VBE 6 V Search Results

CSA 70

Contextual Info: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1

10-32UNF

Abstract: 20-20NO1
Contextual Info: VBE 20 IdAV = 20 A VRRM = 2000 V trr = 70 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED 1 VRSM V VRRM V Type 2000 2000 VBE 20-20NO1 5 1 10 6 5 10 6 Symbol Conditions Maximum Ratings IdAV TC = 65°C, module 20 A IFSM TVJ = 45°C;

Contextual Info: VBE 20 IdAV = 20 A VRRM = 2000 V trr = 70 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED 1 VRSM V VRRM V Type 2000 2000 VBE 20-20NO1 5 1 10 6 5 10 6 Symbol Conditions Maximum Ratings IdAV TC = 65°C, module 20 A IFSM TVJ = 45°C;

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

20-20N01

Abstract: VUE30-20N01
Contextual Info: nixYS VBE 2 0 /V U E 3 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM = 2000 V ldAV 1~ = 2 0 A ldAv(3~) = 30 A = 70 ns with Fast Recovery Epitaxial Diodes (FRED) t. 5 vRSIfl vRRM V V 2000 2000 6 10 1 Type Single Phase Type Three Phase

Contextual Info: SIE D • fil3bh71 DDD373L. Maximum Ratings Conditions VcEVsus |c = Ie = V ebo lc ICM If = - lc > CM VCBO lc 1 A, Vbe = - 2 V ! II LU CQ > VcEV Units 600 V 600 V 600 V 7 V 100 A tp = 1 ms 200 A D. C. 100 A 6 A Tease = 25 °C 620 W Ib Ptot Values D. C. = Tvi

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »

2-21F1A

Contextual Info: Rziz Ta=25"C EIAJ 37 i% : hFE(lja%i R : 55-110, 0 : 80-160 25 2-21F1A -16 "0 -4 -8 3lJ5J$J.X$ -12 hm - Ic -I 6 -20 IC - VBE -0.4 - 0.8 -i - ;( . I. $ 9 VCE(sat) -1.2 - 1.6 - IC 500 300 -1 !z Jz 100 # @ ?s #nJ -0.5 / 50 30 p, t( 10 5 P, Jb 1 3 -,0.05 - 0.03

FZT951

Abstract: FZT953 fzt853 FZT851 DSA003718
Contextual Info: FZT951 FZT953 SOT223 PNP SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS ISSUE 3 - APRIL 2000 FEATURES * 5 Amps continuous current , up to 15 Amps peak current * Very low saturation voltages * Excellent gain characteristics specified up to 10 Amps

Contextual Info: BUX33A BUX33A BUX33B MECHANICAL DATA Dimensions in mm inches 4 0 .0 1 (1 .5 7 5 ) M a x . HIGH VOLTAGE HIGH SPEED HIGH POWER TRANSISTORS 2 6 .6 7 (1 .0 5 0 ) M a x . 4 .4 7 (0 .1 7 6 ) R a d . 2 P ls . DESCRIPTION 2 2 .2 3 (0 .8 7 5 ) M a x . 1 1 .4 3 (0 .4 5 0 )

3V to 350V dc dc converter

Abstract: 3V to 300V dc dc converter NPN Transistor 10A 400V BUX17 NPN Transistor 10A 400V to 92 BUX17B 300V transistor npn 2a BUX17A BUX17C DC DC converter 5v to 400V
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX17/A/B/C DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 150V(Min)- BUX17 = 250V(Min)- BUX17A = 300V(Min)- BUX17B = 350V(Min)- BUX17C ·High Switching Speed

2N5153

Abstract: 2N5151 2N5152 2N5154
Contextual Info: 2N5152 2N5154 MECHANICAL DATA Dimensions in mm inches HIGH SPEED MEDIUM VOLTAGE SWITCHES 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 5 .0 8 (0 .2 0 0 ) ty p . DESCRIPTION 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 3 2 .5 4 (0 .1 0 0 )

pnp 10A

Abstract: 5A25T SLA4313
Contextual Info: SLA4313 NPN Silicon Epitaxial Planar PNP □Absolute maximum ratings Parameter （Ta＝25℃） Symbol NPN PNP Unit Collector-Base Voltage VCBO 35 −35 V Collector-Emitter Voltage VCEO 35 −35 V Emitter-Base Voltage VEBO 6 −6 V Collector Current IC 5 −5

SBP13

Abstract: SBP13009 SBP-13
Contextual Info: SBP13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

BUX16

Abstract: voltage regulators 300v dc BUX16/A BUX16A BUX16B BUX16C
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUX16/A/B/C DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min)- BUX16 = 250V(Min)- BUX16A = 300V(Min)- BUX16B = 350V(Min)- BUX16C ·High Power Dissipation

Contextual Info: BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 Series TO-220 PACKAGE TOP VIEW 90 W at 25°C Case Temperature 15 A Continuous Collector Current 20 A Peak Collector Current B 1 C 2 Customer-Specified Selections Available

Contextual Info: BD743, BD743A, BD743B, BD743C NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD744 Series TO-220 PACKAGE TOP VIEW 90 W at 25°C Case Temperature 15 A Continuous Collector Current B 1 20 A Peak Collector Current C 2 Customer-Specified Selections Available

Contextual Info: BC846AW ~ BC850CW NPN GENERAL PURPOSE TRANSISTORS POWER 30/45/65 Volts VOLTAGE 150 mWatts SOT-323 Unit：inch mm 0.004(0.10)MIN. • General purpose amplifier applications • NPN epitaxial silicon, planar design • Collector current IC = 100mA • Lead free in comply with EU RoHS 2002/95/EC directives.

sbw13009

Contextual Info: SBW13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

SBP13

Abstract: SBP13009A SBP-13
Contextual Info: SemiWell Semiconductor SBP13009A High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 60ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

SBP13009

Contextual Info: SBP13009 SemiWell Semiconductor High Voltage Fast-Switching NPN Power Transistor Features Symbol ○ 1.Base 2.Collector ○ c - Very High Switching Speed Typical 40ns@8.0A - Minimum Lot-to-Lot hFE Variation - Low VCE(sat) (Typical 320mV@8.0A/1.6A) - Wide Reverse Bias S.O.A

2n6278

Abstract: 2N6274 2N6281 2n6276 IC 4071 IC617 2N6261 2N6279
Contextual Info: söE » TELEDYNE COMPONENTS • T^ss-tf fi^iTbag aoübsa^ b ■ NPN POWER TRANSISTORS 2N6274 thru 2N6281 50 AMP SWITCHING GEOMETRY 512 1250 W. Continuous Power 1VCEO sus to 150 V. TO -63 TO-3 (.060 Lead) t 460 «6 J i MAXIMUM RATINGS PARAMETER Coflector-Emitter Vottage

2N3904

Abstract: NPN 2n3904 2N2222 npn 2n2222 2N2222A 2SD1803 AIC1638 AIC1639 Si2302DS AN00-SR05EN
Contextual Info: AN00-SR05EN Optimized external driver for AIC1639 Stanley Chen Introduction AIC1639 is a member of AIC1638 PFM （ Pulse Frequency Modulation ） controller IC family, for step-up DC/DC converter featuring high efficiency and low ripple voltage, which is exactly the same as

PA341DW

Abstract: PA341DF PA341 PA341CE
Contextual Info: PA341 PA341 PA341 High Voltage Power Operational Amplifier FEATURES ♦ RoHS COMPLIANT ♦ MONOLITHIC MOS TECHNOLOGY ♦ LOW COST ♦ HIGH VOLTAGE OPERATION–350V ♦ LOW QUIESCENT CURRENT TYP.–2.2mA ♦ NO SECOND BREAKDOWN ♦ HIGH OUTPUT CURRENT–120mA PEAK