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    UT2321G Search Results

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    Allied Components International UT2321G-AE3-R

    3.8 A, 20 V, 0.055 OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UT2321G-AE3-R 2,650
    • 1 $0.27
    • 10 $0.27
    • 100 $0.27
    • 1000 $0.14
    • 10000 $0.12
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    Unisonic Technologies Co Ltd UT2321G-AE3-R

    3.8 A, 20 V, 0.055 OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UT2321G-AE3-R 12
    • 1 $0.27
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    • 100 $0.27
    • 1000 $0.27
    • 10000 $0.27
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    UT2321G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT2321 UT2321 UT2321G-AE3-R OT-23 QW-R502-249 PDF

    Contextual Info: UNISONICTECHNOLOGIESCO., LTD UT2321 Power MOSFET P-CH AN N EL EN H AN CEM EN T M ODE FI ELD EFFECT T RAN SI ST OR ̈ DESCRI PT I ON The UT2321 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT2321 UT2321 UT2321L-AE3-R UT2321G-AE3-R OT-23 QW-R502-249 PDF

    marking231l

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM


    Original     		UT2321 UT2321 UT2321L-AE3-R UT2321G-AE3-R OT-23 QW-R502-249 marking231l PDF

    UT2321

    Abstract: UT2321G
    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT2321 Power MOSFET P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION The UT2321 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in


    Original     		UT2321 UT2321 1111UT2321L UT2321G UT2321-AE3-R UT2321L-AE3-R UT2321G-AE3-R QW-R502-249 UT2321G PDF