US PATENT Search Results

4081

Abstract: JANS1N6638US 1N6638US 1N 457 equivalent
Contextual Info: 1N6638/US thru 1N6642/US Standard SWITCHING / SIGNAL DIODES TECHNICAL DATA AVAILABLE AS DATA SHEET 4081, REV D JANS JAN EQUIVALENT* SJ66XX/US* SX66XX/US* SV66XX/US* SS66XX/US*

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

MILPRF19500/578

Abstract: 1N6641
Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JAN TX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6641

Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

1N6640 equivalent

Abstract: 1N6640 1N6641
Contextual Info: Switching Diodes 1N6638 Series 1N6638, 1N6639, 1N6640, 1N6641, 1N6642, 1N6643, 1N6638U & US, 1N6639U & US, 1N6640U & US, 1N6641U & US 1N6642U & US, 1N6643U & US Features • Available in JAN, JANS, JANTX, JANTXV per MIL-PRF‐19500/578 & /609 • Switching Diodes

JANtx 1N5415

Abstract: 1N5416 1N5419 1N5417 JANS 1N5415 1N5417 1N5418 1N5420 1N5416 JANTX 1N5419US
Contextual Info: 1N5415,US 1N5416,US 1N5417,US 1N5418,US 1N5419,US 1N5420,US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 125, REV D JAN JANTX JANTXV SJ SX SV HIGH CURRENT AXIAL LEAD/SURFACE MOUNT RECTIFIERS • Hermetic, non-cavity glass package • Metallurgically bonded

1N6138

Abstract: 1n6160a
Contextual Info: 1N6102A/US thru 1N6173A/US Standard HERMETIC BI-DIRETIONAL TRANSIENT SUPPRESSOR SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5072, REV. A.2 AVAILABLE AS 1N61xxA/US JAN EQUIVALENT: SJ61xxA/US* SV61xxA/US* SX61xxA/US* DESCRIPTION: This voidless hermetically sealed bidirectional transient voltage suppressor diode is targeted for

SS5550

Abstract: ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554
Contextual Info: SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5108, REV - HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

5615

Abstract: 1N5615
Contextual Info: 1N5615/US,1N5617/US, 1N5619/US,1N5621/US1N5623/US Standard FAST RECOVERY RECTIFIERS SENSITRON _ SEMICONDUCTOR TECHNICAL DATA AV AI L AB L E AS DATA SHEET 5081, REV. A.3

JANTXV1N5811US

Abstract: JANS1N5811US JANTX1N5811US JANS1N5811 SS5811US 1N5811US JANS sensitron jan1n58 1N5809 equivalent jan1n5811 1N5809US
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA A VAILABLE AS DATA SHEET 127, REV. H.4 JAN JANTX JANTXV JAN S JAN EQUIVALENT: SJ58xx/US*

5614

Abstract: 1N5620 1N5614 1N5616 1N5618 1N5622 1n5620us Melf General Purpose Rectifier
Contextual Info: 1N5614/US 1N5616/US 1N5618/US 1N5620/US 1N5622/US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 116, REV. C SS HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT 2000 NS GLASS RECTIFIER.

1N5550 JANTX

Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

Contextual Info: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging

Melf General Purpose Rectifier

Abstract: 1N5614 JANTX
Contextual Info: 1N5614/US 1N5616/US 1N5618/US 1N5620/US 1N5622/US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 874, REV. C.1 JAN JANTX JANTXV JANS SJ SX SV HERMETIC AXIAL LEAD / MELF GENERAL PURPOSE RECTIFIER DESCRIPTION: A 200/400/600/800/1000 VOLT, 1.0 AMP, AXIAL LEAD/SURFACE MOUNT

744 202

Abstract: IHLP-2525CZ-01 INDUCTOR 100 uh DIP Mil-std
Contextual Info: IHLP-2525CZ-01 Vishay Dale Low Profile, High Current Inductor FEATURES • • • • • • Low profile. High current. Low loss up to 5 MHz. Low DCR. Less than 10% L drop at full rated current. US patent numbers US 6,198,375 B1 and US 6,204,744 B1 received.

1N4460

Abstract: zener JANTX 1N4467 1N4474 1N4475 1N4477 1N4471 1N4469 1N4467 1N4460US
Contextual Info: 1N4460/US, 1N4461/US, 1N4467/US thru 1N4496/US Standard ZENER DIODES SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5080, Rev B.3 AVAILABLE AS 1N JAN, JANTX, JANTXV JANS JAN EQUIVALENT * SJ44XX*, SX44XX*, SV44XX* SS44XX* Zener 1.5W DIODE • Ultra-low reverse leakage current

Contextual Info: SS5807 / US SS5809 / US SS5811 / US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4971, REV - HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS RATING Inverse Voltage

JANTX 1N5811

Abstract: 1N5807 1N5809 1N5811 melf-b 1N5811 power rating JAN 1N5811
Contextual Info: JAN JANTX JANTXV SENSITRON SEMICONDUCTOR 1N5807 / US 1N5809 / US 1N5811 / US TECHNICAL DATA DATA SHEET 127, REV F HIGH EFFICIENTCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS

1N5807

Abstract: 1N5809 1N5811 JANTX 1N5811
Contextual Info: 1N5807 / US 1N5809 / US 1N5811 / US SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 127, REV G JAN JANTX JANTXV SJ SX SV HIGH EFFICIENCY AXIAL LEAD RECTIFIERS DESCRIPTION: 50 / 100 / 150 VOLT, 3.0 AMP, 30 NANOSECOND RECTIFIER MAX. RATINGS / ELECTRICAL CHARACTERISTICS

5807

Abstract: 1N5807
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.5 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

1N5811US JANS sensitron

Abstract: SS5811US 1N5811 jan1n5811 1N5811 power rating
Contextual Info: 1N5807/US, 1N5809/US, 1N5811/US Standard ULTRAFAST RECOVERY RECTIFIERS TECHNICAL DATA DATA SHEET 127, REV. H.4 AV AI L AB L E AS 1 N , J AN , J AN T X , J ANT XV JANS JAN EQUIVALENT *

Contextual Info: Ordering number : ENA0644 LA72670BM Monolithic Linear IC US multiplex modulation for VCR HiFi Sound Signal Processor http://onsemi.com Overview The LA72670BM is a HiFi sound signal processor with a built-in US multiplex modulation for VCR. Functions • US multiplex modulation

Contextual Info: SENSITRON SEMICONDUCTOR SS6626/US thru SS6631/US TECHNICAL DATA DATA SHEET 5078, REV. – Ultrafast Recovery Rectifier • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -65 C to +175 TYPE NUMBER SS6626/US