VCEO 25 ICM 1 Search Results

SMD BR

Abstract: 2sc3438 2sc343 2SA1368 smd b_r
Contextual Info: Transistors SMD Type High Voltage Drive Applications 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25

Contextual Info: SMD Type Product specification 2SA1368 Features High Voltage VCEO = -100V High Collector Current ICM = -800mA High Collector Dissipation PC = 500mW Small Package For Mounting Complementary to 2SC3438 Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-Base Voltage

2SA1945

Abstract: marking z*d
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter

Contextual Info: IC SMD Type Product specification 2SA1945 Features High voltage VCEO=-50V High fT: fT=150MHz typ Excellent linearity of DC forward current gain High collector current Icm=600mA Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating

power ic 5v 1A

Contextual Info: MMBT591A PNP Epitaxial Planar Silicon Transistor SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 40 V Emitter Base Voltage -VEBO 5 V Peak Pulse Current -ICM 2

iC5A

Abstract: BU406 BU408 transistor BU406 250V transistor npn 2a BU406H npn switching transistor Ic 5A
Contextual Info: BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING USE IN HORIZONTAL DEFLECTION OUTPUT STAGE TO-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Symbol Rating Unit VCBO VCEO VEBO IC ICM IB PC Tj Tstg 400 200 6 7 10 4 60 150 -65~150

BCX33

Abstract: BCX32 BCX31 BCX34 BFQ36 2N1711 Data Sheet BC337 BC338 BFX84 BFX85
Contextual Info: Transistors N-P-N silicon low/medium power transistors book 1 parts 1 and 2 cont. Type No. V c □ O o> ^ Ï o M axim um Ratings Icm I cjavi vceo V ceo (V) (V ) (A) (A) hpE Ptot m in. max. at 25°C <°C) (mW) 50 45 1.0 0.5 150 625 100 30 25 150 730 Ti fT

2SC1048

Contextual Info: High Voltage Transistors TYPE NO. CASE POLA­ RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+

tube az2

Abstract: 2n2389 2n2906 sis BSS68 BSW41 2N2369 2N2906 to92 BFX34 BSS38 BSW41A
Contextual Info: Transistors Type No. g s 3 o Drawing reference silicon low/medium power switching transistors book 1 parts 1 and 2 VCEJO VcEO <V V) Maximum Ratings IcM lc(AV) (mA) ImA) Hfe min. max. Ptot at 25°C (°C) <mW) Tj at •c fT VcE(sat) min. max. (mA) (MHz) (V)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2N5321 Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

Contextual Info: MCC TM Micro Commercial Components 2N5321
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Medium Power Silicon NPN Planar Transistor VCEO=50V ICM=2A Ptot=1.0W Tamb=25 OC

BU109

Abstract: 2150B 200v 5a transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BU109 DESCRIPTION •Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage: VCE sat = 1.0 V(Max)@ IC = 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 150 V(Min)

FMMT551

Abstract: FMMT451 DSA003698
Contextual Info: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT551 ISSUE 3 - OCTOBER 1995 FEATURES * 60 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS 100 - Normalised Gain % - (Volts) -0.8 -0.6 -0.4 -0.2 -0.01 -0.1 -1 -10 COMPLEMENTARY TYPE – PARTMARKING DETAIL –

transistor mje13007 equivalent

Abstract: mtp8p mje13007 equivalent
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

ZTX550

Abstract: ZTX551 ztx550 equivalent DSA003768
Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 1 Amp continuous current * Ptot= 1 Watt TYPICAL CHARACTERISTICS 100 hFE - Normalised Gain % VCE(sat) - (Volts) -0.8 -0.6 ZTX550 ZTX551 -0.4 IC/IB=10 -0.2

Contextual Info: CMMT491 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistor PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Marking CMMT= 491 3.0 2.8 0.14 0.48 0.38 2.6 2.4 I Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.60 0.40 J1.02 ’ I 0.89 2.00 1.80 ABSOLUTE MAXIMUM RATINGS

ZTX552

Abstract: ZTX553 ZTX553 equivalent DSA003769
Contextual Info: ZTX552 ZTX553 TYPICAL CHARACTERISTICS IB1=IB2=IC/10 td tr ns ns 100 200 -0.8 ZTX552 ZTX553 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS tf ts µS nS 3 600 ISSUE 1 – MARCH 94 FEATURES * 100 Volt VCEO * 1 Amp continuous current * Ptot=1 Watt Switching time VCE sat - (Volts)

*e13007

Abstract: bipolar transistor td tr ts tf equivalent of transistor mje13007
Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

FMMT455

Abstract: B455 DSA003695
Contextual Info: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10

Contextual Info: UTC MJE13007 NPN EPITAXIAL SILICON TRANSISTOR NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220 V

10 amp npn darlington power transistors

Abstract: FMMT38C FMMT38B 100 amp npn darlington power transistors FMMT38A DSA003692
Contextual Info: FMMT38A FMMT38B FMMT38C ISSUE 3 – AUGUST 1996 FEATURES * 60 Volt VCEO * Gain of 10K at IC=0.5 Amp TYPICAL CHARACTERISTICS I /I =100 C - Normalised Gain 1.6 -55°C 0.8 +25°C 0.6 +100°C 0.4 +175°C h V - Volts 1.0 B 0.2 0.001 0.01 0.1 1 1.4 0.8 CE 0.4 -55°C