V 413 L Search Results

339DC

Contextual Info: I N O TES: rue n o . i.oo, BB-CD -301 “ 01 M A T ! : C O PPER STOCK TKN. PLATING : ELECTRO-TIN (.0003 MIN. BRA ZED SEAM STUD SIZES:(-.005) 02 04 06 08 - .094 = .11 9 = .|46 = .173 413=,413 209 =.209 10 = .198 14 56 38 - .265 = .328 * .390 V L IS T IN G #E32244

Diode T3

Abstract: DIODE T4 DSBT2-S-DC24V DSBT2-S-DC12V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC5V dc5v
Contextual Info: TESTING DS-BT RELAYS 4,000 V BREAKDOWN VOLTAGE DS RELAYS FEATURES 20.65 .813 10.65 .419 •4,000 V breakdown voltage •Reinforced insulation between coil and contacts •Surge voltage withstand: 1500 V FCC Parts 68 10.5 .413 mm inch SPECIFICATIONS Contact

DIODE T4

Abstract: DSBT2-S-DC12V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC24V
Contextual Info: TESTING DS-BT RELAYS 4,000 V BREAKDOWN VOLTAGE DS RELAYS FEATURES 20.65 .813 10.65 .419 •4,000 V breakdown voltage •Reinforced insulation between coil and contacts •Surge voltage withstand: 1500 V FCC Parts 68 10.5 .413 mm inch SPECIFICATIONS Characteristics

DS-BT

Abstract: DIODE t2 DSBT2-S-DC24V DSBT2-S-DC5V
Contextual Info: Discontinued TESTING DS-BT RELAYS 4,000 V BREAKDOWN VOLTAGE DS RELAYS FEATURES 20.65 .813 10.65 .419 •4,000 V breakdown voltage •Reinforced insulation between coil and contacts •Surge voltage withstand: 1500 V FCC Parts 68 10.5 .413 mm inch SPECIFICATIONS

DSBT2-S-DC24V

Abstract: DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC12V relay dc6v
Contextual Info: TESTING DS-BT RELAYS 4,000 V BREAKDOWN VOLTAGE DS RELAYS FEATURES 20.65 .813 10.65 .419 •4,000 V breakdown voltage •Reinforced insulation between coil and contacts •Surge voltage withstand: 1500 V FCC Parts 68 10.5 .413 mm inch SPECIFICATIONS Contact

Contextual Info: RS ITEM NO 206-413 APEM ITEM NO Q12P1BXXB230E LED/Multiled LED Optimum voltage V 230Vac Intensity Mounting Size 12mm Rectifier - Reverse Voltage Mounting Finish Prominent AC current 3mA (max) Protection IP67 DC current - Mount Holder Black Bezel Voltage Tolerance(%)

SPC-401

Abstract: SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-425
Contextual Info: A P I □□43512 0GDD2TD T31 • ANC blE D ELECTRONICS INC HIGH VOLTAGE TRANSISTORS PT TYPE NO. SPC-401 SPC-402 SPC-410 SPC-411 SPC-413 ¿PC-423 SPC-423JV SPC-424 ¿PC-425 @ @ @ VCEO Ic VCEO ICEO V cex le Ic @ SUS 25°C MAX 125°C V MA V MA Watts A V MA

TELEFUNKEN* U 413 B

Abstract: Telefunken u 690 u413b telefunken Book Microelectronic Telefunken Electronic u 413 413B 413 temic u413
Contextual Info: U 413 B TELEFUNKEN Semiconductors Monolithic Integrated Circuit Application Audio–Amplifier for portable radios, cassette recorders and general purposes. Features D Large supply voltage range VS = 3 . 16 V D Audio output power Po = 1.5 W D Low cross–over distortion

transistor JSW

Contextual Info: □ ANALOG DEVICES LowNoise, LowDrift Single-Supply Operational Amplifiers OP-113/0P-213/0P-413* FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V R z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 jjlV Very Low Drift: 0.2 |xV/°C Unity Gain Stable

HC210

Abstract: EP2S30 HC220 HC230 HC240 SSTL-18 PCI-x I/O
Contextual Info: Using Legacy Integrated Static Data Path and Controller Megafunction with HardCopy II Structured ASICs Application Note 413 July 2007, ver 2.1 Introduction HardCopy II devices are low-cost, high-performance, 1.2-V, 90 nm structured ASICs with pinouts, densities, and architecture that

Contextual Info: ► JÎJL ,93 ANALOG ► DEVICES Low Noise, Low Drift Single-Supply Operational Amplifier O P -1 1 3/0P-213/0P-413 * FEATURES Single- or Dual-Supply Operation Low Noise: 4.7 n V /V H z @ 1 kHz Wide Bandwidth: 3.4 MHz Low Offset Voltage: 100 j«,V Very Low Drift: 0.2 |aV /0C

T718N

Abstract: T1189N T1509N T1989N T358N T508N T588N T879N
Contextual Info: Koppel - Thyristor + Gleichspannung Sperrspannung Bauelement VDRM/RRM 700 V 800 V 1400 V 1600 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung [°C] [A] [W] 25 302 431 482 609 943 1225 1406 1791 2025 2910 290 413 462 583

Contextual Info: s e MIKROn C o n d itio n s 1’ vV js o l 4 AC, 1min Operating / stor. tem perature o o /)—I S’ Symbol —I SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °c 1200 V V A IGBT and FW D Diode VcES V cc5)

Matsushita Relay 24 VDC 5A

Abstract: 5 V DC RELAY MATSUSHITA RELAY DSP2A dsp relay Matsushita dsp1a Matsushita Relay dsp RELAY DC12V DATA SHEET sine wave ups SCHEMATIC DSP1-DC12V LR26550
Contextual Info: DSP DSPRELAYS MINIATURE POWER RELAY IN DS RELAY SERIES UL File No.: E43028 CSA File No.: LR26550 11.0 .433 20.2 .795 10.5 .413 DSP1a DSP1 mm inch DSP2a • Power types added to DS relay series • High switching capacity: 1a: 8 A 250 V AC 1a1b, 2a: 5 A 250 V AC

Contextual Info: A N A LO G Low Noise, Low Drift D E V IC E S _ Single-Supply Operational Amplifier OP-113/0P-213/0P-413 □ FEATURES Single-Supply Operation Low Noise: 6 nV /V H z @ 1 kHz Wide Bandwidth: 3 MHz Low Offset Voltage: 150 |nV Very Low Drift: 0.2 |i.V/°C

LH2464-12

Abstract: LH2464-10 LH2464-15 dynamic ram nmos 18 pins lh2464 AS2v
Contextual Info: LH2464 FEATURES • 65,536 x 4 bit organization • Access times: 100/120/150 ns MAX. • Cycle times: 200/220/260 ns (MIN.) • Page mode, Read-Modify-Write operation • Power supply: +5 V + 10% • Power consumption (MAX.): Operating: 523/457/413 mW (MAX.)

DIODE T4

Abstract: DSBT2-S-DC12V DS2E-M-DC24V DIODE t3 DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V DSBT2-S-DC24V LR26550 DSBT2-S-DC5V
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

15-V

Abstract: DG411 DG411DJ DG412 DG413
Contextual Info: DG411/412/413 Precision Monolithic Quad SPST CMOS Analog Switches Features Benefits Applications D D D D D D D D Widest Dynamic Range D Low Signal Errors and Distortion D Break-Before-Make Switching Action D Simple Interfacing D D D D D 44-V Supply Max Rating

dg4120

Abstract: DG413AK 15-V DG411 DG411DJ DG412 DG412DJ DG413
Contextual Info: DG411/412/413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance—rDS on : 25 W Fast Switching—tON: 110 ns Ultra Low Power—PD: 0.35 mW

lh2465

Contextual Info: LH2465 FEATURES • 65,536 x 4 bit organization • Access times: 120/150 ns MAX. • Cycle times: 220/260 ns (MIN.) • Nibble-Mode, Read-Modify-Write operation • Power supply: +5 V ± 10% • Power consumption: Operating: 457/413 mW (MAX.) Standby: 27.5 mW (MAX.)

DSBT2-S-DC12V

Abstract: DIODE T4 RELAY 1500 V LR26550 DSBT2-S-DC24V MBB relay RELAY DC12V DATA SHEET DS2E-M-DC24V DSBT2-M-2D-DC12V DSBT2-M-2D-DC24V LR26550
Contextual Info: DS-BT DS-BT RELAYS BABT APPROVED DS RELAYS 20.65 .813 BABT CR No.: 0104 UL File No.: E43149 CSA File No.: LR26550 10.65 .419 10.5 .413 • • • • mm inch Approved by BABT Certificate of Recognition 4,000 V breakdown voltage Reinforced insulation between coil and contacts

DG411

Abstract: DG411DJ DG412Ak
Contextual Info: DG411/412/413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance—rDS on : 25 W Fast Switching—tON: 110 ns Ultra Low Power—PD: 0.35 mW

15-V

Abstract: DG411 DG411DJ DG412 DG412DJ DG413 dg412ak
Contextual Info: DG411/412/413 Vishay Siliconix Precision Monolithic Quad SPST CMOS Analog Switches FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D D 44-V Supply Max Rating "15-V Analog Signal Range On-Resistance—rDS on : 25 W Fast Switching—tON: 110 ns Ultra Low Power—PD: 0.35 mW

Contextual Info: SEMiX604GB126HDs Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 150 °C 1200 V Tc = 25 °C 590 A Tc = 80 °C 413 A 400 A ICnom ICRM SEMiX 4s Trench IGBT Modules SEMiX604GB126HDs VGES tpsc Tj ICRM = 2xICnom VCC = 600 V