V. 9015 C Search Results

transistor c 9018

Abstract: Transistor CL 100 9011 9012 9013 9014 9018 transistor 9014 NPN transistor 9013 NPN audio output V. 9014 c 9016 transistor audio output TRANSISTOR NPN 9013 9011 NPN transistor npn 9016 transistor
Contextual Info: SELECTION GUIDE FOR AM / FM RADIO TRANSISTOR KIT Output AM R E C E IV E R r- IF 2 IF1 Conv. 901Ì 901 9012 A F Amp. 9011 SP. 9014 or :9015 7 <1 9013 Output FM R E C E IV E R F M RF 90! 6 rF M Conv. F M IF A M Conv. 9011/8 9016/8 A M / F M IF AF A m o A M / F M IF

9015 pinout

Abstract: diac quad nor gate 9015DM 9015FC 9015FM V. 9015 c
Contextual Info: 9XXX Series CO NNECTION DIAC¡RAM PINOUT A 9015 QUAD NOR GATE DESCRIPTION — The 9015 consists of three 2-input and one 4-input NOR gates. The NOR gate produces a LOW output if any of the inputs are HIGH. U. ORDERING CODE: See Section 9 PIN PKGS OUT COMMERCIAL GRADE

transistor 9015 c

Abstract: 9015 PNP
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number Package

irf9010

Abstract: D0123 irf90 9015 Free 9014 IRF901 V. 9015 c J77A irfu9010 irfr9010
Contextual Info: SAMSUNG ELECTRONICS INC b4E T> • T'ibMlMZ 0Ü153L.D IRFR9 0 1 0/1 2 /14/15 IRFU9 0 1 0/12/14/15 P-CHANNEL POWER MOSFETS FEATURES • • • • • • • ■ SMGK D-PACK Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

BR 9014

Abstract: BR 9015 BR 9014 C transistor 9015 c 9015 transistor data sheet transistor 9014 transistor 9015 9015 pnp pnp transistor 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. 1. Emitter 2. Base 3. Collector

br 9015

Abstract: pnp transistor 9015 transistor 9015 c 9015 pnp BR 9014 transistor c 9015 9015 transistor C 9015 transistor transistor 9015 BR 9015 C
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9015

Abstract: transistor 9015 c transistor c 9015 BR 9015 C pnp transistor 9015 transistors BR 9015 9015 pnp transistor 9015 9015* Transistor C 9015 transistor
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

Contextual Info: UTC 9015 PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE FEATURES *High total power dissipation. 450mW *Excellent hFE linearity. *Complementary to UTC 9014 1 TO-92 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

transistor c 9015

Abstract: BR 9014 BR 9015 BR 9014 transistor transistor 9015 c 9015 PNP pnp transistor 9015 BR 9014 C TRANSISTOR transistors BR 9015 9015 TO-92
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

BR 9014

Abstract: BR 9014 transistor BR 9015 BR 9014 c transistors BR 9015 transistor 9014 NPN 9015 PNP transistor 9015 c transistor c 9015 TS 9015
Contextual Info: ST 9015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, A, B, C and D, according to its DC current gain. As complementary type the NPN transistor ST 9014 is recommended. On special request, these transistors can be

transistor 9015 c

Abstract: pnp transistor 9015 9015 TO-92 transistor c 9015 v 9015 transistor C 9015 transistor transistor 9015 Free 9014 9015* Transistor
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number

UTC9014

Abstract: utc 9014 9015 TO-92 transistor 9014 c
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9015 Preliminary PNP EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9014 „ ORDERING INFORMATION Ordering Number

876047-1

Abstract: 926683-3 826841-1 826850-3 926300-3 926299-1 926884-1 926882-1 826842-3 tyco connectors 350715-1
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Universal MATE-N-LOK Connectors Revised 1-04 Product Facts Pins and sockets can be intermixed in the same housing • Positive polarisation 9 ■ Rear cavity identification

Contextual Info: 4 M V H P Catalog 1307612 Universal MATE-N-LOK Connectors Revised 7-01 PC Board Right-Angle Pin and Socket Headers Product Specification: 2 ,3 ,4 ,5 , 6 and 8 Circuit, In-line Centerline spacing— .250 [6.35] Material: Housing— Nylon Contacts— Phosphor bronze

Contextual Info: Catalog 1307612 Universal MATE-N-LOK Connectors Revised 7-01 C o n tacts U sed w ith Sp lash Proof S eals Product Specifications: Solid pin diameter— .084 [2.13] Split pin diameter— 086 [2 1 8 ] Stock thickness— .012 [.305] unless otherwise noted. tC

Thyristor MCD

Abstract: mdc 90-12 ABB thyristor modules 90-08io8 DIODE REDRESSEMENT mcd 132
Contextual Info: A S E A BROüJN/ABB ~fl3 FI Dcmfl30ó QQoans E F SEMICON • Netz-Thyristor-Diode-Module _ _ 1 T— 25-23 S 3 f£ v ~ : B ES Phase control Thyristor-Diode-Modules Daten pro Diode Oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

TTL LS 7407

Abstract: CI 7407 CI 7402 TTL LS 7402 ls 7408 TTL 74s02 CI 74LS02 74LS27 TTL 7425 TTL 74ls02
Contextual Info: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-TTL D7 54/7430, 54H/74H30 54S/74S30, 54LS/74LS30 Vcc NC r r r NC r D8 54S/74S133, 54LS/74LS133 D9 54S/74S134 Vcc NC r fi fi Ili ill HI Li Lil lil GND LzJ R R R R F IR R F I E RRRRRRRFl li lli lli lli J lill ill ill iJGND

Contextual Info: Catalog 1307612 A I V I F * Universal MATE-N-LOK Connectors Revised 7-01 PC Board Vertical Socket Headers Product Specification: 2, 3, 4, 5, and 6 Centerline spacing— .250 [6.35] C ircu it, In-Line Polarizing feature Material: Housing— UL94V-2 Nylon, natural

mcc 90-12

Abstract: MCC 90-16 mcc 250 thyristor abb mcc 90-12 ABB thyristor modules MCC 65 ABB mcc MCC 90-06 io 8 Thyristor mcc mcc 90-08 ABB thyristor modules
Contextual Info: A S E A BROUN/ABB SEMICON Netz-Thyristor-Module aJ- F | 00Mfl30fl ouuuiiii i l ] Phase control Thyristor-Modules T - 2 5 - 2 3 EE! Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor

Contextual Info: A I V I I 9 Catalog 1307612 Universal MATE-N-LOK Connectors Revised 7-01 PC Board Vertical Pin Headers Product Specification: Polarizing feature 2, 3, 4, 5, 6 and 8 Circuit, In-Line Centerline spacing— 250 [6 35] .175 Standard Tail [ 4 .45 ] Housing— UL94V-2 Nylon, natural

IRf 9024

Abstract: 9H20 9S05A ST 9014 C
Contextual Info: SSI • GATES, BUFFERSAND INVERTERS STANDARD HIGH SPEED SUPER HIGH SPEED SCHOTTKY tpd = 8 ns Pd = 10 mW per Gate tpd = 6 ns Pd = 22 mW per Gate tpd = 3 ns Pd " 19 mW per Gate ^ 0°C to + 7 0 °C and - 5 5 ° t o +125° C V 9002 0° to +70° C - 5 5 ° to +125°C

59015

Abstract: s9015 transistor BR 9015 S9015 transistor 59015 FR510 9015 2J LG CRT Transistor 9015 M6 ade 510
Contextual Info: PNP General Purpose Transistors MAXIMUM RATINGS Hading Sym bol V a lu e u n it Collectiar-Err’ rttar VallfiiflÈ V CED •45 Vdc Collector-BasE tohagô VC B O VE BO L'Û -5 Vdc Emitter-Base VO:agB C ü lltd or C u rra rl-C tn tir uoja IC Vdc made -1 0 0

8050 8550

Abstract: 9013 8550 transistor to-5 9013 transistor UTC 9013 27.145 8550 2M B 8550 qw transistor c 9013 IN4148
Contextual Info: UTC RCR03 CMOS 3 FUNCTION DECODER FOR REMOTE CONTROLLER DESCRIPTION The UTC RCR03 is CMOS LST designed for the remote controlled toy. The received signal is amplified by the three-stage amplifier, and then the appropriate amplified signal is sampled, fault-tolerantly checked and decoded to

kss213

Abstract: SA9618A kss213 vl KSS-213 DA11 C370 sa9618
Contextual Info: SA9618A CD SA9618A CD ALPC CD VREF RF CD-R ALPC CD-R/W CD-A/V CD-ROM SOP-16-225-1.27 * RF CD-A/V CD-R/W * CD-ROM 35mW - 3.5V * * CD-R ALPC 2.8V – 7.0V SA9618A SOP-16-225-1.27 * CD * VCD Tamb=25°C VDD -0.5 ~ +12 V Tmax -20 ~ °C 370 Pmax VDD 2.8 VREF IDD