VCE 1V Search Results

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) I-PACK 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER l-PACK • hFE= 1 0 0 -3 2 0 VCE= -2V, lc = -0.5V • hFE= 70(Min) (VCE= -2V, lc = -4A) • Low Saturation Voltage: VcE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating

Contextual Info: KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 VCE = -2V, IC = -0.5V • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor

Contextual Info: 2SC4065 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1568 ±12 A IC VEB=6V 60max mA IC=25mA 60min V hFE VCE=1V, IC=6A 50min IC=6A, IB=1.3A 0.35max VECO=10A 2.5max V IB 3 A VCE(sat) PC 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=12V, IE=–0.5A

ic SE 135

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

sfh601-5

Abstract: CNX83A datasheet ic mct2e h11av2 equivalent TIL111 4N25 4N26 4N27 4N28 4N35
Contextual Info: 1 of 2 Transistor Output WITH Base Lead, 6pin DIP Package Current CTR Isolation Part Transfer Test Voltage Collector BVCEO VCE SAT Test Max Number Ratio Conditions RMS Current Min Min Conditions VCE=10V (KV) (mA) (V) (V) (% ) VCE(SAT) ICEO (nA) 4N25 20 min

ztx605

Abstract: FCX605 FCX605TA SOT223
Contextual Info: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low

Contextual Info: KSA1242 PNP EPITAXIAL SILICON TRANSISTOR CAMERA FLASH APPLICATIONS MEDIUM POWER AMPLIFIER • hFE= 100-320 VCE = -2V, lc = -0.5V • hFE= 70(Min) (V ce = -2V, lc = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max) ABSOLUTE MAXIMUM RATINGS Rating Unit

Contextual Info: 2SC4683 SILICON NPN EPITAXIAL TYPE PCT PROCESS TENTATIVE data STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES Excellent h^E Lineanity : ^FE(l) = «00-3200 (VCE=1V, IC=0.5A) : hFE(2) = 500 (Typ.) (VCE=1V, IC=3A) Low Collector Saturation Voltage

12V dc 6A motor driver

Abstract: dc motor for 24v 2SA1567 24V "DC Motor" 24V to 12V REGULATOR IC dc chopper circuit 2SA156
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

12V dc 6A motor driver

Abstract: 2SA1567
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1567 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -50V(Min) ·DC Current Gain: hFE= 50(Min)@ (VCE= -1V,IC= -6A) ·Low Saturation Voltage: VCE(sat)= -0.35V(Max)@ (IC= -6A, IB -0.6A)

Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)

cb amplifier

Abstract: common emitter amplifier FMMT5179 MPS5179 DSA003697
Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C

2SC4658

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SC4658 HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS Unit in mm FEATURES: • Excellent hj-E linearity : hFE=100~320 at VCE=1V, IC=1A • Low Collector Saturation Voltage : vCE sat = 0 -*v (Max.) at Ic=3A, Ib =0.15A

lf817

Abstract: pnp 8 transistor array pnp array SLA8004 1/stv 9902
Contextual Info: Power Transistor Array SLA8004 Tj Tstg ICBO IEBO VCEO hFE VCE sat VFEC Ratings VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max Test Conditions Ratings VCB = –55V –100max VEB = –6V

cb amplifier

Abstract: FMMT5179 DSA003671
Contextual Info: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSUE 3 - JANUARY 1996 FEATURES * High fT=900MHz Min * Max capacitance=1pF * Low noise 4.5dB TYPICAL CHARACTERISTICS 200 1.0 VCE=1V VCE=1V 175°C VBE - Volts hFE -Gain 25°C -55°C 0.6 0.4 100°C

Contextual Info: Ordering number : ENA1120A 2SC5646A RF Transistor 4V, 30mA, fT=12.5GHz, NPN Single SSFP http://onsemi.com Features • • • • • • Low-noise : NF=1.5dB typ f=2GHz High cut-off frequency : fT=10GHz typ (VCE=1V) : fT=12.5GHz typ (VCE=3V) Low-voltage operation

Contextual Info: UTC 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION *Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES 1 *High DC Current Gain and Excellent hFE Linearity. *hFE 1 =140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A)

TRANSISTOR SMD 1a 9

Abstract: SDC09 smd transistor 142 SMD-16A
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

IC TB 1237 AN

Abstract: "marking nm" 2SC6024 CBC 337 cbc 547
Contextual Info: 2SC6024 Ordering number : ENN8290 NPN Epitaxial Planar Silicon Transistor 2SC6024 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.2dB typ f=2GHz . High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V).

SMD-16A

Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

KTC4377

Contextual Info: SEMICONDUCTOR KTC4377 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. A FEATURES High DC Current Gain and Excellent hFE Linearity G 600 VCE=1V, IC=0.5A J B E : hFE(1)=140 C H : hFE(2)=70(Min.), 140(Typ.) (VCE=1V, IC=2A).