VA10 DATASHEET Search Results

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM LOW VOLTAGE READ OPERATION: 2.7V to 3.6V FAST READ ACCESS TIME: – 90ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V PIN COMPATIBLE with M27C512 LOW POWER CONSUMPTION: – 15µA max Standby Current

Contextual Info: 52E D H = 7 *7fn • 7=^237 S C S -1 H O M S O N L' Iiu r a m « D037Sbb OTT ■ SGTH s fi ^ hohson M 27C512 CMOS 512K 64K x 8 UV EPROM and OTP ROM ■ VERY FAST ACCESS TIME: 80ns ■ COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION:

Contextual Info: w# SGS-THOMSON k7#1 IMlMilLIOTiMIKgS M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST ACCESS TIME: - 90ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ LOW POWER CONSUMPTION: - Active Current 15mA

AI00738B

Contextual Info: M27W512 512 Kbit 64Kb x 8 Low Voltage OTP EPROM • LOW VOLTAGE READ OPERATION: 2.7V to 3.6V ■ FAST READ ACCESS TIME: - 90ns at Vcc = 3.0V to 3.6V - 100ns at Vcc = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: - 15(xA max Standby Current

Contextual Info: £ = 7 ^ 7 / S G S -T H O M S O N OMD MIlLi©iiM RflD©i M27C512 CMOS 512K 64K x 8) UV EPROM and OTP ROM • VERY FAST ACCESS Tl ME: 60ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE - LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

m27c512 ic pin diagram function

Abstract: ST m27c512
Contextual Info: SGS-THOMSON D M & iM M 0 g§ M27C512 CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns * COMPATIBLE WITH HIGH SPEED MICRO­ PROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|xA

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32 DSA009463 ST m27c512 AN620 datasheet
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIMES of AROUND 6sec.

m27c512 ic pin diagram function

Abstract: 27C512 SGS-THOMSON
Contextual Info: rZ J SCS-THOMSON M27C512 M g^(sm[E(gTIOMO § CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 60ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|iA

SGS M27C512

Abstract: ah rzj M27C512 PDIP28 PLCC32
Contextual Info: £ = 7 S G S -T H O M S O N n m a iin jg iB ïïit a g in iB g M 2 7 C 5 1 2 CMOS 512K 64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS Tl ME: 60ns ■ COMPATIBLE with HIGH SPEED MICROPRO­ CESSORS, ZERO WAIT STATE - LOW POWER "CMOS" CONSUMPTION: - Active Current 30mA

SGS M27C512

Abstract: EPROM M27C512 M27C512 SGS-THOMSON M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP ROM VERY FAST ACCESS TIME: 60ns COMPATIBLE with HIGH SPEED MICROPROCESSORS, ZERO WAIT STATE LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27C512

Abstract: PDIP28 PLCC32 m27c512 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

m27c512 PLCC32

Abstract: M27C512 PDIP28 PLCC32
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

Contextual Info: /T T SGS'THOMSON ^ 7 # G fflD IIM ilLIO T M O IS i M 2 7V 5 12 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ FAST ACCESS TIME: 90ns ■ LOW POWER “CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100|jA

M27C512

Abstract: M27V512 M27W512 PDIP28 PLCC32
Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM NOT FOR NEW DESIGN LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

M27G512

Contextual Info: 5 F. _ M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: - Active Current 10m A at5M H z - Standby Current 10^A ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

Contextual Info: M27V512 512 Kbit 64Kb x 8 Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz – Standby Current 10µA PROGRAMMING VOLTAGE: 12.75V ± 0.25V PROGRAMMING TIME: 100µs/byte (typical)

M27C512

Abstract: PDIP28 PLCC32 M27C512 SGS-THOMSON presto IIB
Contextual Info: M27C512 512K 64K x 8 UV EPROM and OTP EPROM FAST ACCESS TIME: 45ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED PROGRAMMING PROGRAMMING TIMES of AROUND 6sec.

M27V512

Abstract: PDIP28 PLCC32
Contextual Info: M27V512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • LOW VOLTAGE READ OPERATION: 3V to 3.6V ■ FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION: – Active Current 10mA at 5MHz 28 28 – Standby Current 10µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V

NS1051

Contextual Info: M27V512 LOW VOLTAGE 512K 64K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA – Standby Current 100µA PROGRAMMING VOLTAGE: 12.75V ELECTRONIC SIGNATURE for AUTOMATED

SGS M27C512

Abstract: M27C512 PDIP28 PLCC32
Contextual Info: F Z J SGS-THOMSON ^ 7 # M27C512 [lQ g û œ Œ (i* M O (g S CMOS 512K (64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 80ns « CO M PATIBLE W ITH HIGH SPEED M IC R O ­ PROCESSORS, ZERO WAIT STATE • LOW POWER “CM O S” CONSUMPTION: - Active Current 30mA

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

Contextual Info: SGS-THOMSON 0 ® [ l[ L i© r a ® K ilQ © S M 2 7 C 5 1 2 512K 64K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 60ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER “CMOS’ CONSUMPTION: - Active Current 30mA

M27C512

Abstract: PDIP28 PLCC32
Contextual Info: M27C512 512 Kbit 64Kb x8 UV EPROM and OTP EPROM • 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: 45ns ■ LOW POWER “CMOS” CONSUMPTION: – Active Current 30mA 28 28 – Standby Current 100µA ■ PROGRAMMING VOLTAGE: 12.75V ± 0.25V ■

M27C512

Abstract: M27W512 PDIP28 PLCC32
Contextual Info: M27W512 512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V – 80ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C512 ■ LOW POWER CONSUMPTION: – 15µA max Standby Current