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    ut3418 Datasheets

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    2009 - diode marking 226

    Abstract: diode BY 226 all diodes ratings UT3418L UT3418
    Text: Lead-free: UT3418L Halogen-free: UT3418G SYMBOL 3.Drain 2.Gate 1.Source ORDERING INFORMATION Normal UT3418-AE3-R Ordering Number Lead Free Plating UT3418L-AE3-R Halogen Free UT3418G-AE3-R , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , QW-R502-226.B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified


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    PDF UT3418 UT3418 UT3418L UT3418G UT3418-AE3-R UT3418L-AE3-R UT3418G-AE3-R QW-R502-226 diode marking 226 diode BY 226 all diodes ratings UT3418L

    2015 - Not Available

    Abstract: No abstract text available
    Text: INFORMATION Ordering Number Note:  UT3418G-AE3-R Pin Assignment: G: Gate D: Drain Package , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON , www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.E UT3418  Power , of 3 QW-R502-226.E UT3418  Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current


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    PDF UT3418 UT3418 UT3418G-AE3-R OT-23 QW-R502-226

    2008 - diode BY 226

    Abstract: diode marking 226
    Text: specified *Pb-free plating product number: UT3418L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating UT3418-AE3-R UT3418L-AE3-R Package SOT-23 Pin , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-226.A UT3418 Power MOSFET


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    PDF UT3418 UT3418 UT3418L UT3418-AE3-R UT3418L-AE3-R OT-23 QW-R502-226 diode BY 226 diode marking 226

    2009 - Not Available

    Abstract: No abstract text available
    Text: UT3418L-AE3-R UT3418G-AE3-R ̈ Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel , UNISO TE NIC CHNO G SCO LTD LO IE ., UT3418 Power MOSFET N -CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT3418 uses advanced trench , Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 ̈ Power MOSFET ABSOLU T E M AX I , 15 10.2 3.8 2 of 3 QW-R502-226.D UT3418 ̈ Power MOSFET T Y PI CAL CH ARACT ERI ST


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    PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R QW-R502-226

    2009 - diode marking 226

    Abstract: diode BY 226
    Text: UT3418L-AE3-R UT3418G-AE3-R Package SOT-23 Pin Assignment 1 2 3 S G D Packing Tape Reel , UNISONIC TECHNOLOGIES CO., LTD UT3418 Power MOSFET N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT3418 uses advanced trench technology to provide excellent RDS(ON), low gate , Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , www.unisonic.com.tw MIN 15 10.2 3.8 2 of 3 QW-R502-226.D UT3418 Power MOSFET TYPICAL


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    PDF UT3418 UT3418 UT3418L-AE3-R UT3418G-AE3-R OT-23 QW-R502-226 diode marking 226 diode BY 226
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