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SMC Corporation of America


SMC Corporation of America LVC52-S19N HIGH PURITY CHEMICAL VALVE, AIR OPERATED, LVC SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	LVC52-S19N	Bulk		5 Weeks	1	1 $421.43 10 $391.93 100 $391.93 1000 $391.93 10000 $391.93	Get Quote

VC52S Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
marking g1s Abstract: 3SK238 Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C	OCR Scan	3SK238-------------Silicon 3SK238 VC52S marking g1s 3SK238	PDF
3SK290 Contextual Info: HITACHI 3SK290-Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier CMPAK-4 Features • Low noise figure. NF = 2.3 dB typ. at f = 900 MHz • High gain. PG = 19.3 dB typ. at f = 900 MHz 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C	OCR Scan	3SK290----------Silicon 3SK290 3SK290	PDF

Catalog Datasheet

Type

Document Tags

PDF

marking g1s

Abstract: 3SK238
Contextual Info: HITACHI 3SK238-Silicon N-Channel Dual Gate MOSFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent cross modulation characteristics • Capable of low voltage operation 4 1. 2. 3. 4. Source G atel Gate2 Drain Table 1 Absolute M aximum Ratings Ta = 25°C

OCR Scan

3SK238-------------Silicon 3SK238 VC52S marking g1s 3SK238

PDF

3SK290

Contextual Info: HITACHI 3SK290-Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier CMPAK-4 Features • Low noise figure. NF = 2.3 dB typ. at f = 900 MHz • High gain. PG = 19.3 dB typ. at f = 900 MHz 4 1. 2. 3. 4. Source Gate 1 Gate 2 Drain Table 1 Absolute Maximum Ratings Ta = 25°C