UT30P03 Search Results
UT30P03 Datasheets Context Search
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 40mΩ @VGS =-10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified 1 SYMBOL 2.Drain TO-252 |
Original |
UT30P03 O-252 UT30P03L-TN3-R UT30P03G-TN3-R QW-R502-335 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON < 40mΩ @ VGS=-10V, ID =-10A RDS(ON) < 60mΩ @ VGS=-4.5V, ID =-10A * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified |
Original |
UT30P03 O-252 UT30P03L-TN3-T UT30P03L-TN3-R UT30P03G-TN3-T UT30P03G-TN3-R QW-R502-335 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT30P03 Preliminary Power MOSFET P-CHANNEL ENHANCEMENT MODE FEATURES * RDS ON = 40mΩ @VGS =-10 V * Low Capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified * Halogen Free 1 SYMBOL |
Original |
UT30P03 O-252 UT30P03G-TN3-R QW-R502-335 |