VCE 1V Search Results

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER l-PACK • hFE= 1 0 0 -3 2 0 VCE= -2V, lc = -0.5V • hFE= 70(Min) (VCE= -2V, lc = -4A) • Low Saturation Voltage: VcE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating

KSA1242

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A

Contextual Info: 2SC3179 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1262 100max µA V IEBO VEB=6V 100max µA 6 V V(BR)CEO V 4 A hFE IC=25mA 60min VCE=4V, IC=1V 40min V IB 1 A VCE(sat) IC=2A, IB=0.2A 0.6max PC 30(Tc=25°C) W fT VCE=12V, IE=–0.2A

kst tuner

Abstract: marking code GNF STC918K kst40
Contextual Info: STC918K Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

13001 TRANSISTOR 126 package

Abstract: STC918U marking code GNF kst30
Contextual Info: STC918U Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA

ic SE 135

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

J1 3007-1

Abstract: J1 3007-2 2SC4365 ITR06656 ITR06657 ITR06658 ITR06659 ITR06660 F J1 3007-2 marking amplifier j02
Contextual Info: Ordering number:ENN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

EN3007

Abstract: 741 IC circuit applications 2SC4365 VEBO-15V
Contextual Info: Ordering number:EN3007 NPN Epitaxial Planar Silicon Transistor 2SC4365 VHF, UHF/MIX. OSC. Low-Voltage High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage operation : fT=3.0GHz typ VCE=3V : MAG=12dB typ (VCE=3V, IC=10mA) : NF=1.5dB typ (VCE=3V, IC=5mA)

sfh601-5

Abstract: CNX83A datasheet ic mct2e h11av2 equivalent TIL111 4N25 4N26 4N27 4N28 4N35
Contextual Info: 1 of 2 Transistor Output WITH Base Lead, 6pin DIP Package Current CTR Isolation Part Transfer Test Voltage Collector BVCEO VCE SAT Test Max Number Ratio Conditions RMS Current Min Min Conditions VCE=10V (KV) (mA) (V) (V) (% ) VCE(SAT) ICEO (nA) 4N25 20 min

ztx605

Abstract: FCX605 FCX605TA SOT223
Contextual Info: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low

2K 622

Abstract: FCX605 FCX605TA MARKING 605
Contextual Info: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER • hFE= 100-320 VCE = -2V, lc = -0.5V • hFE= 70(Min) (V ce = -2V, lc = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit

Contextual Info: 2SC4683 SILICON NPN EPITAXIAL TYPE PCT PROCESS TENTATIVE data STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES Excellent h^E Lineanity : ^FE(l) = «00-3200 (VCE=1V, IC=0.5A) : hFE(2) = 500 (Typ.) (VCE=1V, IC=3A) Low Collector Saturation Voltage

2SA1567

Abstract: 2SC4064 FM20 DSA0016503
Contextual Info: 2SA1567 Silicon PNP Epitaxial Planar Transistor Complement to type 2SC4064 A hFE µA –50min V VCE=–1V, IC=–6A 50min IC=–6A, IB=–0.3A –0.35max V –3 A VCE(sat) PC 35(Tc=25°C) W fT VCE=–12V, IE=0.5A 40typ MHz 150 °C COB VCB=–10V, f=1MHz

12V dc 6A motor driver

Abstract: dc motor for 24v 2SA1567 24V "DC Motor" 24V to 12V REGULATOR IC dc chopper circuit 2SA156
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

12V dc 6A motor driver

Abstract: 2SA1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)

transistor R5C

Abstract: KTC3226
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3226 EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APLICATION. FEATURES • High DC Current Gain and Excellent I l f e Linearity : hFE l =140~ 600 (VCE=1V, Ic=0.5A) : hFE(2)=70(Min.), 200(Typ.) (VCE=1V, Ic=2A).

FZT696B

Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8