VERY HIGH CURRENT SCHOTTKY DIODE Search Results

1SS286

Contextual Info: 1SS286-Silicon Schottky Barrier Diode for Various Detector, High Speed Switching Features Outline • Very low reverse current. • Detection efficiency is very good. • Sm all glass package MHD enables easy mounting and high reliability.

Hitachi DSA002712

Abstract: 1SS286
Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

1SS286

Abstract: GRZZ0002ZC-A
Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0300 Rev.3.00 May 24, 2007 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package MHD enables easy mounting and high reliability.

SMD MARKING E1

Abstract: BAT960
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 BAT960 Schottky barrier diode Preliminary specification 2002 Jun 24 Philips Semiconductors Preliminary specification Schottky barrier diode BAT960 FEATURES PINNING • High current capability PIN DESCRIPTION • Very low forward voltage

1SS286

Abstract: diode hitachi schottky DSA003641
Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching ADE-208-302A Z Rev. 1 Sep. 1995 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching HITACHI A DE-208-302A Z Rev. 1 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

1SS286

Contextual Info: 1SS286 Silicon Schottky Barrier Diode for Various Detector, High Speed Switching REJ03G0142-0200Z Previous: ADE-208-302A Rev.2.00 Nov.10.2003 Features • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

1SS286

Abstract: "1SS286" band switching diode Hitachi DSA0014
Contextual Info: ADE-208-302 Z 1SS286 Silicon Schottky Barrier Diode for Various Detector,High Speed Switching Rev. 0 Dec. 1994 Features Outline 7 • Very low reverse current. • Detection efficiency is very good. • Small glass package (MHD) enables easy mounting and high reliability.

JESD51-5

Abstract: JESD51-7 JESD-51-7
Contextual Info: Central CTLSH1-40M621H Semiconductor Corp. SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULE DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile 0.4mm , low VF Schottky diode in a small, thermal efficient,

very low reverse current

Abstract: ultra low forward voltage diode
Contextual Info: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Guard ring protected • Ultra small SMD package. Applications • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes

Contextual Info: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes

Contextual Info: 1SS06AWT SCHOTTKY BARRIER DIODE Features • • • • Very low forward voltage Very low reverse current Guard ring protected Ultra small SMD package. Applications • • • • • Ultra high-speed switching Voltage clamping Protection circuits Blocking diodes

JESD51-5

Contextual Info: Central CTLSH1-40M621H SURFACE MOUNT HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODE TINY LEADLESS MODULETM LOW VF TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M621H is a very low profile 0.4mm , low VF Schottky diode in a small, thermal efficient,

LBAT60BT1

Contextual Info: Silicon Schottky Diode LBAT60BT1 High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA ●For power supply applications ●For clamping and protection in low voltage applications ● For detection and step-up-conversion ●

FR4 substrate

Abstract: DEVICE MARKING CODE X1 ex03 AP2001 J-STD-020A SBM4150-13 SBM41 fr 4 substrate
Contextual Info: SBM4150 4A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 ADVANCE INFORMATION Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability

smd code marking book

Abstract: diode SMD MARKING CODE S
Contextual Info: 1SS06AWT SCHOTTKY BARRIER DIODE Features • Very low forward voltage • Very low reverse current • Ultra small SMD package PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 J Applications • Ultra high-speed switching • Voltage clamping • Protection circuits

BAT60B

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

BAR63-03W

Abstract: BAT60B
Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

28c10

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

SS2040

Abstract: SS2040FL MARKING CODE GP
Contextual Info: SS2040FL 2A/40V ULTRA-LOW VF SURFACE MOUNT SCHOTTKY DIODE These ultra-efficient, low VF Schottky diodes feature high current capability, while housed in a very small SOD-123 Flat Lead package. They are ideal for applications requiring maximum power dissipation per

Contextual Info: BAT60B. Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop typ. 0.24 V at IF = 10mA • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion

Contextual Info: MBRM5100H 5A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER POWERMITEÒ3 UNDER DEVELOPMENT NEW PRODUCT Features • · · · · · Guard Ring Die Construction for Transient Protection High Surge Current Capability Very Low Leakage Current High Junction Temperature Capability