UM 66 IN Search Results

Contextual Info: lie Rechte vorbehalten/ HU rights r t s m t i 3 09 66 09 66 09 66 09 66 09 66 09 66 Part 512 6601 M3 512 7601 M3 512 5601 M3 512 6602 4-40 UNC 512 7602 4-40 UNC 512 5602 4-40 UNC number nut thread 2 3 0,76 um Au 2 3 0,76 um Au Performance level Dot. Detail. 2 3 - N O V - 0 1

Contextual Info: lie Rechte vorbehalten/ HU rights rtsm ti 3 Dot. Detail. 2 3 - N O V - 0 1 Name JB loop. 09 66 09 66 09 66 Part 522 6803 4-40 UNC 522 7803 4-40 UNC 522 5803 4-40 UNC number screw-lock 2 3 0,76 um Au Performance level Stand. 29733 23-N0V-01 JB Mod. Dot. Name

Contextual Info: lie Rechte vorbehalten/ HU rights r t s m t i 3 """"""""""""y!z Dot. Detail. 2 3 - N O V - 0 1 Name JB loop. 09 66 09 66 09 66 Part 562 6817 4-40 UNC 562 7817 4-40 UNC 562 5817 4-40 UNC number screw-lock 2 3 0,76 um Au Performance level Stand. 29733 23-N0V-01

Contextual Info: lie Rechte vorbehalten/ HU rights rtsm ti 3 Dot. Detail. 2 3 - N O V - 0 1 Name JB loop. 09 66 09 66 09 66 Part 512 6603 4-40 UNC 512 7603 4-40 UNC 512 5603 4-40 UNC number screw-lock 2 3 0,76 um Au Performance level Stand. 29733 23-N0V-01 JB Mod. Dot. Name

20C40C

Abstract: Scans-0017389
Contextual Info: 2V/400A Hot Cathode Mercury Vapour Rectifier 2V/400A C A TH O D E. Oxide-coated filament, shielded Voltage N om inal current 2.5 5.0 V A 170 66 mm. mm. 125 g. D IM EN SIO N S. Maxim um overall length Maxim um bulb diameter Base— Am erican medium 4 pin N e t weight

UM91611

Abstract: T25610 UM91610
Contextual Info: UM O U M 91611 10 Memory Pulse Dialer ¡55 Features • Ten 18-digit number memories plus last number redial Independent select inputs for variation o f dialing rates 10PPS/20PPS , make/break ratio (33*/4:66% /4 0 :6 0), memory (22 digit) memory on chip inter-digit pause (400ms/800ms)

6 pins IC cbe

Contextual Info: Æ c fe / -m v 2 .0 CorePCI Target 33/66 MHz P ro d u ct S um m ary In te n d e d U s e • High-Performance PCI Target Applications - 32-Bit, 66MHz. 3.3V - 32-Bit, 33MHz, 5V or 3.3V • Back-End Support for Synchronous DRAM, I/O

Contextual Info: LF9502 2K Programmable Line Buffer DEV IC ES IN C O R PO R A TE D FEATURES □ 66 M H z M axim um O perating Frequency □ Program m able Buffer Length from 2 to 2049 Clock Cycles □ 10-bit D ata Inputs an d O utputs □ Data Delay an d D ata Recirculation

fuse abb mtbf

Abstract: circuit breaker abb mtbf t1.25al250v T1.25A TRANSFORMADORES D-32823 fuente conmutada D3282 temperature temperature abb mtbf
Contextual Info: Order No.: 28 66 44 6 MINI-PS-100-240AC/24DC/1.3 Instrucción de montaje para el ingeniero eléctrico T1.25AL250V 6 A / 10 A / 16 A B Sicherheits- und Warnhinweise 24 V DC / ± 1 % 22,5 - 28,5 V DC Um einen sicheren Betrieb des Gerätes zu gewährleisten und alle Funktionen nutzen zu

Contextual Info: / DWG. NO. SD -54556-004 a ie NOTES 66 m 7 7.75 MAX. 71.8 : Tf^X^FJMSl'T'U x7—, UL94V-0 GLASS FILLED LIQUID CRYSTAL POLYMER, WHITE, UL94V-0 TERMINAL COPPER ALLOY 37J U : m NAIL : BRASS 2.it>z>&’±m PLATING 5 '- 5 a iL 0.38 um MINIMUM TERMINAL CONTACT AREA : GOLD 0.38MICROMETER MINIMUM

lts 547 pin configuration

Abstract: CG SERIES MALLORY CAPACITOR d0256 P3604
Contextual Info: ANALOG ► D E V IC E S FEATURES Push-Pull Charge Pump Doubler Reduces O utput Ripple +3.0 V to +3.6 V Operation V 0 ut > +5.4 V @ 320 mA M axim um Load O utput Impedance, Rjotal ^ 1-66 i l Shutdow n Capability Overvoltage Protection: V !N > +4 V Operating Tem perature Range: -20°C to +85°C

17D06

Abstract: 17DQ6B 17DQ6-B TRIODE rs tube Scans-0017313 5000 watts power amplifier circuit diagram 6DQ6B
Contextual Info: I7DQ6B TUN6*SOL -BEAM PENTODE JtüEC CAP SKIRTED MINIATURE JEOEC 6AM SHORT MEDI UM-SHE LL 6 PIN O C T A L 66-122, 66-14-6 OR 7 PIN O C TA L 67-111, B 7 - H 9 OR 65-190 + — O U TL I N E D R AW IN G J E O E C 1?-51 T HE 1 7 D Q 6 B IS A B E A M P O W E R P E N T O D E P R I M A R I L Y D E S I G N E D F OR US E A S THE

93c tssop

Abstract: 93C86
Contextual Info: CAT93C46/56/57/66/86 1K/2K/2K/4K/16K-Bit Serial E2PROM FEATURES • High Speed Operation: Power-Up Inadvertant Write Protection - 93C46/56/57/66: 1MHz - 93C86: 3MHz 1,000,000 Program/Erase Cycles 100 Year Data Retention ■ Low Power CMOS Technology ■ 1.8 to 6.0 Volt Operation

405GP

Abstract: 405GPR powerpc 405 PowerPc405GP powerpc 405gp ppc405gp IBM powerpc 405gp AMCC PPC 405GP 1/powerpc 405gp
Contextual Info: PRODUC T BRIEF PowerPC 405GP/GPr Embedded Processor With speeds of up to 266 MHz 405GP or 400 MHz (405GPr), the PowerPC 405GP/GPr family of embedded processors provides an optimized balance of performance, low power, and features. These processors are ideally suited for general purpose Internet, communication, data storage, consumer, imaging

Contextual Info: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Fiber-Coupled Diode Lasers cw, passively cooled with integrated TEC, new: 880 nm JOLD-45-CPXF-1L Design 215415624 I 215415124 Features: Applications:

Contextual Info: l i e Rechte vorbehalten/ HU rights rts m ti 3 Mat ing face according to MIL-C-2A308 / DIN 41 652 / CECC 75301 -802 No. 1 contact 4 CO 00,6 (PCB p l a t i n g = Ti n Mounting force on P r i nt e d board : 25 - 80 N 09 66 09 66 09 66 09 66 09 66 09 66 Part

Contextual Info: lie Rechte vorbehalten/ HU rights r t s m t i 3 Mat ing face according to MIL-C-2A308 / DIN 41 652 / CECC 75301 -802 No. 1 contact 4 (PCB plating = Tin 3,1 +0,1 25 4x 2,74 =10,96 No. 1 contact -e w :h B E] B 2,74 ra: n co 30,9 122 6801 M3 122 7801 M3 122 5801

Contextual Info: lie Rechte vorbehalten/ HU rights rts m ti 3 Mat ing face according to MIL-C-2A308 / DIN 41 652 / CECC 75301 -802 No. 1 contact 4 CO 00,6 (PCB p l a t i n g = Ti n Mounting force on P r i nt e d board : 25 - 80 N 09 66 09 66 09 66 09 66 09 66 09 66 Part

Contextual Info: lie Rechte vorbehalten/ HU rights r t s m t i 3 Mat ing face according to MIL-C-2A308 / DIN A1 652 / CECC 75301 -802 No. 1 contact 4 (PCB plating = Tin 3,1 +0,1 25 Ax 2,7A =10,96 -e w :h B E] B 2,7A ra: >—< 0 0 ( 01 2 5 *0.1 30,9 09 66 09 66 09 66 09 66

Contextual Info: GERMANIUM POWER TRANSISTORS Type N um ber Case Type Y CBO V ^ ' IO V C U R R E N T G A IN y,„ , V ^ CES V V Min. V Max. A S A T U R A T IO N V O L TA G E S Vctm Kit,., V V A A 0, c ° C /W 6 A M P G E R M A N IU M P N P C o n t. 2N1137B 2N1138 2N 1138A

TI-5045

Abstract: mais memoire topo teclado
Contextual Info: TI-5045 SVC Guidebook Manuel d’instructions Manual de instrucciones Manual de instruções English, Français, Español, Português Antes de usar o ensamblar el producto lea cuidadosamente este instructivo 1999 Texas Instruments Incorporated Getting Started

M V8200

Contextual Info: SIEMENS 3.3V 8M x 64/72-Bit 1 BANK SDRAM Module 3.3V 16M x 64/72-Bit 2 BANK SDRAM Module HYS64/72V8200GU-8/-10 HYS64/72V16220GU-8/-10 168 pin unbuffered DIMM Modules • 168 Pin PC1 OO-compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications

931c66

Abstract: ic 8pin C66
Contextual Info: 93LC46/56/66 M ic ro c h ip 1K/2K/4K 2.0V CMOS Serial EEPROM FEATURES DESCRIPTION • Single supply with program m ing operation dow n to 2.0V Com m ercial only • Low pow er C M OS technology - 1 m A active current typical - 5 nA standby current (typical) at 3.0V

Contextual Info: ROHM C O R P / EXEL MELECS bbE D • VflETOlH G D Gl f l O b MICROELECTRONICS Tfll XL93C66 Ex&lfonce In & 4,096-Bit Serial Electrically Erasable PROM with 2V Read Capability FE A TU R ES ■ ■ H ard w are and Softw are W rite Protection — D efaults to w rite-d isabled state at p ow er up