UNITED DETECTOR TECHNOLOGY Search Results

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector silicon UNITED DETECTOR C 2458 A2V-16 United Silicon
Contextual Info: 84D 00964 03 10987 UNITED DETECTOR UNITE» DETECTOR AM D T-41-55 »F§'J31D‘lfi7 0D0Dcib4 5 United Detector Technology A Division of Technology’, Inc. f ILC 12525 Chadron Avenue • Hawthorne, California 90250 • 213 978-0516 Telex Number 18-2458 Fax Number (213) 644-1727

301B-AC

Abstract: United Detector Technology United Detector Technology Photodiodes FIL-C10D udt sc 10 United Detector Technology, silicon photodiode UDT 260 C10D FIL-100C fil 3c
Contextual Info: 77C 00841 d ~ r~ 77 DË T | ' m O T à ? 9310987 UNITED DETECTOR UNIT E» DETECTOR SILICON PHOTODIODES dOGOflm fl FIL* PHOTOCONDUCTIVE DEVICES PC \ : \ Parameter & Unit Active Surface Area . Typ. Junction •; ; Capacitance-C j. ' Typical . Responsivity-R\

United Detector Technology photodiode

Abstract: United Detector Technology circuits metal detector HAMAMATSU P11120-901 KIRD1110E01 SE-171 co2 detector high speed photodiode detector circuit
Contextual Info: InAsSb photodiode P11120-901 Infrared detector in the 5 m spectral band, with high sensitivity and high reliability The P11120-901 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high

Contextual Info: InAsSb photodiode P11120-901 Infrared detector in the 5 m spectral band, with high sensitivity and high reliability The P11120-901 is an infrared detector that provides high sensitivity in the 5 m spectral band due to our unique crystal growth technology. The InAsSb photodiode used in the detector has a planar structure that ensures high-speed response and high

Contextual Info: InAsSb photovoltaic detector P12691-201 High-speed response and high sensitivity in the 8 m spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required The P12691-201 is an infrared detector that provides high sensitivity in the 8 μm spectral band by employing our unique crystal growth technology and back-illuminated structure and by integrating a lens. The InAsSb photovoltaic detector has a PN

CyOptics DFB chip

Contextual Info: Laser & detector chip & TO-can products Product Brief Description Features & Advantages: Avago Technologies supplies Indium Phosphide chips and TO-cans as technology enablers for TOSA/ ROSA, large form factor component and module manufacturers. Avago has been a long-time industry leader in the design,

United Detector Technology

Abstract: connector apc
Contextual Info: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides

Contextual Info: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides

United Detector Technology Photodiodes

Abstract: UDT-500D 555D United Detector Technology udt 500d photodetector UDT-020D uv photodiode for 254nm UDT-555d 500D photodetectors UDT-450
Contextual Info: UNITGD DETECTOR TECHNOLOGY A Division of ILC Technology, Inc. U N I T E » D E T E C T O R IDE D ' T 3 1 EHfl7 • □ □ □ ! □ ? ? S | r - w PHOTOPS" Hybrid - ù > '7 Photodetector/Amplifiers APPLICATIONS LOW-NOISE DETECTORS. ■ ■ ■ ■ ■ ■

R5150-10

Contextual Info: ELECTRON PRELIMINARY DATA FEB. 1998 MULTIPLIER R5150-10 The R5150-10 is a new family of Hamamatsu ion detector. Thanks to Hamamatsu unique electron trajectory simulation technology, it delivers high gain, fast response and wide dynamic range. A newly developed secondary emitting surface

windmill design

Abstract: R5150-30 R5150-80
Contextual Info: ELECTRON MULTIPLIER PRELIMINARY DATA FEB. 1998 R5150-80 The R5150-80 is a new family of ion detector developed by means of Hamamatsu unique electron trajectory simulation technology. The R5150-80 has excellent noise elimination effects and an off-axis electrode structure and conversion type

Contextual Info: MGA-43728 2.62–2.69 GHz Linear Power Amplifier Module Product Brief Description Features The Avago MGA-43728 is a fully matched, highly linear power amplifier PA designed for use in the 2.62-2.69 GHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain

Contextual Info: MGA-43828 925–960 MHz Linear Power Amplifier Module Product Brief Description Features The Avago MGA-43828 is a fully matched, highly linear power amplifier PA designed for use in the 925-960 MHz band. Based on Avago’s proprietary 0.25um GaAs EpHEMT technology, the device features high linearity, gain

TDA7576

Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet  production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4  @ 24 V, 1 kHz; 10 %

TDA7576B

Abstract: TDA7576 mosfet power amplifier
Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %

TDA7576B

Abstract: TDA7576
Contextual Info: TDA7576B Dual bridge MOSFET power amplifier for 24 V systems Datasheet − production data Features • Multipower BCD technology ■ 24 V battery operation ■ MOSFET output power stage ■ High output power capability – 2 x 20 W/4 Ω @ 24 V, 1 kHz; 10 %

tde3247dp

Abstract: ultrasonic proximity detector TDE3247D TDE1798DP VN808 tde1767dp L6374FP TDE1708 tde1707b VIPower
Contextual Info: Intelligent power switches VIPower technology PENTAWATT Intelligent power switches I.P.S. PPAK PowerSO-10 VN808/CM/SR Octal HSD SO-8 SO-20 Reference guide 160mΩ VN330SP Quad HSD 200mΩ VN340SP Quad HSD 200m VNQ860 Quad HSD 270mΩ VN540 Single HSD PowerSO-36

AN1066

Abstract: W144 W181 W42C31-03 Signal Path Designer
Contextual Info: Spread Aware TM AN1066 The use of Spread Spectrum Timing SST technology has pervaded the motherboard market to the point where it is being used in virtually all designs using chipsets that support a 100-MHz Front Side Bus (FSB). Spread spectrum timing signals are used for PCI, CPU, and memory buses. When

TDA7851A

Contextual Info: TDA7851A 4 x 48 W MOSFET quad bridge power amplifier Datasheet  production data Features • Multipower BCD technology ■ High output power capability: – 4 x 48 W/4  Max. – 4 x 28 W/4  @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2  Max. ■ MOSFET output power stage

tda7851

Abstract: TDA7851A TDA-7851 AC00024 TDA785 4X72 D05AU1613 Complementary Audio Power Amplifier Flexiwatt AC00034
Contextual Info: TDA7851A 4 x 45 W MOSFET quad bridge power amplifier Features • Multipower BCD technology ■ High output power capability: – 4 x 45 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max. ■ MOSFET output power stage ■ Excellent 2 Ω driving capability

Contextual Info: Agilent 8473D Planar-Doped Barrier Detector 0.01 to 33.0 GHz Data Sheet This Planar- Doped Barrier PDB detector, combines the best characteristics of point- contact and low barrier Schottky to provide performance never before achievable. This new PDB diode technology provides

infrared illuminator diagram

Abstract: ASDL led 940nm 3mm emission Diode Optical Smoke DEtector ASDL-4671 ASDL-4671-C22 ASDL-4671-C31 ASDL-4671-D22 ASDL-6620 high output ir led 940nm
Contextual Info: ASDL-4671 High Performance T-1 3mm AlGaAs/GaAs Infrared (940nm) Lamp Data Sheet Description Features ASDL-4671 is a high performance Infrared emitter that utilizes AlGaAs on GaAs LED technology. It is optimized for high efficiency at emission wavelength of 940nm

ipad

Abstract: diplexer diplexer wireless Diplexer 1710 2170 diplexer gsm DCS
Contextual Info: IPAD – integrated passive devices for RF wireless applications TM New, high performance, thin film IPAD RF technology STMicroelectronics has introduced a new IPAD thick copper process delivering high performance, low cost and space efficient RF devices such as detectors, couplers, diplexer and