V10 DIODE Search Results

Kinetis CMSIS 2.10

Abstract: BD1020HFV
Contextual Info: CodeWarrior Development Studio for Microcontrollers V10.x FAQ Guide Document Number: CWMCUFAQ Rev 10.5, 09/2013 CodeWarrior Development Studio for Microcontrollers V10.x FAQ Guide, Rev. 10.5, 09/2013 2 Freescale Semiconductor, Inc. Contents Section number

Contextual Info: KILOVOLT Series 2000 Volt & 3000 Volt PIN Diodes MA4PK200X & MA4PK300X V10 Features • • • • • • • • Package Outlines Reverse Voltage up to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Throw Kilowatt Switches Low Loss, Low Distortion

MA4PK3001

Abstract: MA4PK2000 MA4PK2001 MA4PK2002 MA4PK2003 MA4PK3000 MA4PK3002 MA4PK300X 10-32 UNF-3A tesla Diode
Contextual Info: KILOVOLT Series 2000 Volt & 3000 Volt PIN Diodes MA4PK200X & MA4PK300X V10 Features • • • • • • • • Package Outlines Reverse Voltage up to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Throw Kilowatt Switches Low Loss, Low Distortion

MA4ST2000

Abstract: MAVR-002200-11410T MAVR-002200-12790T MAVR-002300-11410T MAVR-002300-12790T MAVR-002400-12790T MAVR-002500-12790T MAVR-002600-12790T MA4ST2300 MAVR-002200-XXXXXX
Contextual Info: MA4ST2000 Series Ultra High Ratio Si Hyperabrupt Varactor Diode Rev. V10 Features • Ultra High Capacitance Ratio, • • • SC-70 3 lead SOD-323 C(0.1V)/C(4.7V) =18:1 C(0.1V)/C(2.7V) = 12:1 Surface Mount Plastic Packages: SC-79, SOD323, SC-70, 3 Lead

MA4P1250 PIN

Abstract: MA4P MA4P4006-1091T JC5W
Contextual Info: MA4P HIPAX High Power PIN Diodes V10 Package Styles Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Power Handling Low Loss / Low Distortion Voltage Ratings up to 1000 Volts Passivated Chip for Low Leakage Current Low Theta θ Due to Full Face Chip Bonding

VF-45

Abstract: 1000BASE-SX V23818-K305-V10 laser bar driver advantages of 1000base-sx
Contextual Info: V23818-K305-V10 Small Form Factor Multimode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver with VF-45 Volition Connector Preliminary Dimensions in (mm) inches (13.59) Max. .535 (10.16) .400 (13.97) Min .550 Pitch 9x (1.78) .070 (16) .630 -B (12) .472 (7.59)

731 zener diode

Abstract: FR 309 diode 217F diode zener c5 R27A
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA60-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

217F

Abstract: resistor film transistor MTBF L2 diode 725
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-5 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

SYLGARD

Contextual Info: Silicon PIN Chips RoHS Compliant V10 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed

Contextual Info: Silicon PIN Chips RoHS Compliant V10 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Switch & Attenuator Die Extensive Selection of I-Region Lengths Hermetic Glass Passivated CERMACHIP Oxide Passivated Planar Chips Voltage Ratings to 3000V Fast Switching Speed

variable resistor 502

Abstract: OPTOCUPLER HAND BOOK 217F ZPSA40-24 zpsa40 capacitor Electrolytic
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-24 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode, Fast 1 D2 6.1 Diode,General 1 BR1 6.1 Diode,General

MB91467

Abstract: st9 technical MB91460 91460 MB91F460D Analog Microelectronics MB91F460
Contextual Info: Fujitsu Microelectronics Europe Application Note MCU-AN-300070-E-V10 FR FAMILY 32-BIT MICROCONTROLLER MB91460 A/D CONVERTER APPLICATION NOTE ANALOG TO DIGITAL CONVERTER Revision History Revision History Date 2008-04-23 Issue V1.0, First draft, HPi This document contains 27 pages.

DIODE 4008

Abstract: "DIODE" 4008 217F capacitor Electrolytic zener3 optocupler 105 capacitor
Contextual Info: Data Base : MIL - HDBK - 217F Notice 1 Environment : GB, 25℃ Input: 115V Output: Full Load Unit : ZPSA40-12 Ver: V10 Date: 2008/8/21 CAT TYPE Q'ty 5.1 Microcircuits 1 IC3 6.1 Diode, Fast 1 D1 6.1 Diode,General 1 BR1 6.1 Diode,General 1 D2 6.1 Diode,General

SM 850nm laser

Contextual Info: V23818-K305-V10 SIEMENS Small Form Factor Multim ode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver with VF-45 Volition Connector Preliminary D im ension s in (m m) inches (13.59) Max. 535 (13.97) Min .550 Pitch (1.78) .070 (16) .630 ( 12 ) .472 2,0(1O7S>

Contextual Info: Bulletin E-26 Model V10 Flotect Mini-Size Flow Switch Specifications – Installation and Operating Instructions 4 [101.6] 2-7/8 [73.07] LOWER BODY 18 AWG LEAD WIRES 19˝ [482.6] LONG CABLE 1 [25.40] 2-7/8 [73.07] 7/8 HEX 1/4 [6.35] TRAVEL TO NORMALLY CLOSED

ECO-TOP

Abstract: DWLP55-12
Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 75/12* Preliminary Data Sheet S15 R15 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 V3 ECO-TOPTM 1 V6 typical picture, for pin configuration see outline drawing IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK

ADCD02

Abstract: MB91470 MB91480 sk9147
Contextual Info: Fujitsu Microelectronics Europe Application Note MCU-AN-300108-E-V10 FR FAMILY 32-BIT MICROCONTROLLER MB91470/480 SERIES A/D CONVERTER APPLICATION NOTE A/D CONVERTER Chapter 0 Revision History Revision History Date 2008-03-28 2008-09-29 Issue CHa: First draft, partly based on 16FX ADC application note by MWi

transistor opm

Abstract: inductive sensor SYMBOL
Contextual Info: IGBT Module PSII 100/06* IC80 = VCES = VCE sat typ.= Short Circuit SOA Capability Square RBSOA 80 A 600 V 2.3 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol A15 A7 A9 G15 V12 V13 N15 V9 V10 D1

Contextual Info: V23818-K305-V10 Small Form Factor Multimode 850 nm 1.3 Gigabit Ethernet 2x5 Transceiver w ith VF-45 Volition Connector Prelim inary D im ension s in (m m ) inches dEr-; dEr-; he:-; 0O.3&.O14 i8 ) | a | B(M)|C I ->.0 0 .3 ^ .0 1 4 (8 ) |0 0.10/.004(M)

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 30/06* Short Circuit SOA Capability Square RBSOA 29 A 600 V 2.4 V Preliminary Data Sheet ECO-TOPTM 1 S15 R15 IGBTs A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1 V1 K1 Q1 G1 N1 typical picture, for pin configuration see outline

VID125-12P1

Contextual Info: IGBT Module IC80 = VCES = VCE sat typ. = PSII 100/12* Short Circuit SOA Capability Square RBSOA 90 A 1200 V 2.8 V Preliminary Data Sheet S15 R15 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot ECO-TOPTM 1 A15 A7 A9 G15 V12 V13 N15 V9 V10 D1 A1 U1

842 ic

Abstract: D-68623 E72873 IC N10
Contextual Info: MWI 75-12 A5 IC25 = 90 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

diode T 3512

Abstract: D-68623 E72873 ds 35-12 e ixys MWI 35-12 A5
Contextual Info: MWI 35-12 A5 IC25 = 45 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C

D-68623

Abstract: E72873
Contextual Info: MWI 50-12 A5 IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA W1 A10 B10 I 10 K10 R10 S10 F3 K3 P3 E10 F10 M10 N10 V10 W10 E 72873 A1 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C