UTC 801 Search Results
UTC 801 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| UTC801 | Unisonic Technologies | 3/4 STRINGS Xmas LILGHT CONTROL | Original | 47KB | 1 | ||
| UTC801 | Unisonic Technologies | 3/4 Strings Xmas Light Control | Original | 41.73KB | 2 |
UTC 801 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
application of sequential circuit
Abstract: UTC 801 sequential IC sequential
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Original |
qw-r120-001application of sequential circuitutc 801sequential+1 | |
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Contextual Info: UTC 801/802 INTEGRATED CIRCUIT 3/4 STRINGS Xmas LIGHT CONTROL FEATURES *Adjustable flash rate. *Programmable 2/3/4 strings of bulbs. *UTC 801 sequential mode for about 57 sec. 4 light string flash for about 3 sec. according to normal fosc. then back to sequential again. |
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qw-r120-001 | |
Light Controller
Abstract: UTC801
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Original |
qw-r120-001light controllerutc801 | |
2SC2235
Abstract: transistor 2sC2235 2sc223 2SC2235L 2SA965 UTC 2SC2235L
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Original |
2sc22352sa9652sc2235l2sc2235g+9 | |
sot-23 2LContextual Info: UTC MMBT5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =350mW *High current gain 2 1 APPLICATIONS 3 *Telephone Switching Circuit *Amplifier MARKING SOT-23 |
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mmbt5401-150v350mwot-23+2 | |
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Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2n5401-150v625mwqw-r201-001 | |
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Contextual Info: UTC 2SC2235 NPN EPITAXIAL SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES *Complimentary to 2SA965 1 TO-92NL 1:EMITTER 2:COLLECTOR 3. BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2sc22352sa965o-92nlqw-r211-012 | |
2SC2235
Abstract: 2sc2235 datasheet transistor 2sC2235 2SA965
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2sc22352sa965o-92nlqw-r211-012+2 | |
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Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2n5401-150v625mw | |
2N5401Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE |
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2n5401-150v625mwqw-r201-001 | |
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Contextual Info: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER Collector-Base Voltage |
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2sd7182sb688qw-r214-003 | |
2sC2235Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2235 AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS NPN SILICON TRANSISTOR 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free |
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2sc22352sa965o-92nl2sc2235l-x-t92-b+6 | |
marking G1 sot23 UTCContextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR |
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mmbt5551ot-23qw-r206-010marking g1 sot23 utc | |
transistor 2sd718
Abstract: 2SD718 2sd718 transistor 2SD718 o 2sd718 amplifier transistor 2SB688 2SB688 80 V NPN epitaxial silicon transistor applications of single stage common emitter
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2sd7182sb688qw-r214-003transistor 2sd718+6 | |
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Contextual Info: UTC 2SD718 NPN EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES *Recommended for 45~50W Audio Frequency *Amplifier Output Stage. *Complementary to 2SB688. 1 TO-3P 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER |
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2sd7182sb688qw-r214-003 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. |
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mmbt5551mmbt5551l-x-ae3-rmmbt5551g-x-ae3-rot-23+1 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT5551 NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR 3 DESCRIPTION The UTC MMBT5551 is a high voltage fast-switching NPN power transistor. It is characterized with high breakdown voltage, high current gain and high switching speed. |
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mmbt5551ot-23o-236mmbt5551g-x-ae3-r+1 | |
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Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2n5551 | |
utc 3845 D
Abstract: divide-by-32768 GP2021 IG GQ1R CH9E 854S utc 3845 GPS Receiver RF Front End 44-LEAD
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gp202112-channelds407732-bit+13 | |
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Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C , unless otherwise specified |
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2n5551qw-r201-002 | |
2N5551Contextual Info: UTC 2N5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 1 APPLICATIONS *Telephone switching circuit *Amplifier TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C ,unless otherwise specified |
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2n5551qw-r201-002 | |
PA3112
Abstract: MSOP-10
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pa3112150mwmsop-10-150mw+1 | |
MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
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Original |
pa6112150mwmsop-10pa6112l+4 | |
MSOP-10
Abstract: PA6112 PA6112L-SM2-R PA6112-SM2-R PA6112-SM2-T
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pa6112150mwmsop-10pa6112l+4 | |