VDR 190 V Search Results

panasonic cmos image sensor

Abstract: 960H CCD mn34540pa MN39670 MW39781AE NN12084A AN12073A MN67336 MN34510PL CMOS image sensor PAL
Contextual Info: 2009 ver.2 CCD Image Sensor Panasonic's cutting-edge image sensors are key devices supporting ubiquitous society. Applications for image sensors are expanding into a wide range of fields, such as digital still cameras, through camera-equipped cellphones, mobile communications terminal, video

CY7C1021V30

Contextual Info: fax id: 1083 PRELIMINARY CY7C1021V30 64K x 16 Static RAM Features • 3.0V operation 2.7V–3.3V • High speed — tAA = 15 ns • CMOS for optimum speed/power • Low active power (L version) — 462 mW (max.) • Low CMOS Standby Power (L version) — 1.08 mW (max.)

NCV4274ADT50RKG datasheet

Abstract: A114 A115 NCV4274 NCV4274A Q100
Contextual Info: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK and D2PAK packages. The output voltage is accurate within ±2.0% or ±4.0% depending on

GLT725608-12J3

Abstract: GLT725608-15T GLT725608-15J3 GLT725608 GLT725608-20T GLT725609
Contextual Info: GLT725608/08L Ultra High Performance 32K x 8 Bit CMOS Static RAM FEATURES ◆ 32K x 8-bit organization ◆ Very high speed -10,12,15, 20 ns. ◆ Low standby power - Maximum 100 µ A for GLT725608L - GLT725608L also provides minimum 2 V data retention. ◆ Fully static operation

tja 113

Abstract: SPX2975
Contextual Info: SPX2975 400mA Low Dropout Voltage Regulator FEATURES • 5V Fixed Output ■ High Accuracy ■ Very Low Current Consumption: 70µA ■ Power-on and Under Voltage Reset ■ Reset Low Down to VOUT = 1V ■ Extremely Low Dropout Voltage ■ Short Circuit Protection

Contextual Info: SPX2975 Preliminary 400mA Low Dropout Voltage Regulator FEATURES • 5V Fixed Output ■ High Accuracy ■ Very Low Current Consumption: 60µA ■ Power-on and Under Voltage Reset ■ Reset Low Down to VOUT = 1V ■ Extremely Low Dropout Voltage ■ Short Circuit Protection

SMD L4 Regulator SOT-223

Abstract: smd CODE 95 SOT-223 NCV4274ADS33R4G NCV4274AST33T3G 8 lead sot-223 60S sot223 418af NCV4274DT33RKG
Contextual Info: NCV4274, NCV4274A 400 mA 2% and 4%Voltage Regulator Family Description The NCV4274 and NCV4274A is a precision micro−power voltage regulator with an output current capability of 400 mA available in the DPAK, D2PAK and SOT−223 packages. The output voltage is accurate within ±2.0% or ±4.0% depending on

CY7C1021V33-12ZC

Abstract: cy7c1021v33-15zi CY7C1021V33-10VC CY7C1021V CY7C1021V33-10ZC
Contextual Info: fax id: 1077 1CY 7C10 21 V PRELIMINARY CY7C1021V 64K x 16 Static RAM Features Writing to the device is accomplished by taking chip enable CE and write enable (WE) inputs LOW. If byte low enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.maxim-ic.com FEATURES § § § § § § § § § § § PIN ASSIGNMENT Low-power CMOS design Standby current - 50nA max at tA = 25°C VCC = 3.0V - 100nA max at tA = 25°C VCC = 5.5V - 1µA max at tA = 60°C VCC = 5.5V

Contextual Info: 400mA SmartLDO jpf'jsEIX/ITEOH TM SC1534 Today’s Results.Tor PRELIMINARY - September 3, 1999 T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.conn DESCRIPTION FEATURES The SC1534 is designed to maintain a glitch-free 3.3V output when at least one of two inputs, 5V VIN and

DS2016

Abstract: DS2016-100 DS2016-150 DS2016R DS2016S
Contextual Info: DS2016 2k x 8 3V/5V Operation Static RAM www.dalsemi.com FEATURES § § § § § § § § § § § Low-power CMOS design Standby current − 50 nA max at tA = 25°C VCC = 3.0V − 100 nA max at tA = 25°C VCC = 5.5V − 1 µA max at tA = 60°C VCC = 5.5V Full operation for VCC = 5.5V to 2.7V

CY7C1021V

Contextual Info: CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.) • Automatic power-down when deselected

Contextual Info: CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 PLUS247 Type A CS 60-12io1 CS 60-14io1 CS 60-16io1 IT(RMS) IT(AV)M TVJ = TVJM (lead current limit) TC = 105°C; 180° sine

DS2016

Abstract: DS2016S
Contextual Info: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V

Contextual Info: FORCE Technologies 2 Megabit CMOS SRAM FTS256S8P DESCRIPTION: The FTS256S8P is a Military 256K X 8 high-density, low-power static RAM module comprised of two 128K x 8 monolithic SRAM’s, an advanced high-speed CMOS decoder and decoupling capacitors surface

PLUS247

Contextual Info: CS 60 Phase Control Thyristor VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Part Number PLUS247 A C CS 60-12io1 CS 60-14io1 CS 60-16io1 C A G G A (TAB) C = Cathode, A = Anode, G = Gate Symbol Test Conditions

PLUS247

Contextual Info: CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 PLUS247 Type A C A G G A (TAB) CS 60-12io1 CS 60-14io1 CS 60-16io1 C = Cathode, A = Anode, G = Gate

DS2016

Abstract: DS2016S
Contextual Info: DS2016 DS2016 2K x 8 3V/5V Operation Static RAM FEATURES PIN ASSIGNMENT • Low power CMOS design • Standby current – 50 nA max at tA = 25°C VCC = 3.0V – 100 nA max at tA = 25°C VCC = 5.5V – 1 µA max at tA = 60°C VCC = 5.5V • Full operation for VCC = 5.5V to 2.7V

HM658512LP-10V

Abstract: HM658512LP-12 HM658512-10 HM658512LP-8 HM658512LP10V HM658512 HM658512LP-10 HM658512DP-8 HM658512LFP-12 HM658512DP-10
Contextual Info: HM658512 Series Maintenance only 524288-word x 8-bit High Speed Pseudo Static RAM Features Ordering Information • Single 5 V ±10% • High speed – Access time CE access time: 80/100/120 ns – Cycle time Random read/write cycle time: 130/160/190 ns

CY7C1041V33

Abstract: 1041V33
Contextual Info: V33 CY7C1041V33 256K x 16 Static RAM Features written into the location specified on the address pins A0 through A17 . If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O15) is written into the location specified on the address pins (A0 through A17).

CY7C1021V

Contextual Info: 021V CY7C1021V 64K x 16 Static RAM Features • 3.3V operation 3.0V–3.6V • High speed — tAA = 10/12/15 ns • CMOS for optimum speed/power • Low Active Power (L version) — 576 mW (max.) • Low CMOS Standby Power (L version) — 1.80 mW (max.)

Contextual Info: CS 60 Phase Control Thyristor VRRM = 1200-1600 V IT RMS = 75 A IT(AV)M = 48 A Preliminary Data Sheet VRSM VRRM VDSM VDRM V V 1300 1500 1700 1200 1400 1600 TO-247 AD Type A C A G G A (TAB) CS 60-12io1 CS 60-14io1 CS 60-16io1 C = Cathode, A = Anode, G = Gate

S1PHB15

Abstract: S1PHB15-08 S1PHB15-12 S1PHB15-14
Contextual Info: S1PHB15 Single Phase Half Controlled Bridge With Free Wheeling Diode Dimensions in mm 1mm=0.0394" Type 2 1 3 6 4 S1PHB15-08 S1PHB15-12 S1PHB15-14 S1PHB15-16 S1PHB15-18 VRSM VDSM V 900 1300 1500 1700 1900 VRRM VDRM V 800 1200 1400 1600 1800 8 Symbol Test Conditions

5962-9461109haa

Abstract: 5962-9461108HAA 5962-9461110HMA 5962-9562408HNC 5962-9461109HMA
Contextual Info: SRAM AS8S512K32 & AS8S512K32A 512K x 32 SRAM PIN ASSIGNMENT Top View SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS NC A0 A1 A2 A3 A4 A5 CS3\ GND CS4\ WE1\ A6 A7 A8 A9 A10 Vcc 9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 SMD 5962-94611 & 5962-95624 (Military Pinout)