VC 125A Search Results

7066583

Abstract: Lea tv
Contextual Info: PLC-45 4 5 W 5 i n g l e Q u i p ut L E D P o w e r S u p p l y scries | F ? a 1 u re s : U ì v t ì ' S j A C inpul : F u i id ng* F j y sù -aiiid plaslieeass *i1h fe-ii -lai alaùt slyle cl I/O Hu 1-1n t m l i i i c u f l H i i m i n g ìH lvm flc usteM e ¿¡d 1 ij1 vc 1^je a id rjjrrem lévtìì

IR2E16

Abstract: LS125 16CIF truth table NOT gate 74 ls126 HC 125A
Contextual Info: LS125/125A - QUAD 3-STATE BUFFER LOW ENABLE LS126/126A - QUAD 3-STATE BUFFER (HIGH ENABLE) DESCRIPTION The T54LS/T74LS125/125A/126/126A are high speed QUAD 3-STATE BUFFERS WITH ACTIVE HIGH ENABLES fabricated in LOW POWER SCHOTTKY tecnology. B1 Plastic Package

Contextual Info: “BIG IDEAS IN BIG POWER " • PowerTecn 850 AM PER ES M T -5 00 0 MT - 5001 POWERBLOCK POWER SYSTEM MT-5000 MT-5001 60V 80V 60V 80V 10V 10V 250A 250A 125A 125A 350W 350W 200W 200W 0.5° C/W 0.5° C/W Operating Junction Temp. Range -65 to 200° C -65 to 200° C

LS126

Abstract: ls125
Contextual Info: a s LS125/125A - QUAD 3-STATE BUFFER LOW ENABLE LS126/126A - QUAD 3-STATE BUFFER (HIGH ENABLE) DESCRIPTION B1 Plastic Package The T54LS/T74LS125/125A/126/126A are high speed QUAD 3-STATE BUFFERS WITH ACTIVE HIGH ENABLES fabricated in LOW POWER SCHOTTKY tecnology.

74LSI25

Abstract: LS125 T74LS125
Contextual Info: S S-THOM.SON 07E G D — 7 ^ 2 3 7 D D l'm a n LOW POWER SCHOTTKY ô. T54LS125/126 T54LS125A/126A 3 T74LS125/126 T74LS125A/126A INTEGRATED CIRCUITS QUAD 3-STATE BUFFERS WITH ACTIVÉ HIGH ENABLES DESCRIPTION The T54LS/T74LS125/125A/126/126A are high speed QUAD 3-STATE BUFFERS WITH ACTIVE

74HC125A

Abstract: 74HC126A hc126a
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 54/74H C 125A M C 54/74H C 126A Advance Inform ation Quad 3-State Noninverting Buffers J SUFFIX CERAMIC CASE 632-08 High-Performance Silicon-Gate CMOS The MC54/74HC125A and M C54/74HC126A are identical in pinout to the

logic diagram for 4 bit magnitude comparator

Contextual Info: Philips Semiconductors Product specification 8-bit magnitude comparator 74LV688 FEATURES DESCRIPTION e Wide operating voltage: 1.0 to 5.5V The 74LV688 is a high-speed Si-gate CMOS device, pin compatible with the 74HC/HCT688 • Optimized for low voltage applications: 1.0V to 3.6V

ET Mini smcc v2

Abstract: sp8k10 AO4468 equivalent it851 hcl p38 CIRCUIT diagram SLG8XP5 CLEVO SD MOSFET DRIVE 4468 8 PIN SLG8XP c5855
Contextual Info: Preface Notebook Computer D900F Service Manual Preface I Preface Notice The company reserves the right to revise this publication or to change its contents without notice. Information contained herein is for reference only and does not constitute a commitment on the part of the manufacturer or any subsequent vendor. They assume no responsibility or liability for any errors or inaccuracies that may appear in this publication nor are

100-16L

Abstract: transistor smd TU 3
Contextual Info: 1.25A High Efficiency Switching Regulator D e sc r ip tio n The CS3972 is a 1.25A, 60V, current m ode, high efficiency, sw itching regulator circuit. It can be config­ u red in buck, boost, forw ard, iso­ lated a n d non-isolated topologies, using a single-ended switch.

Contextual Info: Philips Semiconductors Product specification Octal bus transceiver 3-State 74LV245 FEATURES DESCRIPTION • Wide operating voltage: 1.0 to 5.5 V The 74LV245 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT245. • Optimized for low voltage applications: 1.0 to 3.6 V

BU526

Contextual Info: BU526 CI BU526 NPN POWER TRANSISTOR Switching Mode Power Supply Applications DIM A B C D E F G H J K L M MIN MAX 39,37 22,22 8,50 6,35 1.09 0,96 1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15 11,15 12,25 26,67 3,84 4,19 - PIN CONFIGURATION 1. B A SE 2. EM ITTER

micronote 103

Abstract: PLAD15KP PLAD30KP 1N6461 30KPxx 1.5ke series RTCA DO-160 microsemi TVS ARINC 582 RT130KP
Contextual Info: APPLICATION NOTE MicroNote 132 AIRCRAFT LIGHTNING PROTECTION A Shortcut to Selecting Transient Voltage Suppressors for RTCA/DO-160E Threats Using Microsemi's New DIRECTselect™ Method by Mel Clark Table of Contents Background 3 Abnormal Voltage Characteristics

SN7441N

Abstract: SN7401 SN530 SN7311 SN510A SN51UB SN15851 advantages of master slave jk flip flop SN-7441N SN5301
Contextual Info: Sem iconductors and Comjpdiients Data Book 2 Digital Integrated C ircuits Copyright 1966 by Texas Instruments Limited. 'All Rights Reserved. Printed in the United Kingdom. This book, or parts thereof, may not be reproduced in any form without permission of the publisher, Texas Instruments

Contextual Info: 1.25A High Efficiency Switching Regulator Features Description The CS3972 is a 1.25A, 60V, current mode, high efficiency, switching regulator circuit. It can be config­ ured in buck, boost, forward, iso­ lated and non-isolated topologies, using a single-ended switch.

74HC125A

Abstract: TC74HC125AFN
Contextual Info: TOSHIBA TC 74H C 125A P /A F/A FN ,126A P /A F TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC125AP, TC74HC125AF, TC74HC125AFN TC74HC126AP, TC74HC126AF TC74HC125AP/AF/AFN TC74HC126AP/AF QUAD BUS BUFFER QUAD BUS BUFFER Note The JEDEC SOP (FN) is not available in

Contextual Info: Philips Semiconductors Product specification Dual JK flip-flop with set and reset; positive-edge trigger 74LV109 FEATURES DESCRIPTION • Optimized for low voltage applications: 1.0 to 3.6 V The 74LV109 is a low-voltage Si-gate CMOS device that is pin and

Contextual Info: Philips Semiconductors Product specification Quad bilateral switches 74LV4316 FEATURES DESCRIPTION • Optimized for Low Voltage applications: 1 .OV to 6.0V The 74LV4316 is a low-voltage CMOS device that is pin and function compatible with 74HC/HCT4316. • Accepts TTL input levels between V cc = 2.7V and V cc = 3.6V

CD40668

Abstract: CD4016B CD4066BMS cd40668ms C04049
Contextual Info: iSi HARIRIS CD4066BMS S E M I C O N D U C T O R CMOS Quad Bilateral Switch December 1992 Features Description • For Transm ission or M ultiplexing of Analog or Digital Signals CD40668MS is a quad bilateral switch intended for the transm ission or m ultiplexing of analog or digital signals. It is

ballast electronic hps

Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS

TC74HC125AFN

Contextual Info: TOSHIBA TC 74H C 125A P /A F/A FN ,126A P /A F TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC125AP, TC74HC125AF, TC74HC125AFN TC74HC126AP, TC74HC126AF TC74HC125AP/AF/AFN TC74HC126AP/AF QUAD BUS BUFFER QUAD BUS BUFFER Note The JEDEC SOP (FN) is not available in

vq 123

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Information Insulated Gate Bipolar Transistor MGW 12N120E N-Channel Enhancement-Mode Silicon Gate This Insulated Sate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high

Triac/TRIAC TAG 92

Abstract: TRIAC TAG 425 600 TRIAC TAG 280 600 tag 453 triac triac tag 425 400 TRIAC TAG 92 transistor ac51 EN60669-2-1 TAG 453 280 800 TRIAC TAG 90
Contextual Info: SIMM Series Input Modules * 6.2 mm wide and 65 mm deep * DIN Rail mounted * LED input status indicator * Bridges enable quick linking of common voltage * Identification zone on front face * IP20 Part numbers 84145061 84145062 84145064 84145066 84145071 24Vac/dc

C3972

Contextual Info: 1.25A High Efficiency Switching Regulator D escription T he CS-3972 is a 1.25A, 60V, c ur­ rent mode, high efficiency, sw it ch ­ ing regulator circuit. It can be c on ­ figured in buck, boost, forward, isolated and non-isolated to polo­ gies, using a single-ended switch.

transistor motorola 236

Abstract: motorola transistor m 237
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M GY25N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 25 A @ 90 C 38 A @ 25°C 1200 VOLTS