UV LIGHT PHOTO DETECTOR Search Results

410nm

Contextual Info: Tops 1 Power Violet LED OSV5XAT1C1E •Features Dimension Highest Luminous Flux Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications Money Detector ● UV-Curing ● Sensor light ● Photo-catalyst ● Other Lighting

led xeon

Abstract: UV led 405 nm peak wavelength
Contextual Info: Xeon 1 Power Violet LED OSV5XME1C1E •Features ■Outline Highest Luminous Flux ● Super Energy Efficiency ● Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications ● Photo-catalyst ● Other Lighting 3.5 Sensor light

L11938

Abstract: s11850
Contextual Info: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS

Hamamatsu S6337

Abstract: S1337-1010BQ S6337-01 SE-171 uv light PHOTO detector uv PHOTO detector
Contextual Info: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.

Contextual Info: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.

sensor BPW34 application note

Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,

C9750

Abstract: C10990 S11059-78HT S11154-01CT S10604
Contextual Info: NEWS 01 2009 SYSTEMS PRODUCTS PAGE 68 ORCA camera line-up SOLID STATE PRODUCTS Mini-spectrometer C10988MA PAGE 33 ELECTRON TUBE PRODUCTS Lightningcure LC-L2 PAGE 50 SYSTEMS PRODUCTS New Streakscope C10627 PAGE 59 Highlights SOLID STATE PRODUCTS ELECTRON TUBE PRODUCTS

spot light size photodiode

Abstract: S8382
Contextual Info: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

C10500

Abstract: linear CCD 512 TDI cmos image sensor
Contextual Info: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide

FND-100Q

Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Contextual Info: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.

Contextual Info: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning

Light Detector laser

Abstract: short distance measurement ir infrared diode
Contextual Info: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that

L9657

Abstract: S10604
Contextual Info: 2007 Vol.2 E x h i b i t i o n s NEWS 2007 Vol.2 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / November Vision 2007 Stuttgart / Germany UKAEA (Oxford / UK) Productronica 2007 (Munich / Germany) 35th Scottish Microscopy Symposium

Photodiodes

Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Contextual Info: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera

S10111

Contextual Info: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speciÝcally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area

S10114-1024Q

Contextual Info: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area

PIN-040A

Abstract: osd15-5t OSD5.8-7Q OSD5-5T PIN-020A PIN-44DI OSD35-7Q SPOT-15-YAG OSD15-0 bpx65r
Contextual Info: YAG Series Nd:YAG Optimized Photodetectors The YAG Series of photo detectors are optimized for high response at 1060 nm, the YAG laser light wavelength, and low capacitance, for high speed operation and low noise. These detectors can be used for sensing low light intensities, such as the light reflected from objects illuminated by

Contextual Info: Technology introduction CHAPTER 13 1 Semiconductor process technology 1-1 Silicon process technology 1-2 Compound semiconductor process technology 2 Assembly technology 2-1 2-2 2-3 2-4 2-5 Packages for diverse needs Flip chip bonding Dicing Module products

uv detector

Abstract: uv sensors uv PHOTO detector 340nm
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode

long range metal detector

Abstract: InSb spectral response uv light PHOTO detector HSTTM metal detector diagram Dewar metal detector XP1200 metal detector diagram PI P5968-060
Contextual Info: InAs/lnSb Photovoltaic Detectors Spectral Response Range: InAs 1 to 3.1 urn. InSb 1 to 5.5 urn Photovoltaic detectors with high-speed response and low noise InAs detectors cover a w avelength ran g e equivalent to that of PbS detectors, and th at of PbSe d etec to rs is covered by InSb detectors.

near IR photodiodes

Abstract: S8745-01 S8558
Contextual Info: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5

P9696

Abstract: DETECTOR FLAME P3207-07 C1103-04 C3757-02 P4245 P4639 A3179 A3179-01 P9696-02
Contextual Info: PbSe photoconductive detectors P9696 series P3207-07 Infrared detectors with fast response and high sensitivity in 5 Njm wavelength band Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and

Contextual Info: PbSe photoconductive detectors P9696 series P3207-07 Infrared detectors with fast response and high sensitivity in 5 Njm wavelength band Compared to other detectors used in the same wavelength regions, PbSe photoconductive detectors have faster response and

Contextual Info: Two-color detectors K1713/K3413-01, -002 Wide spectral response range from UV through IR The K1713/K3413-01, -002 have a bi-level structure in which an infrared transmitting Si photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR.