VDD100V Search Results

2SK758

Contextual Info: Pow er F-MOS FET 2SK758 2SK758 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON re sistan c e R ds on : R ds (on) = 0 .3 3 il (typ.) • High switching ra te : tf = 45ns (typ.) Unit: mm • No secondary breakdow n ■Application

2sk75

Abstract: FLS2
Contextual Info: Power F-MOS FET 2SK759 2SK759 Silicon N-channel Power F-MOS FET • Package Dimensions ■ Features • Low ON resistance R ds on : RDs (on) = 0.25il (typ.) • High switching rate : tf=55ns (typ.) • No secondary breakdown Unit: mm ■ Application • DC-DC converter

Contextual Info: HARRIS SENICOND SECTOR m HARRIS SEMICONDUCTOR REGISTRATION PENDING Currently Available as FRL9230 D, R, H SflE D • 4305271 0045787 540 H H A S 2N7311D, 2N7311H 2N7311H Radiation Hardened P-Channel Power MOSFETs December 1992 l ° l Package Features • 3A, -200V, RDS(on) > 1.30Q

Contextual Info: SOLITRON DEVICES INC 4ÔE » • ÔBbflbDE DOÜBSöb Ofib M S O D c a t a l o g _JTailtran d«*,œ. inc. FR O pyiG T ^fï^VÏÎ^^lk: P-CHANNEL ENHANCEMENT MOS FET -2 0 0 V ,-6 .5 A , SDF9230 SDF9230 SDF9230 o.8n JAA JAB JDA FEATURES • • • • •