VBE 6 V Search Results

CSA 70

Contextual Info: VBE 20 / VUE 30 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM IdAV 1~ IdAV (3~) trr with Fast Recovery Epitaxial Diodes (FRED) VRSM V VRRM V Type Single Phase Type Three Phase 2000 2000 VBE 20-20NO1 VUE30-20NO1 5 6 10 1 5 6 8 10 1

10-32UNF

Abstract: 20-20NO1
Contextual Info: VBE 20 IdAV = 20 A VRRM = 2000 V trr = 70 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED 1 VRSM V VRRM V Type 2000 2000 VBE 20-20NO1 5 1 10 6 5 10 6 Symbol Conditions Maximum Ratings IdAV TC = 65°C, module 20 A IFSM TVJ = 45°C;

pwm INVERTER

Abstract: fast recovery epitaxial diode FRED module bridge
Contextual Info: VBE 20 IdAV = 20 A VRRM = 2000 V trr = 70 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED 1 VRSM V VRRM V Type 2000 2000 VBE 20-20NO1 5 1 10 6 5 10 6 Symbol Conditions Maximum Ratings IdAV TC = 85°C, module 20 A IFSM TVJ = 45°C;

Contextual Info: VBE 20 IdAV = 20 A VRRM = 2000 V trr = 70 ns Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes FRED 1 VRSM V VRRM V Type 2000 2000 VBE 20-20NO1 5 1 10 6 5 10 6 Symbol Conditions Maximum Ratings IdAV TC = 65°C, module 20 A IFSM TVJ = 45°C;

10J2

Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
Contextual Info: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A

4010 IC

Abstract: 2N6062 2N5927 ic 4010 2N4866 50110 TO-114 2N1936 2N1937 2N3266
Contextual Info: NEU ENGLAND SEMICONDU CTOR b S b M ' m D000GS7 m 3 SRE D «NES Ic max — 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fT = 0.6 to 3 0 MHz NPN TÜ-63 Case 807 V ce (sat ) @ IC/lB ( V @ A/A) VBE (SAT) @ IC/lB (V @A/A) VBE @ IC/VCE (V @ A/V) pd @ TC = 100 °C (Watts)

TH3L10

Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795
Contextual Info: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)

STA406A

Contextual Info: STA406A NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions D Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO VEBO 6 V VCEO 50 IC 6 A hFE 2000 1 A VCE(sat) 1.5 V VBE(sat)

STA400

Abstract: STA406A
Contextual Info: STA406A NPN Darlington With built-in avalanche diode Absolute maximum ratings External dimensions D Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 60±10 V ICBO VCEO 60±10 V IEBO VEBO 6 V VCEO 50 IC 6 A hFE 2000 1 A VCE(sat) 1.5 V VBE(sat)

vqe 24 d

Contextual Info: euoec F B S M 1 5 G D 6 0 DL IGBT Power Module Preliminary data • 600V NPT Technology • Solderable Power module • 3-phase full-bridge • Including fast free-wheel diodes • Package with insulated metal base plate Type VbE h Package Ordering Code BSM 1 5 G D 6 0 DL

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

VQE 23 E

Abstract: VQE 23 F
Contextual Info: euoec BSM 200 GA 170 DN2 F IGBT Power Module • Single switch • Including fast free-wheeling diodes • Package with insulated metal base plate • on,min = 6-8 Ohm Type VbE Package Ordering Code BSM 200 GA 170 DN2 1700V 290A SINGLE SWITCH 1 C67070-A2705-A67

Powertech

Abstract: PT-9503
Contextual Info: “BIG IDEAS IN BIG POWER '' • PowerTech 400 AM PER ES PT-95Q3 SILICON INIPINI TRANSISTOR FEATURES: V @ 200 A hpE 1.5 V @200 A t f . v C E sat . VBe - 5 min @ 400A 3 |j sec PD ■■ 625 Watts E S/b 6 Joules SAFE OPERATING AREA

2SD2045

Contextual Info: 2SD2045 Silicon NPN Triple Diffused Planar Transistor VCB=120V 10max µA VCEO 120 V IEBO VEB=6V 10max mA 6 V V BR CEO IC=10mA 120min 6(Pulse10) A hFE VCE=2V, IC=3A 2000min V IB 1 A VCE(sat) IC=3A, IB=3mA 1.5max PC 50(Tc=25°C) W VBE(sat) IC=3A, IB=3mA 2.0max

2SD2014

Abstract: 2SB1257 FM20
Contextual Info: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max

20-20N01

Abstract: VUE30-20N01
Contextual Info: nixYS VBE 2 0 /V U E 3 Advanced Technical Information Single / Three Phase Rectifier Bridge VRRM = 2000 V ldAV 1~ = 2 0 A ldAv(3~) = 30 A = 70 ns with Fast Recovery Epitaxial Diodes (FRED) t. 5 vRSIfl vRRM V V 2000 2000 6 10 1 Type Single Phase Type Three Phase

2SB1257

Abstract: 2SD2014 FM20 nk co DSA0016505
Contextual Info: 2 k Ω (6 5 0Ω) E 2SB1257 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2014) A –10max µA –60min V hFE VCE=–4V, IC=–3A 2000min IB –1 A VCE(sat) IC=–3A, IB=–6mA –1.5max PC 25(Tc=25°C) W VBE(sat) IC=–3A, IB=–6mA –2max

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

2sd2083

Abstract: 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2sd2083

Abstract: transistor 2sd2083 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2SC4020

Abstract: 2SC4020 equivalent
Contextual Info: 2SC4020 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor VEBO 7 V V(BR)CEO 3(Pulse 6) A hFE IC µA VEB=7V 100max µA IC=10mA 800min V VCE=4V, IC=0.7A 10 to 30 IB 1.5 A VCE(sat) IC=0.7A, IB=0.14A 0.5max PC 50(Tc=25°C) W VBE(sat)

2SD2016

Abstract: FM20
Contextual Info: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)

Contextual Info: SIE D • fil3bh71 DDD373L. Maximum Ratings Conditions VcEVsus |c = Ie = V ebo lc ICM If = - lc > CM VCBO lc 1 A, Vbe = - 2 V ! II LU CQ > VcEV Units 600 V 600 V 600 V 7 V 100 A tp = 1 ms 200 A D. C. 100 A 6 A Tease = 25 °C 620 W Ib Ptot Values D. C. = Tvi

PN4250

Abstract: 2N4248 2N4288 2N4249 2N4250A 2N4250
Contextual Info: This Material PNP Transistors Copyrighted 3> —3 LOW LEVEL AMPS C«a Style Vc b o V Min v CEO (V) Min vebo 2N2604 TO-46 60 45 6 By Type No. (V) Min •CBO VCB (nA) (V) Max 10 *>FE 'C » VCE Min Max (mA| (V) 350 45 10 VCE(SAT) VBE(SAT) (V) 8. (V) »