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Catalog Datasheet	Type	Document Tags	PDF
marking g1s Abstract: 3SK238 Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C	OCR Scan	3SK238-------------Silicon 3SK238 VC52S marking g1s 3SK238	PDF
3SK290 Contextual Info: HITACHI 3SK290-Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier CMPAK-4 Features • Low noise figure. NF = 2.3 dB typ. at f = 900 MHz • High gain. PG = 19.3 dB typ. at f = 900 MHz 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C	OCR Scan	3SK290----------Silicon 3SK290 3SK290	PDF

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marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

OCR Scan

3SK238-------------Silicon 3SK238 VC52S marking g1s 3SK238

PDF

3SK290

Contextual Info: HITACHI 3SK290-Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier CMPAK-4 Features • Low noise figure. NF = 2.3 dB typ. at f = 900 MHz • High gain. PG = 19.3 dB typ. at f = 900 MHz 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C

OCR Scan

3SK290----------Silicon 3SK290 3SK290

PDF