UNITED DETECTOR SILICON DIODE Search Results

United Detector Technology Photodiodes

Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Contextual Info: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS

6953-B

Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Contextual Info: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.

Contextual Info: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device

Contextual Info: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum

tunnel junction diode

Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Contextual Info: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.

HSCH-9161

Abstract: United Detector silicon diode application note 979
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It

CME7660-203

Abstract: metal detector service manual CDP7624-207
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction

bare die schottky diode

Abstract: CDB7619-000
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction

HSCH-9161

Abstract: HSMS-2850 United Detector silicon diode
Contextual Info: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through

CME7660-000

Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Contextual Info: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction

Contextual Info: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green

DDC2354-000

Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
Contextual Info: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process

Quality Technologies optocouplers

Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.

Contextual Info: DATA SHEET SMSA7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Automotive Applications • In-Vehicle WiFi @ 2.4 GHz and 5.0 GHz  Infotainment  Navigation  Garage door openers  Wireless control systems  Telematics Features

Contextual Info: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green

Contextual Info: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green MSL-1 @

CDB7619-000

Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000 United Detector silicon diode
Contextual Info: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green

Contextual Info: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W & CNX83A.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W & CNX83A.W consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES 0.270 6.86 0.240 (6.10)

a140mW

Abstract: H11B815 4pin diode
Contextual Info: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA

DDB2265-230

Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
Contextual Info: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D  etectors Features l l l l l B  oth P-type and N-type low barrier silicon available L ow 1/f noise B  onded junctions for reliability P lanar passivated beam-lead and chip construction

Contextual Info: DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications • Detectors  Mixers Features  Available in both P-type and N-type low barrier designs  Low 1/f noise  Large bond pad chip design  Planar passivated beam-lead and chip construction

gold detector circuit free

Abstract: CDB7619-000 CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Contextual Info: DATA SHEET Silicon Schottky Diode Chips Applications ● ● Detectors Mixers Features Low capacitance for usage beyond 40 GHz ZBD and low-barrier designs ● P-type and n-type junctions ● Large bond pad chip design ● Lead Pb -free, RoHS-compliant, and Green

L40205

Contextual Info: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other

CDB7619-000

Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Contextual Info: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications x Detectors x Mixers Features x Low capacitance for use beyond 40 GHz x ZBD and low barrier designs x P-type and n-type junctions x Large bond pad chip design x Packages rated MSL1, 260 qC per JEDEC J-STD-020