VDS DISPLAY Search Results
VDS DISPLAY Result Highlights (2)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| G46AD101211HR | Amphenol Communications Solutions | DISPLAY DUAL INTERFACE, RECEPTACLE, 0.5mm pitch with side screw hole, 19 + 20 pins, G/F Plating, Tape and Reel packing | |||
| COMBOAUDIODISPLAY | Texas Instruments | DRV8662 Piezo Haptic Driver with Integrated Boost Converter |
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VDS DISPLAY Price and Stock
Toradex Inc Capacitive Touch Display 10.1" LVDSDisplay Modules 12121000CapTouchDisplay10.1"LVDS |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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Capacitive Touch Display 10.1" LVDS | 6 |
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Buy Now | |||||||
VDS DISPLAY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
97001A
Abstract: AN1001 AN-994
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7001airfb38n20dpbfirfs38n20dpbfirfsl38n20dpbf+5 | |
AN1001
Abstract: AN-994 TO-262 Package
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irfb52n15dpbfirfs52n15dpbfirfsl52n15dpbfan1001+4 | |
TO-262 PackageContextual Info: PD - 97001 PROVISIONAL IRFB38N20DPbF IRFS38N20DPbF IRFSL38N20DPbF SMPS MOSFET Applications l High frequency DC-DC converters l Plasma Display Panel l Lead-Free HEXFET Power MOSFET Key Parameters VDS VDS Avalanche min. RDS(ON) max @ 10V TJ max Benefits |
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irfb38n20dpbfirfs38n20dpbfirfsl38n20dpbfan1001+4 | |
AN1001
Abstract: AN-994 TP720
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97001birfb38n20dpbfirfs38n20dpbfirfsl38n20dpbf+5 | |
AN1001
Abstract: AN-994 IRFB52N15
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irfb52n15dpbfirfs52n15dpbfirfsl52n15dpbfan1001+4 | |
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Contextual Info: Si4808DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A |
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si4808dysi4808dy-t108-apr-05 | |
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Contextual Info: Si4812DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A |
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si4812dy08-apr-05 | |
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Contextual Info: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V "9.0 0.028 @ VGS = 4.5 V "7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A |
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si4832dy08-apr-05 | |
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Contextual Info: Si4832DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.018 @ VGS = 10 V 9 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A |
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si4832dysi4832dy-t108-apr-05 | |
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Contextual Info: Si4830DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A |
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si4830dysi4830dy-t108-apr-05 | |
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Contextual Info: Si4810DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.0135 @ VGS = 10 V 10 0.020 @ VGS = 4.5 V 8 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A |
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si4810dysi4810dy-t108-apr-05 | |
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Contextual Info: Si4834DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A |
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si4834dysi4834dy-t108-apr-05 | |
Si4852DY
Abstract: Si4852DY-T1
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si4852dysi4852dy-t108-apr-05 | |
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Contextual Info: Si6404DQ New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 2.5-V Rated D 30-V VDS VDS (V) rDS(on) (W) ID (A) 0.009 @ VGS = 10 V 11 APPLICATIONS 30 0.010 @ VGS = 4.5 V 10 0.014 @ VGS = 2.5 V 8.8 D Battery Switch |
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si6404dq08-apr-05 | |
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Am95C60 bContextual Info: Am8177 Video Data Serializer FINAL DISTINCTIVE CHARACTERISTICS 200-MHz parallel-to-serial shift register Cascadable in increments of 16 bits • 24-pin slim-lme DIP GENERAL DESCRIPTION The Am8177 Video Data Serializer VDS is a 16-bit parallel-to-serial shift register for use in bit-mapped display |
OCR Scan |
am8177200-mhz24-pin16-bit+5 | |
Si1021R
Abstract: SC-75A Si1021R-T1-E3 S-81543-Rev
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si1021rsc-75aot-41618-jul-08+2 | |
AM8177
Abstract: DD15 Am8151
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OCR Scan |
am8177200-mhz24-pin16-bit+6 | |
SIHF18N50DContextual Info: SiHF18N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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sihf18n50do-2202011/65/eu2002/95/ec+1 | |
SIHF8N50DContextual Info: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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sihf8n50do-2202011/65/eu2002/95/ec+1 | |
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Contextual Info: SiHD3N50DA www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal design - Low area specific on-resistance - Low input capacitance (Ciss) - Reduced capacitive switching losses - High body diode ruggedness |
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sihd3n50dao-2522002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHD3N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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sihd3n50do-2522002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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sihg22n50do-247ac2002/95/ec2011/65/eu+2 | |
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Contextual Info: IRF740B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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irf740bo-220ab2002/95/ec2011/65/eu+2 | |
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Contextual Info: SiHP14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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sihp14n50do-220ab2002/95/ec2011/65/eu+2 | |