VARACTOR FLIP CHIP Search Results

varactor diode parameter

Abstract: ODS-1203 MA46H120
Contextual Info: GaAs Constant Gamma Flip-Chip Varactor Diode MA46H120 MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection

Contextual Info: RoHs Compliant GaAs Flip-Chip Multiplier Varactor Diode MA46H146 V3 Features • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration Description M/A-COM’s MA46H146 is a gallium arsenide flip

Contextual Info: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V3 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration

Contextual Info: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode V2 Absolute Maximum Ratings 1,2 Features Usable Past 70GHz Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection Surface Mount Configuration

Contextual Info: MA46H120 Series M/A-COM Products GaAs Constant Gamma Flip-Chip Varactor Diode Rev. V1 Features • Constant Gamma for Linear Tuning · Low Parasitic Capacitance · High Q · Silicon Nitride Passivation · Polyimide Scratch Protection · Surface Mount Configuration

MA46H120

Abstract: varactor diode GaAs varactor diode macom Polyimide
Contextual Info: MA46H120 Series GaAs Constant Gamma Flip-Chip Varactor Diode Features • Constant Gamma for Linear Tuning • Low Parasitic Capacitance • High Q • Silicon Nitride Passivation • Polyimide Scratch Protection • Surface Mount Configuration Rev. V3 Absolute Maximum Ratings 1,2

varactor flip chip

Abstract: MA46H146
Contextual Info: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Features n n n n n V 2.00 Chip Layout Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration Front View Circuit Side

MA46H120

Abstract: gaas varactor diodes varactor flip chip varactor diode "Varactor Diode"
Contextual Info: MA46H120 Series GaAs Constant Gamma Flip-Chip Varactor Diode Rev. V2 Features • Constant Gamma for Linear Tuning · Low Parasitic Capacitance · High Q · Silicon Nitride Passivation · Polyimide Scratch Protection · Surface Mount Configuration Absolute Maximum Ratings 1,2

GaAs varactor diode

Abstract: ODS-1203 varactor diode
Contextual Info: MA46H120 M/A-COM AlftCGM GaAs Constant Gamma Flip Chip Varactor Diode m r f& Features • • • • • • Microwave Products Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection

Contextual Info: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode M/A-COM Products Rev. V4 Features • • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration RoHS* Compliant

MA46H146

Abstract: varactor flip chip
Contextual Info: MA46H146 GaAs Flip-Chip Multiplier Varactor Diode Rev. V4 Features • • • • • • Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration RoHS* Compliant Absolute Maximum Ratings1 @ TA=+25 °C

mavr

Contextual Info: MAVR-000120-1411 Solderable GaAs Constant Gamma Flip-Chip Varactor Diode Absolute Maximum Ratings 1,2 Features •         V1 Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation

varactor flip chip

Abstract: ma46h120 gold embrittlement ODS-1203
Contextual Info: Silicon Bipolar XXXXXXX Headline Part Number MA46H120 GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • Chip Layout TOP VIEW Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection

A46H

Contextual Info: MA46H120 M/A-COM GaAs Constant Gamma FlipChip Varactor Diode Features • • • • • • A ßQ ^ A Miyûwavtt Hrortiirts Chip Layout Constant Gamma for Linear Tuning Low Parasitic Capacitance High Q Silicon Nitride Passivation Polyimide Scratch Protection

varactor

Abstract: varactor flip chip GMV7811-000 GMV7821 GMV7811 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000
Contextual Info: GaAs Hyperabrupt Junction Varactor Diodes GMV7811, GMV7821 GMV9801, GMV9821, GMV9822 Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon

430 varactor

Abstract: gaas varactor diodes GMV7811 GMV7811-000 GMV7821 GMV7821-000 GMV9801 GMV9801-000 GMV9821 GMV9821-000
Contextual Info: GaAs Hyperabrupt Junction Varactor Diodes GMV7811, GMV7821 GMV9801, GMV9821, GMV9822 Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in Comparison to Equivalent Silicon

GMV9823-000

Contextual Info: GaAs Hyperabrupt Junction Varactor Diodes EBAlpha GMV7811-GMV7815, GMV7821-GMV7825 GMV9801-GMV9806, GMV9821-GMV9826 Features • Constant Gamma of 1.0 and 1.25 ■ Highly Linear Frequency Tuning ■ Constant Modulation Sensitivity ■ Lower Series Resistance and Higher Q in

Contextual Info: O -Sì fe ^ co < O TO A m p lifie rs Frequency GHz Description Gain (dB) Min. Noise Figure (dB) Max. Power P1 dB (dBm) Typ. 19 2.9 6 Bias Output IP3 Voltage VD (dBm) Typ. (V) Package Type Part Number Low Noise Amplifiers 3.2-3.8 Switchable Gain LNA 2 S o

varactor flip chip

Abstract: CMOS Stacked RF INtermétal
Contextual Info: ▼ The Fujitsu Analog and RF CMOS Technology Description Building on Fujitsu’s expertise in leading-edge CMOS processes and analog design capabilities, the company’s RF CMOS technologies are optimized for wireless networks, cellular communication, WiMAX, digital multi-media

Contextual Info: Microwave ICs and Discrete Semiconductors CO -92 42 •5 ° .P T3 c l .O Q •£5 2a» § 8 - CO -o e to 3 y ? 2 .8 I ? C to Q> </> I -S •5 £ 5 § ° !2 Q Microwave ICs and Discrete Semiconductors . . .38 Chip, Chip on Board, and Hermetic Packaged S w itc h e s .39

Diodes

Abstract: RF Diode Design Guide
Contextual Info: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,

80500 TRANSISTOR

Abstract: Vo 80500 TRANSISTOR HE 80500 HE 80500 TRANSISTOR CT 80500 80500+TRANSISTOR GR-900 double slug tuner varactor diode q factor measurement Silicon Power Cube
Contextual Info: Application Note 80500: Tuning Diodes L introduction In recent years continuous development of tuning varactors - voltage controlled capacitors - together with an increased commercial and military use has led to sub­ stantial improvement in Q, reproducibility, and reliability.

Contextual Info: CATV / Satcom Solutions June 2012 Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog semiconductors. Leveraging core technologies, Skyworks offers high performance analog products supporting automotive, broadband, cellular infrastructure, energy management, industrial, medical, military, wireless

SC9100-007

Abstract: GMV9823-000 ATN3584-02 DMK2308 AA038P5-00
Contextual Info: Millimeterwave 1C and Discrete Semiconductor Products Selection Guide EBAlpha Low Noise Am plifiers Die Size mm Noise Figure (dB) Gain (dB) Pi dB (dBm) Bias (V) Ids (mA) Part Number Page Number 20-24 1.25X2.35 2.5 22.0 8.0 +4.5 (Self) 24 AA022N1-00 1-2 24-30