V 325 T Search Results

Contextual Info: TRS325HP Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ã V(BR)CBO (V)325 I(C) Max. (A) Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: TRS3255 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ã V(BR)CBO (V)325 I(C) Max. (A)400m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

LM325

Abstract: LM326 LM125 LM126 LM325A sl501 lm1250 LM325/LM326
Contextual Info: - LM125, 325/A, 126, 326 ttitJU E f. ± 1 2 V 1 2 V /+ 1 5 V ± 1 5 V O h 9 -y * > ? • U 4 f'^ 9 93 n - s I J x A.5ÈIÌÌS V ,N : ± 3 0 V 7 y - y ii 7 T O -5 ¡ 7 X f 7 Ì7 O IL y “ '7 - y ' ( LM 325, LM 325A , L M 326) t {LM 125, LM 325, LM 126, LM 326) ¿ S fe * .

ST200C

Contextual Info: INTERNATIONAL RECTIFIER HÔS5452 001G705 7 EbE D Phase Control Thyristors 445 TO 770 AMPS RMS Part V number V RRM ’•¡• RMS ’ t (AV) TC VGT ■gt 50Hz 60Hz (2) DRM (V) *TSM W (A) (°C) (A) 325. 300 325 300 300 280 300 280 280 275 280 275 275 265 275

AD8058AR-EBZ

Abstract: fet preamp H08 SOT23-5 AD8057 AD8058 AD9220 AD9221 AD9223 AD9224 AD9225
Contextual Info: Low Cost, High Performance Voltage Feedback, 325 MHz Amplifier AD8057/AD8058 FEATURES CONNECTION DIAGRAMS Low cost single AD8057 and dual (AD8058) High speed 325 MHz, −3 dB bandwidth (G = +1) 1000 V/ s slew rate Gain flatness: 0.1 dB to 28 MHz Low noise

AD8057AR-REEL7

Abstract: AD8057ART-R2 AD8057ART-REEL AD8058 AD8057 AD8057ACHIPS AD8057AR AD8057AR-REEL
Contextual Info: Low Cost, High Performance Voltage Feedback, 325 MHz Amplifiers AD8057/AD8058 FEATURES Low Cost Single AD8057 and Dual (AD8058) High Speed 325 MHz –3 dB Bandwidth (G = +1) 1000 V/␮s Slew Rate Gain Flatness 0.1 dB to 28 MHz Low Noise 7 nV/√Hz Low Power

Contextual Info: ¿¿b □ QGEhhO ¿bThOGb • H iaV IIV A V N ñ 3D V M Absolute Maximum Ratings* Ta = 25°C Symbol HPMA-2000 Value HPMA-201111'3] HPMA-2035123! 50 mA 325 mW +20 dBm 200°C -65°C to +200°C 50 mA 250 mW +20 dBm 150°C -65°C to +150°C 60 mA 325 mW +20 dBm

Contextual Info: DRAWING No.: M80-4DI0405FI-02-325-02-325 Customer Information Sheet T^TT SHEET 2 OF IF 2 IN DOUBT - ASK NOT TO SCALE THIRD ANGLE PROJECTION ALL DIMENSIONS IN mm SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L 9 4 V - 0 , BLACK SIGNAL CONTACT:

Contextual Info: Customer Information Sheet D RAWING N o .: SHEET M80-4DI1005FN-02-325-04-325 2 OF 2 1 IF IN D OUBT - ASK | c | NOT TO SCALE | THIRD ANGLE PROJECTION I ALL DIMENSIONS IN SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L9 4 V -0 , SIGNAL CONTACT:

metric screw tightening Torque

Abstract: 14981
Contextual Info: Series 32500 .325" Center-to-Center Spacing Features: ‡ Complete Line of .325" Offset Blocks – Including base mount, P.C. Pin, wire wrap, turret, and right angle terminals ‡ Open or Tri Barrier Designs – To meet your wiring requirements ‡ UL & CSA Recognized – With a 94 V-O flammability rating

Contextual Info: DRAWING No.: Customer Informatic>n Sheet SHEET M80-4C11205F1-03-325-02-325 2 OF 2 1 IF IN DOUBT - ASK 1 Ç NOT 1 TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS I N mm SPECIFICATIONS: MATERIAL: MOULDING: GLASS F I L L E D PPS, U L9 4 V -0 , BLACK SIGNAL CONTACT:

Contextual Info: DRAWING No.: M80-4DI0805F2-08-325-02-325 Customer Informatic>n Sheet SHEET 2 OF 2 1 IF IN DOUBT - ASK i NOT i TO SCALE | THIRD ANGLE PROJECTION 1 ALL DIMENSIONS IN mm SPECIFICATIONS: MATERIAL: MOU LDING: GLASS F I L L E D PPS, U L 9 4 V - 0 , BLACK SIGNAL CONTACT:

Contextual Info: AN ALO G D EV IC ES Low Cost, High Performance Voltage Feedback, 325 MHz Amplifiers AD8057/AD8058 FEA T U R ES Low C o st Single AD8057 and Dual (AD8058) High Speed 325 MHz, -3 dB Bandw idth (G = +1) 1000 V/(jis S le w Rate Gain Flatn ess 0.1 dB to 28 MHz

MC145406

Contextual Info: Triple Line E IA 2 3 2 D D river/R eceiver f & a 4k n-fi f t M IN Ta -4 0 V cc 4 .5 Icc V cc=5V n — TYP 9 MAX +85 tt £ Jfi f £ m % 6C 5 5 .5 V TI 300 450 f*A FC L—H 200 325 NS H -*L 200 325 MOT L -»H 150 300 S ig H -*L 150 300 AMD D r iv e r toH

Contextual Info: BD157/158/159 NPN EPITXIAL SILICON TRANSISTOR LOW POWER FAST SWITCHING OUTPUT STAGES FOR T.V RADIO AUDIO OUTPUT AMPLIFIERS ABSOLUTE MAXIMUM RATINGS C haracteristic Rating Unit 275 V : BD158 325 V : BD159 375 V 250 V : BD158 300 V : BD159 350 V 5 V A C ollector Base Voltage

Contextual Info: 32CTQ030 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.325 V(FM) Max.(V) Forward Voltage420m @I(FM) (A) (Test Condition)15

Contextual Info: 32CTQ025 Diodes Center-Tapped Positive CC Schottky Rectifier Military/High-RelN I O Max.(A) Output Current30 @Temp (øC) (Test Condition)90# V(RRM)(V) Rep.Pk.Rev. Voltage25 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.325 V(FM) Max.(V) Forward Voltage420m @I(FM) (A) (Test Condition)15

Contextual Info: KSP1145 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: SDT4945 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)53 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 325 Carrier - IC-Fassung / IC-Leiste auf Kunststoffträger Carrier - IC Socket / IC-Strip on Plastic Holder W+P PRODUCTS Technische Daten /Technical Data Gehäuse/Abdeckung/Hebel Thermoplastischer Kunststoff, nach UL94 V-0 Case/Cover/Actuator Thermoplastic, rated UL94 V-0

Contextual Info: SDT7904 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)325 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MHT7905 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325 V(BR)CBO (V)350 I(C) Max. (A)10 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: ± DRW NO. ZONE R E V - C - 325 - 6010 - 500 SCR NUMBER S B A R - 6 M B L D 2 . VERO 1 BY HCL DESCRIPTION NEW R E L E A S E SH 1 REV - DA T E 03/06/06 APPROVED D,SMITH RIGHT POLARIZING BACKPLANE MODULE ASSEMBLY P A R T NUMBER A S S I G N M E N T 325 - X 0 XX - X X X

Contextual Info: 413 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)325ö V(BR)CBO (V)400 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)250u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)