EPD-310-0-0
Abstract: 320nm
Contextual Info: EPD-310-0-0.3-C/D* UV-Photodiodes Wavelength range Type Technology Case UVB UV glass with filter SiC TO-5 Description High spectral sensitivity in the UVB range 290 nm - 330nm , low cost chip based on SiC 1,2 Environmental technology, analytical techniques,
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uvb sensor
Contextual Info: UVB - Sensor Head Rev 03/08 This optical sensor head is designed to measure irradiance in the UVB wavelength range. It is equipped with an inbuilt amplifier which allows irradiance measurement over An several analogous decades. voltage will be output, which is
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GUVB-S10GD
Abstract: AG32S
Contextual Info: Ultraviolet selective AlGaN based UV sensor GUVB-S10GD AG32S-SMD Features • UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible • Semiconductor material AlGaN • SMD package with quartz window
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uv sensor
Abstract: ultraviolet sensor SUN SENSOR uv photodiode
Contextual Info: Ultraviolet selective GaN based UV sensor GaN-UVA-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
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uv sensorultraviolet sensorsun sensoruv photodiode |
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SIC01S-HT
Abstract: silicon carbide UV photodiode
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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sic01s-htsilicon carbideuv photodiode |
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uv sensor
Abstract: ultraviolet sensor SUN SENSOR AG38S-SMD
Contextual Info: Ultraviolet selective GaN based UV sensor AG38S-SMD Features • Broadband UVA-UVB-UVC selective photodiode • Optimally suited for low-cost UV consumer applications • Intrinsicly unsensitive in the visible due to the wide-bandgap semiconductor material GaN
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ag38s-smduv sensorultraviolet sensorsun sensor |
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ultraviolet sensor
Abstract: AG28S uv sensor AG28S uvc photodiode
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
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ag28sultraviolet sensoruv sensor ag28suvc photodiode |
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SG01S-HT
Abstract: uv sensor silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S-HT Features • Operating Temperature up to 170°C • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness •
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SG01S-5
Abstract: silicon carbide SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor with large TO5 housing for broad incident angle SG01S-5 Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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uv photodiode
Abstract: uv sensor ultraviolet sensor datasheet AG28S uvb sensor uv sensor AG28S ultraviolet sensors AG38S-TO AG32S AG38S-SMD
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG28S Features • UVC selective photodiode • Optimally suited for detection and control of UVC radiation • Intrinsicly unsensitive in the UVA, UVB and in the visible due to the wide-bandgap semiconductor material AlGaN
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ag28sin1093ag38s-touv photodiode+7uv sensorultraviolet sensor datasheetuvb sensoruv sensor ag28sultraviolet sensorsag32sag38s-smd
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ultraviolet sensor
Abstract: TR15 uv sensor SG01S
Contextual Info: Ultraviolet selective SiC based UV sensor SG 01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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ultraviolet sensortr15uv sensorsg01s |
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SG01S
Abstract: uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S Features • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sg01suv sensorsilicon carbide |
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ultraviolet sensor
Abstract: silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01S-ISO Features • Two insulated pins • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness • Intrinsic visible blindness due to wide-bandgap semiconductor material
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ceramo paste
Abstract: uv sensor ultraviolet sensor CO Sensor
Contextual Info: Ultraviolet selective SiC based UV sensor UV_Water_1 Features • ¼ Stainless Steel Sensor Probe • compliance with IP65 • 15 bar water proof • Broad Band UVA-UVB-UVC Photodiode • Optimally suited for UVC high radiation control • Silicon Carbide based chip for extreme irradiation hardness
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ceramo pasteuv sensorultraviolet sensorco sensor |
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silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sg01l-5s280nms400nmsilicon carbide |
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uv photodiode SIC01L-18
Abstract: SIC01L-18 cree ultraviolet uv sensor
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sic01l-18s280nms400nmuv photodiode sic01l-18+2cree ultravioletuv sensor
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ultraviolet sensor
Abstract: uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01M Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sg01ms280nms400nmultraviolet sensor+2uv sensorsilicon carbide
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AG32S
Abstract: UVA photodiode
Contextual Info: Ultraviolet selective AlGaN based UV sensor AG32S Features • UVB & UVC selective photodiode • Optimally suited for sun-UV dosimetry • Intrinsicly unsensitive in the UVA and in the visible due to the wide-bandgap semiconductor material AlGaN • TO-18 metal package with 0,076 mm2 active chip area
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ag32suva photodiode |
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uv flame sensor
Abstract: ultraviolet sensor SG01 FLAME SENSOR UV SG01M uv sensor silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01M – Lens Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
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sg01ms280nms400nmflammenerkennung459+6uv flame sensorultraviolet sensorsg01flame sensor uvuv sensorsilicon carbide
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uv flame sensor
Abstract: FLAME SENSOR UV ultraviolet sensor uv photodiode sic01m ultraviolet sensor flame cree Sic uv sensor Ultraviolet SIC01M
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01M – LENS Features • Broad band UVA-UVB-UVC photodiode for weak and directed radiation • Perfectly suited for flame sensing • Silicon Carbide based chip for extreme low noise and dark current • Chip dimensions of 0.5 x 0.5 mm2 with 0.22 mm2 active area
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sic01ms280nms400nmuv flame sensor+7flame sensor uvultraviolet sensoruv photodiode sic01multraviolet sensor flamecree sicuv sensorultraviolet
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ultraviolet sensor
Abstract: silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SG01L-18 Features • Broad band UVA-UVB-UVC photodiode in TO18 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sg01l-18s280nms400nmultraviolet sensor+1silicon carbide
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uv sensor
Abstract: SIC01L-5 SUN SENSOR silicon carbide
Contextual Info: Ultraviolet selective SiC based UV sensor SIC01L-5 Features • Broad band UVA-UVB-UVC photodiode in TO5 metal package • Silicon Carbide based chip for extreme radiation hardness • Chip dimensions of 1 x 1 mm2 with 0.96 mm2 active area • Intrinsic visible blindness due to wide-bandgap semiconductor material
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sic01l-5s280nms400nmuv sensor+2sun sensorsilicon carbide
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EPD-310-0-0
Abstract: UV 310 nm
Contextual Info: Photodiode EPD-310-0-0.3-1 11.04.2007 Preliminary rev. 02/07 Wavelength Type Technology Case UV-B clear UV-glass + filters SiC TO-39 Description 8,33 Selective photodiode with high spectral sensitivity in the UVB range 290 nm - 330 nm , mounted in hermetically sealed TO-39 package with clear
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epd-310-0-0d-12555uv 310 nm |
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GUVB-S11SD
Contextual Info: GUVB-S11SD TECHNICAL DATA UV-B Sensor Features • • • • • Applications • • Aluminium Gallium Nitride Based Material Schottky-type Photodiode Photovoltaic Mode Operation Good Visible Blindness High Responsivity & Low Dark Current UV Index Monitoring
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