VARACTOR ITT Search Results

high capacitance varactor 1nF AM

Abstract: varactor 1nF AM LTC1340 LTC1429
Contextual Info: u f m LTC 1340 TECHNOLOGY Low Noise, Voltage-Boosted V aractor Driver KOTUfKS DCSCRIPTIOfl • Generates 5V Varactor Drive from a 3V Supply The LTC 1340 is avaractor diode driver designed to generate 5V varactor drive from a single 3V or higher voltage supply.

MA87729-M01

Contextual Info: an A M P com pany Varactor Controlled Oscillator Transceiver 24.150 GHz MA87729-M01 V3.00 Features -1 .0 5 0 M AX. 26.67 ^ BT VARACTOR ~ BIAS • In exp en siv e K -b an d T ia n s c e iv e r +V B IA S ^ r-o* 78) • Can b e EM M od u lated 0.810 MAX.

Contextual Info: Tuning Varactor SELECTION GUIDE. 5-3 MODEL NUMBER PAGE MA45228 . MA45234 MA45235 MA45236 MA45237 MA45241 . ittio li • MA45249 MA45250 MA45252 MA45253 MA45254 MA45255 MA45257 MA45258 MA45259 MA45260 MA45261 MA45262 MA45263 MA45264 MA45265

Contextual Info: Ordering num ber : ENN6966 Silicon Diffused-Junction Type EC2C01C iSMlYOl VCXO & VHF Band VCO Applications Varactor Diode Features Package Dimensions • High capacitance ratio. C R C l ,( V / C4.0V)=5.0typ unit : mm • Ultrasmall-si/ed packagc(i008), slim package

C1648

Abstract: 0.1pf varactor loral pin diodes tank oscillator circuit 5v MC1648
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low-Power Voltage Controlled Oscillator MC12148 The MC12148 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator

HMC131

Contextual Info: HITTITE MICROWAVE CORPORATION GaAs MMIC Buffered C-Band VCO HMC131 JUNE 1996 Features 1 GHz TUNING RANGE SINGLE +5V SUPPLY OPERATION NO EXTERNAL VARACTOR REQUIRED General Description The HMC131 chip is a C-Band VCO with on-chip buffering for improved load iso­

ma87811

Contextual Info: an A M P com pany Varactor Controlled Oscillator 21.20 - 23.60 GHz MA87811 V3.00 Features • • • • • Low Cost Excellent Tuning Linearity ±0.03% Frequency vs. Temperature Stability Small and Lightweight Modulation and External AFC Control Can be Commonly Applied to Electronic Tuning Bias

1N5718

Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf > 100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA < 1 .0M* Replaces MV830-MV840 DO-7 G lass CV830CV840 X C V1006-16CV1106-16 X X CV1620CV1650 X X X X

CV1664

Abstract: DO-14 diode VA51 VA521
Contextual Info: VARACTOR SELECTO R GUIDE Series Capacitance 1-IOOpf >100pf Max Working Voltage Q 7-50 50-150 >150 10-50 50-100 >100 Leakage Current low Cost Comments <10nA <1.0M* Replaces M V830-M V840 DO-7 G lass CV830CV840 X CV1006-16CV1106-16 X X CV1620CV1650 X X X X X

vto8200

Abstract: hp 8200 diode VTO-8090
Contextual Info: What H E W L E T T * mLliM PA C K A R D Varactor-Tuned O scillators Technical Data VTO-8OOO Series Features • 600 MHz to 10.5 GHz Coverage • Fast Tuning • +7 t o +13 dBm Output Power • ± 1.5 dB Output Flatness • Hermetic Thin-film Construction Description

WR90

Abstract: transistor A 935 varactor diode 24V CL8300 Gunn Oscillator WR90 cl8630 radar gunn diode gunn effect 935 schottky diode Gunn Diode
Contextual Info: Microwave solid state tuning varactor diodes book 1 part 8 a c 11 h Ty p e No. Description q o £ M in. Capacitance R atio CT 0V C T 60V Capacitance at V r 4 V m in . m ax. <pF BXY53 BXY54 BXY6S Silico n planar epitaxial tuning devices SOD-31 N 4 .0 6 .5

magnum microwave

Contextual Info: 4ÔE T> fi AG NU n MICROWAVE CORP S75273D 0 0 00 1 5 3 b • HNC HV87T-1 VCO 2 .0 VOLTAGE CONTROLLED OSCILLATOR HYPERA3RJPT VARACTOR INTEGRAL BUFFER AMPLIFIER to 4 .0 ELECTRICAL S P E C IFIC A TIO N S :^ • ' +20- Frequency 2.0 to 4.0 GHz Power Output at 25*C 50 ohm load

LTC1340

Abstract: LTC1429
Contextual Info: u i LTC134Q m TECHNOLOGY Low N oise, V o lta g e -B o o ste d V a ra c to r Driver F€flTUR€S D€SCRIPTIOf • G ene rate s 5V Varactor Drive from a 3 V Supply ■ Wide Supply Voltage Range: 2.7V to 6V ■ Req uires O n ly Three Extern al Com ponents

MA87

Contextual Info: an A M P com pany Varactor Controlled Oscillator 21.15 - 23.63 GHZ MA87937 V3.00 Features • B ro ad b a n d E le ctro n ic T u ning A lbw s fb r C e n te r F ie q u e n c y Setldng to D o n e E lectro n ically , A lleviating th e N eed & r 'X n Site"M e c h a n ic a lA d jistm e n ts .

Contextual Info: GEC PLESSEY SEMICONDS 43E D • 3 7 b ö S S S GGlS'ihl H B P L S B GEC P L E S S E Y I S E M I C O N D U C T O R ~ S ~ ~ f. 3028-1.0 SP1648 ECL OSCILLATOR The SP1648 is an em itter-coupled oscillator, constructed on a single m onolithic silicon chip. O utput levels are

Contextual Info: Satellite Systems Part numbers link to product information Receiver itter Diplexer Switch AGC Amp B LNA BPF L. O. G BPF AGC Amp LNA Demodulator Block Converter Demodulator IF Amp Block Converter D Tunable PLL D L. O. Tunable PLL SMS3926 Series SMS7621-040LF

MC1648 equivalent

Abstract: AN-532a an532a motorola application notes MC1648 MC1648 internal schematic tag c2 680 800 "Varactor Diode" symbol of varactor diode and equivalent circuit MC1600
Contextual Info: L O G IC D I A G R A M S continued 2 OSCILLATOR I—MULTIVIBRATOR M C I 6 48 E m itte r C o u p le d O s c illa to r M C 1658 V o Itage-Co litr o I led M u ltiv ib ra to r C xi CX2 V c c = Pins 1, 14 V EE = Pins 7, 8 V CC1 - 1 V CC2 " a ' n 5 V ee = |J'n 6

1200 ohm RESISTOR

Abstract: CT075 1648l C1648
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA V oltage Controlled O scillator M C1648 Consider MC12148 for New Designs The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance Q|_ a 100 at Frequency of Operation.

Contextual Info: S i GEC PLESSEY S I M I O IS I l ( T O ADVANCE INFORMATION U S D.S. 3514 2.3 SP5058 2.6GHz 3-WIRE BUS SYNTHESISER (Supersedes December 1992 Edition DS3514 1.2) The SP5058 is a single chip frequency synthesiser designed fortuning systems up to 2.6GHz requiring high loop

MC 151 transistor

Abstract: varactor diode AM
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The MC12149 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

transistor qz

Abstract: construction of varactor diode
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low Power Voltage Controlled Oscillator Buffer The M C 12147 is intended for applications requiring high frequency signal generation up to 1300MHz. An external tank circuit is used to determine the desired frequency of operation. The VCO is realized using

LA1132

Abstract: varactor diode time switch varator diode varactor diode IF AMP RADIO la1130 varactor diode AM pin diode cross reference LA1135 LA1150 rf fet cross reference
Contextual Info: SA N Y O S E M I C O N D U C T O R LA 11 3 0 CORP 7t. ” 0001Ô35 1 DE ¿>,r CIRCUIT DRAWING NO.SP01 monolithic linear 1C AM TUNER SYSTEM FOR CAR RADIO Functions • RF amp. ■ D etector ■ ■ M ixer Norm al A G C " ■ Features ■ Single end packaging makes space useful.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 1648 V oltage C ontrolled O scillato r Consider MC12148 for New Designs The MC1648 requires an external parallel tank circuit consisting of the inductor L and capacitor (C). For Maximum Performance Q l £ 100 at

varactor diode

Abstract: varactor diode AM FET differential amplifier circuit Am tuning DIODE LA1132 pin diode cross reference varactor diode time switch LA1150
Contextual Info: SA N Y O S E M I C O N D U C T O R LA 11 3 0 CORP 7t. ” 0001Ô35 1 DE ¿>,r CIRCUIT DRAWING NO.SP01 monolithic linear 1C AM TUNER SYSTEM FOR CAR RADIO Functions • RF amp. ■ D etector ■ ■ M ixer Norm al A G C " ■ Features ■ Single end packaging makes space useful.