UM 9102 Search Results

transistor smd ba rn

Abstract: sot494
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification UHF push-pull power transistor BLV2048 FEATURES PINNING - SOT494A • Em itter ballasting resistors fo r optim um te m perature profile PIN SYMBOL 1 c

741 LEM

Abstract: AM/amplifier LEM 741
Contextual Info: DISCRETE SEMICONDUCTORS S^EET BLV2045N UHF power transistor P relim inary specification Philips Semiconductors 1999 A p r 23 PHILIPS Philips Semiconductors Preliminary specification UHF power transistor BLV2045N FEATURES PINNING - SOT39QA • Em itter ballasting resistors fo r optim um tem perature

hall generator

Abstract: IRC FA series resistor PI-600
Contextual Info: UM m UL CURRENT/WATT SENSORS U>£l7 M <N PI SERIES ' - y ’A i 7 s" . FEATURES Senses ac/dc C urrent/Pow er Small Size, Lightweight Low Cost Wave Solderable Bi-Directional Fast Response Easy Installation TYPICAL APPLICATIONS Actual Size • Replaces Shunts

911-32006

Abstract: din 84 911-32046
Contextual Info: Power terminals 182 Power terminals Technical specifications Hole specifications Power terminal grid 5.08 x 7.62 mm Power terminal grid 5.08 x 10.16 mm Blade connector Accessories ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de

TK 9107

Abstract: 5002 TK9107 9012 SMD dhs108 sms504 dHS-902 hz 9102 SBS 14 Half-Pitch Dual-in-line Switches
Contextual Info: 5 5.1 Dual-in-line Switches Professional Dual-in-line Switches Series Poles goldplating Actuator SMD Description Page Switches for maximum reliability and high specification DSS 100 2 / 4 / 6 / 8 / 10 2.0 m raised 124 Switches for professional application

AR1310

Abstract: AR3010 AR9102 AR1303 ms 25237-327 Telefunken TLX 22 4 G5602 MV55A rca 7646 RCA 7945
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 708-459-3400 Fax 708-459-2708 _ «OHI C hicago M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e Cross R e fe re n c e Competitor Page

J278

Abstract: Arcom Control Systems PCSYSCON
Contextual Info: J278 PCSYSCON 2192-09176-000-000 PCSYSCON PC-kompatible Systemsteuereinheit Benutzerhandbuch Produktinformationen Ausführliche Informationen über andere Produkte von Arcom erhalten Sie über das FaxBack-System nachstehende Telefonnummern oder über unsere Website in Großbritannien (www.arcom.co.uk) und in

Contextual Info: KC73129UC 1/3 INCH CCD IMAGE SENSOR FOR PAL INTRODUCTION The KC 73129UC is an interline transfer CCD area im age sensor developed fo r PAL 1/3inch optical form at video cam eras, surveillance cam eras, object detectors and im age pattern recognizers. High sensitivity is achieved

M15098

Abstract: MS90451-7152 MS25237-387 ms24515 MS25237-327 MS24367-715AS15 MS25231-313 MS25237 OL387 MS15571-11
Contextual Info: 1080 Johnson Drive Buffalo Grove, IL 60089 _ 708-459-3400 Fax 708-459-2708 flH H C h ic a g o M iniature WHERE INNOVATION COMES TO LIGHT C o m p e titiv e C ross R e fe re n c e Competitor Page

st smd diode marking code VU

Abstract: lm 709
Contextual Info: DISCRETE SEMICONDUCTORS PRLL5817; PRLL5818; PRLL5819 Schottky barrier diodes Product specification Supersedes data of 1996 May 03 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification Schottky barrier diodes PRLL5817; PRLL5818; PRLL5819

V9102

Contextual Info: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ

V9102

Abstract: A510K N-Channel Depletion-Mode MOSFET HV9100 HV9100C HV9100PJ HV9102 HV9102P HV9102PJ HV9103
Contextual Info: HV9100 HV9102 HV9103 Supertex inc. High-Voltage Switchmode Controllers with MOSFET Ordering Information +VIN Max Duty Cycle MOSFET Switch Package Options Min Max Feedback Voltage b v dss ^DS ON 10V 70V ± 1 .0 % 49% 150V 5 .0 ft HV91 OOP H V9100C H V9100PJ

Contextual Info: DISCRETE SEMICONDUCTORS BGA2001 silicon MMIC amplifier Preliminary specification Supersedes data of 1999 Jan 01 Philips Sem iconductors 1999 Feb 25 PHILIPS Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R

BFV421

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BFV421 PNP high-voltage transistor 1999 Apr 23 Product specification Supersedes data of 1996 Dec 09 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor BFV421

transistor s11 s12 s21 s22

Abstract: MRC039
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 8 GHz wideband transistor BFQ67T PINNING FEATURES • High power gain PIN • Low noise figure

Contextual Info: DISCRETE SEMICONDUCTORS PHN70308 7 N-channel 30/80 mQ FET array Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification 7 N-channel 30/80 mQ FET array PHN70308 FEATURES PINNING SOT341-1 SSOP28 • 30 m£2 pass/isolation FET

MRC039

Abstract: ST MRC039 transistor Gigahertz BFQ67T SC-75 MRC041 mrc043 "marking Code" V2 Marking code V2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFQ67T NPN 8 GHz wideband transistor Product specification Supersedes data of 1999 Nov 02 2000 Mar 06 Philips Semiconductors Product specification NPN 8 GHz wideband transistor BFQ67T FEATURES DESCRIPTION • High power gain

Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Product specification General purpose diode BAS321 FEATURES PINNING • Sm all plastic SM D package PIN DESCRIPTION • S w itching speed: max. 50 ns 1 cathode • G eneral application

MAR 745 TRANSISTOR

Abstract: BFR505T MRC013 SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR505T NPN 9 GHz wideband transistor Product specification Supersedes data of 1999 Feb 11 2000 Mar 14 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFR505T FEATURES DESCRIPTION • Low current consumption

MRC027

Abstract: MRC021 MRC025 BFR520T SC75 MRC028 MAM337
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BFR520T NPN 9 GHz wideband transistor Preliminary specification 1999 Oct 18 Philips Semiconductors Preliminary specification NPN 9 GHz wideband transistor BFR520T PINNING FEATURES • High power gain PIN DESCRIPTION

mcl PHP

Abstract: DC35d 4d55
Contextual Info: Filters son Surface Mounta High Pass 16.5 MHz to2.2 GHz SURFACE MOUNT SCHF llllllMilllll fc o , MHz Norn, S top ban d Passband CAPD DATA t rom STOP BAND, MHz PHP PRfCE à n vÂV C X .u n n if ] . {lOSS > 4QdB <Ioss>20dB) Joss < TdB} : O n TYp. SCHF-17

BAP50-05

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SHEET BAP50-05 General purpose PIN-diode Preliminary specification Philips Sem iconductors 1999 Feb 01 PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-05 PINNING FEATURES • Tw o elem ents in com m on cathode configuration in a

SMD diode sg 46

Abstract: SMD diode sg 03
Contextual Info: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS Philips Semiconductors Preliminary specification General purpose PIN-diode BAP50-03 PINNING FEATURES • Low diode capacitance PIN • Low diode forw ard resistance. DESCRIPTION 1 cathode 2 anode APPLICATIONS