VDS DISPLAY Search Results
VDS DISPLAY Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| COMBOAUDIODISPLAY |
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DRV8662 Piezo Haptic Driver with Integrated Boost Converter |
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| TPS65142RTGT |
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LCD Bias Solution For LCD Panels with 6ch WLED Driver 32-WQFN |
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| DLPC6401ZFF |
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DLP® Display Controller for High-brightness Portable Displays 419-BGA 0 to 55 |
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| TPS65632AGRTER |
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Triple Outputs AMOLED Display Power Supply 16-WQFN |
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| DLPC3436CZVB |
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DLP® Display Controller for DLP230NP (0.23 1080p) DMD 176-NFBGA |
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VDS DISPLAY Price and Stock
Toradex Inc Capacitive Touch Display 10.1" LVDSDisplay Modules 12121000CapTouchDisplay10.1"LVDS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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Capacitive Touch Display 10.1" LVDS | 9 |
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Buy Now | |||||||
| Capacitive Touch Display 10.1" LVDS | 9 |
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Buy Now | ||||||||
VDS DISPLAY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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97001A
Abstract: AN1001 AN-994
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7001A IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 97001A AN1001 AN-994 | |
AN1001
Abstract: AN-994 TO-262 Package
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IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF AN1001) O-220AB O-262 IRFS52N15DPbF AN-994. AN1001 AN-994 TO-262 Package | |
TO-262 PackageContextual Info: PD - 97001 PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits |
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IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB IRFB38N20DPbF IRFS38N20DPbF O-262 AN-994. TO-262 Package | |
AN1001
Abstract: AN-994 TP720
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97001B IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF AN1001) O-220AB O-262 AN1001 AN-994 TP720 | |
AN1001
Abstract: AN-994 IRFB52N15
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IRFB52N15DPbF IRFS52N15DPbF IRFSL52N15DPbF AN1001) O-220AB O-262 IRFS52N15DPbF AN-994. AN1001 AN-994 IRFB52N15 | |
Si4852DY
Abstract: Si4852DY-T1
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Si4852DY Si4852DY-T1 08-Apr-05 | |
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Contextual Info: Si6404DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 11 30 0.010 at VGS = 4.5 V 10 0.014 at VGS = 2.5 V 8.8 • Halogen-free • TrenchFET Power MOSFETS: 2.5 V Rated • 30 V VDS RoHS |
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Si6404DQ Si6404DQ-T1-GE3 08-Apr-05 | |
Am95C60 bContextual Info: Am8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slim-lme DIP GENERAL DESCRIPTION The Am8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display |
OCR Scan |
Am8177 200-MHz 24-pin Am8177 16-bit Am8151A Am8172 Am95C60 Am8l77 Am95C60 b | |
Si1021R
Abstract: SC-75A Si1021R-T1-E3 S-81543-Rev
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Si1021R SC-75A OT-416) 18-Jul-08 SC-75A Si1021R-T1-E3 S-81543-Rev | |
AM8177
Abstract: DD15 Am8151
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OCR Scan |
Am8177 200-MHz 24-pin Am8177 16-bit Am8151A Am8172 Am95C60 WF010561 DD15 Am8151 | |
SIHF18N50DContextual Info: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHF18N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIHF8N50DContextual Info: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness |
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SiHD3N50DA O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHD3N50D O-252) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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IRF740B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHP14N50D O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
nc 1458
Abstract: MA 1458 SIHG32N50D-GE3
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SiHG32N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 nc 1458 MA 1458 SIHG32N50D-GE3 | |
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Contextual Info: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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IRF830B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: SiHP25N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHP25N40D O-220AB 2002/95/EC 11-Mar-11 | |
irf840bContextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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IRF840B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf840b | |
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Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG22N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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IRF840B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: IRF730B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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IRF730B O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRF840B
Abstract: IRF840B free
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IRF840B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF840B IRF840B free | |