ut3418 Datasheets

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Catalog Datasheet	MFG & Type	PDF	Document Tags
2009 - diode marking 226 Abstract: diode BY 226 all diodes ratings UT3418L UT3418 Text: Lead-free: UT3418L Halogen-free: UT3418G SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Normal UT3418-AE3-R Ordering Number Lead Free Plating UT3418L-AE3-R Halogen Free UT3418G-AE3-R , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , QW-R502-226.B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified	Original	PDF	UT3418 UT3418 UT3418L UT3418G UT3418-AE3-R UT3418L-AE3-R UT3418G-AE3-R QW-R502-226 diode marking 226 diode BY 226 all diodes ratings UT3418L
2015 - Not Available Abstract: No abstract text available Text: INFORMATION Ordering Number Note: ï® UT3418G-AE3-R Pin Assignment: G: Gate D: Drain Package , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ï® DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON , www.unisonic.com.tw Copyright Â© 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.E UT3418 ï® Power , of 3 QW-R502-226.E UT3418 ï® Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current	Original	PDF	UT3418 UT3418 UT3418G-AE3-R OT-23 QW-R502-226
2008 - diode BY 226 Abstract: diode marking 226 Text: specified *Pb-free plating product number: UT3418L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT3418-AE3-R UT3418L-AE3-R Package SOT-23 Pin , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , Copyright Â© 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-226.A UT3418 Power MOSFET	Original	PDF	UT3418 UT3418 UT3418L UT3418-AE3-R UT3418L-AE3-R OT-23 QW-R502-226 diode BY 226 diode marking 226
2009 - Not Available Abstract: No abstract text available Text: UT3418L-AE3-R UT3418G-AE3-R Ì Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel , UNISO TE NIC CHNO G SCO LTD LO IE ., UT3418 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR Ì DESCRI PT I ON The UT3418 uses advanced trench , Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 Ì Power MOSFET ABSOLU T E M AX I , 15 10.2 3.8 2 of 3 QW-R502-226.D UT3418 Ì Power MOSFET T Y PI CAL CH ARACT ERI ST	Original	PDF	UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R QW-R502-226
2009 - diode marking 226 Abstract: diode BY 226 Text: UT3418L-AE3-R UT3418G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , www.unisonic.com.tw MIN 15 10.2 3.8 2 of 3 QW-R502-226.D UT3418 Power MOSFET TYPICAL	Original	PDF	UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R OT-23 QW-R502-226 diode marking 226 diode BY 226