UTC 2025 Search Results

2025D

Abstract: resistor 10 k ohm 1w TEA Series
Contextual Info: UTC TEA2025D LINEAR INTEGRATED CIRCUIT STEREO AUDIO AMPLIFIER DESCRIPTION The UTC TEA2025D is a monolithic integrated circuit, In 20 sop, intended for use as dual or bridge power audio amplifier portable radio cassette players. FEATURES *Dual or bridge connection modes.

PCR406

Abstract: transistor pcr406 PCR406 equivalent SCR PCR406 equivalent pcr406 PCR406 Application Notes PCR406-5 PCR4065 B/equivalent pcr406 UTCPCR406
Contextual Info: UTC PCR406 SCR DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS

PCR406

Abstract: transistor pcr406 PCR406 equivalent PCR406-5 PCR4065 SCR PCR406 equivalent pcr406 PCR406-6 SCR PNPN UTC PCR406
Contextual Info: UTC PCR406 SCR DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS PARAMETERS

Avantek* UTC 524

Abstract: Avantek* UTO Avantek UTC5 Avantek UTC 518 avantek UTO 511 Avantek* UTC 2025 AVANTEK utc10 UTC572 Avantek* UTC-1023 Avantek UTC 519
Contextual Info: W ti3 % H E W L E T T W L'fiM P A C K A R D Avantek Products IF/RF Cascadable Amplifiers Selection Guide UTO Series UTC Series PPA Series Description HP UTO/UTC/PPA cascadable amplifiers are offered in TO-8 packages, TC-1 connectorized cases, and surface-m ount

utc 2025

Abstract: UTC 225 Avantek* UTC 2025 UTC2025 Avantek uto amp
Contextual Info: Whnl HEWLETT mílfíMPACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ • Low Noise: 3.0 dB (Typ)

UTC2025

Abstract: AVANTEK uto Avantek uto amp
Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000␣MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high

Contextual Info: Whpì H EW LETT mL'EM PACKARD Avantek Products Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF ampli­

A1512

Abstract: transistor a1640
Contextual Info: Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high output power and low noise figure

UTC2025

Abstract: TELEDYNE 1413 RF TRANSISTOR 10-15 GHZ 11978
Contextual Info: Thin-Film Cascadable Amplifier 100 to 2000 MHz Technical Data UTO/UTC 2025 Series Features Description Pin Configuration • Frequency Range: 100 to 2000 MHz The 2025 Series is a wideband, high-power GaAs FET RF amplifier. The combination of high output power and low noise figure

PCR4065

Abstract: pcr406 SCR PCR406
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PCR406 SCR SCRS  DESCRIPTION The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92  ORDERING INFORMATION

UTC 2025 stereo audio amplifier

Abstract: TEA 2025 L ic tea 2025 UTC 2025 TEA 2025 equivalent 100uf 9V capacitor stereo audio amplifier 4 w 4 ohm using utc 2025 UTC 2025 datasheet TEA2025 stereo amplifier 2025
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD TEA2025D LINEAR INTEGRATED CIRCUIT STEREO AUDIO AMPLIFIER DESCRIPTION The UTC TEA2025D is a monolithic integrated circuit that intended for use as dual or bridge power audio amplifier portable radio cassette players. SOP-20 FEATURES

Contextual Info: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE APPLICATIONS * Electronic transformers, power swiching circuit INTERNAL SCHEMATIC DIAGRAM C 2 1 B (3) TO-92 E (1) 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS

UTC2025

Abstract: UTC 2025 11978
Contextual Info: O a v a n tek UTO/UTC 2025 Series Thin-Film Cascadable Amplifier 100 to 2000 MHz FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ • Low Noise: 3.0 dB (Typ) • High Power: +27 dBm (Typ) • Temperature Compensated

PCR406

Abstract: PCR4065
Contextual Info: UNISONICTECHNOLOGIESCO., LTD PCR406 SCR SCRS ̈ DESCRI PT I ON The UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 Lead-free: PCR406L Halogen-free:PCR406G

MCR101

Abstract: MCR101-4 MCR101-6 MCR101-8 scr 20a SCR 20A 600V SCR sensitive gate
Contextual Info: UTC MCR101 SCR SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS DESCRIPTION PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection

MJE13001

Abstract: MJE-13001 transistor mje13001 MJE13001 equivalent all MJE13001 equivalent transistors UTC 2025 B MJe13001 TRANSISTOR
Contextual Info: UTC MJE13001 NPN EPITAXIAL SILICON TRANSISTOR FEATURES * Collector-Base Voltage: V BR CBO=600V * Collector Current: IC=0.2A 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic Pc Tj TSTG 600 400 7

MJE13001

Contextual Info: UTC MJE13001 NPN EPITAXIAL SILICON TRANSISTOR FEATURES * Collector-Base Voltage: V BR CBO=600V * Collector Current: IC=0.2A 1 TO-92 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING UNIT VCBO VCEO VEBO Ic Pc Tj TSTG 600 400 7

Contextual Info: UTC XL/ML1225 SCR DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

XL1225

Abstract: ML1225 XL1225 equivalent SCR PNPN XL1225 transistor
Contextual Info: UTC XL/ML1225 SCR DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 1 TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

XL1225

Abstract: XL1225 equivalent SCR PNPN XL1225 TO-92 ML1225 scr SOT-23
Contextual Info: UTC XL/ML1225 SCR SCRs DESCRIPTION The XL1225/ML1225 silicon controlled rectifiers are high performance planner diffused PNPN devices. These parts are intended for low cost high volume applications. 3 1 2 SOT-23 1: GATE 2: ANODE 3: CATHODE ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified

UTC2025

Abstract: UTC 2025 uln 2800 data Avantek* UTO AVANTEK uto Avantek* UTC 2025 UTO 2025 AVANTEK utc UTC 2025 B MLPI
Contextual Info: MME ì> m u m ib b O a v a n tek 00000=13 1 B A V A U T O /U T C 2025 S eries T h in -F ilm C a s c a d a b le A m p lifie r 100 to 2000 M H z • • AVANTEK INC FEATURES APPLICATIONS • Frequency Range: 100 to 2000 MHz • High Dynamic Range • Medium Gain: 11.0 dB Typ

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B

mje13001

Abstract: MJE-13001 TRANSISTOR 2025 MJe13001 TRANSISTOR npn 600v to92 transistor mje13001 npn transistor 400V
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ 1 FEATURES SOT-89 * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A 1 TO-92 „ ORDERING INFORMATION Ordering Number Pin Assignment Package Packing

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B