V 20 K 180 Search Results

Contextual Info: s EMIKRDn VRSM V r rm dv/dt cr Itrm s (m a xim u m valu e for continuous operation) 40 A V d rm Ita v (Sin. V V V /|is 180; Tease = 60 °C) 25 A 700 600 500 S K K T 19/06 D S K K T 20/06 □ - 900 800 500 S K K T 19/08 D S K K T 20/0 8 D S K K T 2 0B 0 8 D

TLR372

Abstract: man2a DLO-7135 LT-5101P DLR-5735 LM-0355VRB LM-035VRA SLA-1221 TLR373 5104D
Contextual Info: -8 9 - £ % £ tt it £ t T iS ? h •r tí n = ? * > •? / - K ft A./* AX IF I V If nm! i.nmi imA (medi (mA) VF (V j (mA) U A i V/? -'VÌ (V) 5 GaAsP 660 20 10 0.3 10 1.8 20 100 5 20 5X7 GaAsP 660 20 10 0.25 10 1.6 20 100 5 20 MAN29 - 0.32 5X7 GaAsP 635

STPS40120CR

Abstract: JESD97 STPS40120C STPS40120CT
Contextual Info: STPS40120C Power Schottky rectifier Main product characteristics IF AV A1 2 x 20 A VRRM 120 V Tj(max) 175° C VF(typ) 0.57 V K A2 K K Feature and benefits • High junction temperature capability ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and

STTH2002

Abstract: STTH2002D STTH2002G Diode STTH STTH STTH2002DI STTH2002G-TR
Contextual Info: STTH2002 Ultrafast recovery diode Main product characteristics IF AV 20 A VRRM 200 V Tj (max) 175° C VF (typ) 0.86 V trr (typ) 16 ns K A K A Features and benefits • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses

CL-140R-CD

Abstract: GL1HD21 my50b SEL103S led sel103r LT1T52A HLMP-P105 HLMP-Q101 HLMP-Q105 MV54B
Contextual Info: 49IX ILL v r, it -t-liOfit £ 2 6H r •í- CI. 5IÌUR-CD 'deg Mit CL-61UR-CD Xr T ,- 25 C —25'C- ß iü 'ir jt u : /, I, IV V ly :£«'± fciÊ.SÆ ly u mA V: C Mi 1« f 660 25 20 1.8 20 25 5 -25 —83 11 + 660 25 20 1.8 20 20 5 25-85 11 tn. K 2.4 5 -*■ - ''"L E D

SKM 181 R

Abstract: semikron semitrans skm 151 mosfet SKM 111 AR SKM 121 R SKM 300 CIRCUIT SKM151R nf 52 ar skm204a SKM 121 AR
Contextual Info: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ AC, 1 min. DIN 40 040 DIN IEC 68 T.1 500 500 48 192 ± 20 625 –40 . +150 (125) 2 500 Class F 40/125/56 V V A A V W °C V 48

Contextual Info: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A

30TPS16

Contextual Info: 30TPS16PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 A TO-247AC 1 (K) (G) 3 PRODUCT SUMMARY VT at 20 A < 1.3 V ITSM 300 A VRRM 1600 V The 30TPS16PbF High Voltage Series of silicon Pb-free controlled rectifiers are specifically designed for

30TPS12

Abstract: Silicon Controlled Rectifiers High frequency
Contextual Info: 30TPS.PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 A TO-247AC 1 (K) (G) 3 PRODUCT SUMMARY VT at 20 A < 1.3 V ITSM 300 A VRRM 800/1200 V The 30TPS.PbF High Voltage Series of silicon controlled rectifiers are specifically designed for

Contextual Info: 30TPS.PbF High Voltage Series Vishay High Power Products Phase Control SCR, 20 A DESCRIPTION/FEATURES 2 A TO-247AC 1 (K) (G) 3 PRODUCT SUMMARY VT at 20 A < 1.3 V ITSM 300 A VRRM 800/1200 V The 30TPS.PbF High Voltage Series of silicon controlled rectifiers are specifically designed for

tlg324

Abstract: TLG325 TLG321 SL2284-22 GL7E202 G503 SL-2283 GL6E202 SL-2284-20 GL7E208L
Contextual Info: — 83 — 'x\ it fe tt - r /— K u í > • * '/ - K S L -2283-24,26 SL-2284-24,26 SL-2283-20 £ -f V T tí n # -k Æ fë 1T ,= 2 5 'C iSÊtŒ m m it m Ar Inm H i t t - i ï . I t i t i T „ = 25”C) AX nm ) I f Im A ) I V (medi IF i'mA'1 (V ) I f IH

MAN8610

Abstract: HDSP-N151 HDSP-N101 401d HDSP-N103 MAN3610A MAN3620A MAN3640A MAN3680A MAN4640A
Contextual Info: -68- £ ft % ses -f v tí *4- 3 Í> -T ' — K HDSP-N103 HDSP-N151 HDSP-N153 HP iSSŒ Dp j+¡ -&1W& Ap AA. I f mm. !nm) imA) I V I f imcd) imA) v> IV ) I k I f mA) ( „ A ) 0.8 N13 AlGaAs 650 0.59 1.0 1.6 1.0 0.8 N13(b) AlGaAs 645 14 20 2.0 100 100 Vp (V)

CSC1674R

Abstract: CD9018G CD9018H CD9018J CD965 CD965P CD965Q CD965R CD965S CDN368
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Po k ^CE ^CE(SAT) (V) 00 c* f, Freq c. (MHz) (PF) Max CDIL Case Style ^C80 ''CEO ^EBO (V) Min (V) Min (V) Min CD9018G 20 12

TISP4500H3BJ

Abstract: TISP4500H3BJR TISP4500H3BJR-S GR-1089-CORE
Contextual Info: oH V SC AV ER OM AI SIO PL LA N IA BL S NT E TISP4500H3BJ *R BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage . >245 V rms

Contextual Info: TISP4500H3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS TISP4500H3BJ Overvoltage Protector Non-Conductive During K.20/21/45 Power Contact Test - Off-State Voltage . >245 V rms - For Controlled Environment . 0 °C to 70 °C

LX002

Abstract: crbox LX002 RA25C
Contextual Info: — 263 — • CR.BOX * m it -X b£ fé fê Ta­= 25*C LX002 Vcc Vire (V) 1 (a^-xï-K, ±20 Vcc '<•■;? V + 5—+20 V 7 ft n * te -ë- iSll * £ K ( r « = 25*C) fö ae ft -1- 1« ¥ 1 ft * qt <ir V'i.v=3Vh-p. /=lk H z R l = lkQ 0.98 V /V A Vio U T Icc

Contextual Info: □IXYS MWI 50-06 A7 Advanced Technical Information IGBT Modules IC25 = 72 A Sixpack v ces = 6 0 0 v v CE sat, typ = 1 .8 V Features Symbol Conditions V CES Tj = 25°C to 150°C Tj = 25°C to 150°C; RGE = 20 k£i 600 600 V V ±20 ±30 V V V CGR V GES Continuous

A306

Abstract: STTA306B STTA306B-TR ST A306
Contextual Info: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.

STPS41L45CG

Abstract: STPS41L45CG-TR STPS41L45CR STPS41L45CT
Contextual Info: STPS41L45CG/CT/CR LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 2 x 20 A VRRM 45 V Tj (max) 150 °C VF (max) 0.47 V A1 K A2 FEATURES AND BENEFITS VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING

2SK4103

Abstract: K4103
Contextual Info: 2SK4103 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π-MOSVI 2SK4103 Switching Regulator Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage

IN752A

Abstract: 9431N 1N4371 752a5 1N957
Contextual Info: D O 35 C B 102 Types V z t / 'z t (V ) r Z T / IZ T * (il) max min IZ T Im A ) rZ K (« ) 'Z K <mA) max max aVZ < % /°C ) ' r /V r (m a ) VR (V ) typ Tam b 25 ° C 'ZM (m A ) max B Z X 46-C 75 70 80 250 1,7 20 0 0 0,25 0 ,0 9 5 57 5,3 B Z X 46-C 82 77 87

27CI6

Contextual Info: MII 200-12 A4 IGBT Modules ^C25 Short Circuit SOA Capability V CES V CE sat typ. MID 200-12 A4 270 A 1200 V 2.2 V Square RBSOA MID MDI Preliminary data E 72873 Symbol C onditions Maximum Ratings V qeS Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 20 k il

STPS41L45CG

Abstract: STPS41L45CG-TR
Contextual Info: STPS41L45CG LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF AV 2 x 20 A VRRM 45 V Tj (max) 150 °C VF (max) 0.47 V A1 K A2 FEATURES AND BENEFITS Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop

STTH

Abstract: STTH1502D STTH1502 STTH1502DI STTH1502FP
Contextual Info: STTH1502 Ultrafast recovery diode Main product characteristics IF AV 15 A VRRM 200 V Tj (max) 175° C VF (typ) 0.85 V trr (typ) 20 ns K Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time