V 2 3 0 5 0 Search Results

MEM511

Abstract: MEM511C diode a60 MEM556 mem556c 2N4120 517C 520C 556C MEM561C
Contextual Info: OS TRANSISTOREN P-CHANNEL ENHANCEMENT MODE MOSFETS V br oss V(br) gss Volts V( br) dg Min Volts Min Volts Min Power Dis. 25°C Amb mW Max -30 -2 5 —30 -3 0 -3 0 -2 5 -3 0 -2 5 -5 0 -4 5 -3 5 -3 0 -3 0 -2 5 -2 5 -2 0 -3 0 -4 0 -4 0 -4 0 -4 0 -3 5 -3 0 -4 5

Contextual Info: 101 Surface Mount Devices High Voltage Transistors Ratings Type Package v CEO V v CBO V typ MHz Pinout See Section VII 3 0 /5 3 0 /5 3 0 /5 5 0 /5 60 60 60 100 AE R F F 10/1 200 F 5 0 /5 10/1 2 0 /2 2 0 /2 100 F 200 50 50 F F R 3 0 /5 60 AE 3 0 /5 3 0 /5 2 0 /2

5557-03R

Abstract: 5557-03R2 5559-03P 694V 4030 SD 5569-03A SD-5557-03R2 5566-03A3 5557-03
Contextual Info: MATERIAL SEE NOTE I 3 9 -0 I-4 0 3 0 5 5 5 7 -0 3 R 2 3 9 4 V -2 3 9 -0 I-4 0 3 I 5 5 5 7 -0 3 R 2 - 2 I0 3 9 4 V -0 3 9 - 0 I—5 0 3 9 5 5 5 7 -0 3 R 2 -B L 3 9 4 V -2 8 7 6 »4 ENG NO PART NO 9 10 CKT SIZE in 11 12 13 3 2 NOTES: LEGEND I "BLANK" = NYLON 6 / 6 , 9 4 V -2 , COLOR: NATURAL.

Contextual Info: 48 Fuse terminal block Disconnect terminal block M odular terminal block 0 .0 8 - 2.5 mm2 2 5 0 V / 4 k V / 3 ,16 A O 5 0 0 V / 4 k V / 2 ,16 A O 0 .0 8 - 2.5 m m 2 5 0 V / 4 k V / 3 ,16 A 5 0 0 V / 4 k V / 2 ,16 A 0 .0 8 - 2.5 m m 2 2 5 0 V / 4 k V / 3 ,16 A

Contextual Info: AURORA, IL. 6 0 5 0 5 CONNOR—WINFIELD CORPORATION PHONE 6 3 0 8 5 1 - 4 7 2 2 FAX (6 3 0 ) 8 5 1 - 5 0 4 0 8 PIN DIP YCXO V 61 - 2 0 0 SPECIFICATIONS V 6 2 -2 0 0 Frequency Range V 6 3 -2 0 0 V 6 4 -2 0 0 10OKHz to 30MHz ±25ppm Frequency S tability ±50ppm

W08-0002

Abstract: plasma driver
Contextual Info: Display Drivers OUTPUT CAPABILITY . 800 18 G — 8 0 - 3 .5 1 50V — D I2 2 0 Cathode G — 8 0 - 3 .5 225 V — 800 18 DI 2 3 0 Cathode G — 8 0 - 3 .5 80 V — 800 18 DI 2 3 2 * Cathode G — 9 0 - 3 .5 80 V — 800 22 DI 2 4 0 Cathode G — 8 0 - 3 .5

ZTX415

Abstract: ZTX341 ZTX384 S2222A ZTX327 ZTX321 ZTX3866 ZTX325
Contextual Info: E-LINE TRANSISTORS TABLE 7: GENERAL PURPOSE TRANSISTORS P ART V CBO v CEO hFE m ln @ V V A 300 300 100 25 300 300 100 25 0.5 0.5 0.1 0.2 0.5 0 .3 5 -3 00 -300 -100 -3 00 -3 00 -100 -0 .5 -0 .5 -0.1 -0 .4 -0 .4 -0 .5 -25 -2 5 -0 .2 -0 .3 5 PIN f t LU v CE sat

Contextual Info: Tem ic Si3443DV Semiconductors P-Channel, 2.5-V G-S Rated MOSFET Product Summary V D S (V ) -2 0 r DS(on) (£2) I d (A ) 0 .0 6 5 @ V Gs = - 4 .5 V ± 4 .4 0 .0 9 0 @ V Gs = - 2 .7 V ± 3 .7 0 .1 0 0 @ V Gs = - 2 . 5 V ± 3 .5 (4 )S Q TSOP-6 Top View 3 mm

low pass filter 400hz schematic

Contextual Info: 0 .5 0 0 [1 2 .7 0 ] T EM P , - 5 5 * C / + 1 2 5* C RANGE .0 6 0 [ 1.53] MAX. TYP. WORKING VOLTAGE DC .2 5 0 [6 .3 5 ] 1 ,2 5 0 ± .0 0 5 [6 .3 5 ] ,0 5 [ 1.27] MAX. 25 Qi pc r op AMPS 600 V D C 2 4 0 V A C MAX, 400Hz ,001 EIHMS RESISTANCE 1 .2 5 0 [6 .3 5 ]

SI-3240G

Abstract: SI-3120G BRIDGE-RECTIFIER 12v 5A SI-3150G SI-3050G 3240g 3050G BRIDGE-RECTIFIER 12v 1A BRIDGE-RECTIFIER 12v 2A rectifier diode for max 1.5A
Contextual Info: HYBRID RECTIFIER VOLTAGE REGULATOR SERIES S I - 3 0 0 0 G S I - 3 0 5 0 G 5 V , 2 A S I - 3 1 2 0 G ( 12V, 1 .5 A ) S I - 3 1 5 0 G O 5 V , 1 .5 A ) S I - 3 2 4 0 G ( 2 4 V , 1 .5 A ) * H ig h pow er hybrid voltage reg u lato r incorporating bridge re c tifie r circuit inside.

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

Contextual Info: 0 .0 8 - 4 mm2 5 0 0 V / 6 kV /3 26 A AW G 28 - 1 2 600 V, 20 A f a 6 0 0 V, 2 5 A « 0.08 - 4 mm2 AW G 28 -1 2 600 V, 20 A m 600 V, 25 A « 5 0 0 V /6 k V /3 26 A Term inal block w id th 6 mm / 0 .2 3 6 in k 9 - 1 0 mm / 0 .3 7 in Term inal block w idth 6 mm / 0 .2 3 6 in

LDS-CD12RI

Contextual Info: DATE REVISIONS REV I - 0 .5 .0 2 0 7YP 6 0 .5 ( 2 .3 8 ) 7 ( .2 8 ) 3 .0 ( .1 1 8 ) TYP E D C B A G F 2 3 4 6 7 10 9 unni ir v v y_ v v ir v v !r v DP 8 % v T T T T T T T o . 1 5 UNLESS OTHERWISE SPECIFIED TOLERANCE IS ± . 2 5 m m (± 0 .0 1 0 ’ DRAWING NUMBER

MA177

Abstract: MA156 MA160A 610F 610P MA153 MA153A MA154WK MA155WK MA157A
Contextual Info: * fi m s & Vr r h Vr I FM T °C (V ) (V ) (m A) (m A) ty p 0 .5 0. 5 0. 5 0. 5 0. 5 1. 1. 1. 1. 1. 100 100 100 100 100 0. 0. 0. 0. 025 35 75 35 75 15 2 2 2 2 2 3 3 3 3 2. 2 4 225 225 200 225 225 100 100* 100* 100 100 0. 5 0. 5 100 100 100 100 100 0. 025

Contextual Info: 13 10 g ^C5 V 7A SL VERTICAL HEADER W /LATCH & NO PEGS "B" MM IN . 2 3 4 5 2 .5 4 5 .0 8 7 .6 2 10.16 12.70 15.24 17.78 2 0 .3 2 2 2 .8 6 2 5 .4 0 2 7 .9 4 3 0 .4 8 3 3 .0 2 3 5 .5 6 36.10 4 0 .6 4 43.16 4 5 .7 2 4 8 .2 6 5 0 .8 0 5 3 .3 4 5 5 .8 8 5 8 .4 2

SG700EX22

Abstract: SG700W22 SG700R22 SG700U22
Contextual Info: 80 - - 2 * S G 7 0 0 rR, O f - 3 U, •/'<. 0 200A. W, T - 4 5 E X ^ 2 2 4 1 3 0 0 V - 2 5 0 0 V □L 7T Ir r m S G 7 0 0 R 2 2 77- se 1 3 - 5 I B I A S G 7 0 0 U 2 2 S G 7 0 0 W 2 2 VjJÄM S G 7 0 0 E X 2 2 # 15 VöRM 1300 It q r m /h RMS) I { V d — V z V d r m , V d m = 2/ 3 V d r m ,

npn 200w

Abstract: 2N6688 BUX20A 140W 2N5320 2N5322 2N5323 2N5671 2N5672 BUX10A
Contextual Info: TCSK - TDSbfl?! 0005727 T17 5ûE D THOMSON/ DISTRIBUTOR Bipolar Power Transistors High-Speed Switching Continued V c E (S 3 t)-V h FE T y p e No. v C E O (*u s ) V VcEX(*u«) V 2N 5 3 2 3 2N 5 3 2 2 -7 5 * * -1 0 0 * -5 0 -7 5 90 90 120 125 125 140 120

SMF-2432SYC-RP-TR

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER 3 .1 0 REV. SMF-2432SYC-RP-TR [0 .1 2 2 ] — - 01,60 [0 0 ,0 6 3 ] r 2 .4 0 V 1,40 [0 ,0 5 5 ] _ \ ' / / / / / / . 0 ,3 5 [0,014] 0 0 .8 0 0 ,2 5 [ [ 0 ,0 1 0 ] ELECTRO-OPTICAL CHARACTERISTICS T A = 2 5 X PARAMETER J MIN

Contextual Info: ASP—17733—01—fv NOTE: P A R T S A R E TO BE BULK P AC KA G ED . 1 .4 0 0 + .0 1 0 [ 3 5 . 5 6 + . 2 5 ] — 7 P O SIT IO N S x .2 00 [5 .0 8 ] .100 [2 .5 4 ] REF .125 [3 .18 ] REF "V V V V V V H B H J\_ A_ A_ A_ _ A_ _ Al .2 50 [6 .3 5 ] REF .0 4 5 1.14] SQ REF

Contextual Info: 1 .0 1.1 1 .2 1 .3 1 .4 1.5 2 .0 2.1 2 .2 2 .3 2 .4 3 .0 3.1 3 .2 4 .0 4.1 PERFORMANCE FREQUENCY RANGE: D C -4 G H z VOLTAGE RATING: 5 0 0 V RMS sea level NOMINAL IMPEDANCE: 5 0 OHMS DWV: 1 5 0 0 V RMS @ 6 0 Hz (se a level) TEMPERATURE RANGE: - 6 5 ‘ C TO + 1 65*C

NLY4

Abstract: 1RF35
Contextual Info: ¡ 2 H A R R I S /R F 3 5 0 / 3 5 1 / 3 5 2 /3 5 3 IR F 3 5 0 R /3 5 1 R /3 5 2 R /3 5 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T O -20 4 A A • 1 3 A a n d 1 5 .0 A , 3 5 0 V - 4 0 0 V • r D S o n = ° - 3 f i a n d 0 . 4 f l

Contextual Info: 3 16 Modular Terminal Blocks with Fixing Flange or Snap-in Mounting Foot, Series 261 Side-entry 0 .0 8 - 2 . 5 m m 2 5 0 0 V /6 kV /3 O 24 A A W G 2 8 - 14 3 0 0 V, 15 A TO 3 0 0 / 6 0 0 V, 10/5 A « Term inal block w id th 6 mm / 0 .2 3 6 in J_^ 8 - 9 mm / 0 .3 3 in

Contextual Info: Potentiom eters VB 12L R o M lo ro l A n g li V 1 2LG 3 V B 1S L4 G 3-2 VB 16L43 V 1 flL 4 8 C 2 6 V B 161G 300± 5' 300±5" 300±5‘ 300±5“ 300±5* 300±5" 2 -2 5 m N -m 2 -2 5 m N m 3 -2 0 m N -m 3 - 2 5 m N •m 3 -3 0 m N m 3 -2 0 m N m (2 0 -2 5 5 g f cm )

EP105

Contextual Info: 1. Mechanical Dimensions: Schematic: 2. 3 °~ 3 3 V -5 5 V 200KHz 4 o2oBV@ 20mA 1 °- 2. Electrical Specfications: @25°C OCL: Pins 3 - 4 D G98 0 .0 2 6 x 0 .0 1 3 0 .0 5 0 4u i i 4 DC To □uz . W¥ ÏL Max O lO O K H z, 0.1 V S h o rt P 5 - 8 DC Res.: Pins 2 - 1 0 .1 1 5 O hm s Max