed switching