UT4446G Search Results
UT4446G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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UT4446Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4446 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4446 uses UTC’s advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or |
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UT4446 UT4446 UT4446L UT4446G UT4446-S08-R UT4446-S08-T UT4446L-S08-R UT4446L-S08-T QW-R502-251 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4446 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION SOP-8 The UT4446 uses UTC’s advanced trench technology to provide excellent R DS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or |
Original |
UT4446 UT4446 UT4446L-S08-R UT4446L-S08-T UT4446L-P08-R UT4446G-S08-R UT4446G-S08-T UT4446G-P08-R QW-R502-251. | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4446-H Preliminary Power MOSFET 15A, 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4446-H uses UTC’s advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or |
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UT4446-H UT4446-H UT4446G-S08-R QW-R209-069 | |
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Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT4446 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE DESCRI PT I ON SOP-8 The UT4446 uses UTC’s advanced trench technology to provide excellent R DS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or |
Original |
UT4446 UT4446 UT4446L-S08-R UT4446L-S08-T UT4446L-P08-R UT4446G-S08-R UT4446G-S08-Tt QW-R502-251. |