UM 6164 Search Results

disc Piezoelectric Sensor

Abstract: "disc Piezoelectric Sensor circuit for piezoelectric sensor UM 6164 Piezoelectric Gyroscopes
Contextual Info: CONTENTS M inim um Q uantity* G u id e .4-14 Capacitors Global Part N um berin g. 16-25 Ceramic Capacitors 1 2 -5 0 0 V . 56 -57 Monolithic Ceramic Capacitors Capacitance Range.26

UM 6164

Abstract: 6164 SM 230 SM230
Contextual Info: OESCRPTUN REV PRODUCT NO A RLSOS701M REVO BY OATE RCRASTA 13JUN.97 61644-001 r SM 0.64 * 0.03 S O .0251.001 200 251 5.08 .100 .200 SM 0.91 230 .036 REF NOTES 1 MATERIAL BODY : GLASS FILLED PPS UL 94V-0 . COLOR BLACK TERMINAL : PHOSPHOR BRONZE PLATING : 0,38 un/15 u* GXT OVER 127 um/50 u* NICKEL.

Contextual Info: & LM6164/LM6264/LM6364 High Speed Operational Amplifier General Description F e a tu re s The LM 6164 fam ily of high-speed am plifiers exhibits an e x­ cellent speed-pow er product in delivering 300V per ^is and 175 M Hz G B W stable down to gains as low as -i-5 with only

6364M

Abstract: noiseg 6264N
Contextual Info: Semiconductor LM6164/LM6264/LM6364 High Speed Operational Amplifier General Description Features The LM 6164 fam ily of high-speed am plifiers exhibits an e x­ cellent speed-pow er product in delivering 300V per ^is and 175 M Hz G B W stable dow n to gains as low as +5 w ith only

UM 6164

Abstract: 6164 memory
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M ilitary 6164 8 K x 8-Bit Fast S ta tic Random A c c e s s Memory The 6164 is a 65,536-bit static random access m em ory organized as 8192 w ords of 8 bits, fabricated using M otorola's second-generation high-performance silicongate CM O S {HCM OS III technology. Static design elim inates the need for external

6164 memory

Abstract: 6164 memory 6164 motorola 6164 Motorola power supply 6164-70 cdip28pin
Contextual Info: Order this data sheet by 6164/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8K x 8-Bit Fast Static Random Access M em ory The 6164 is a 65,536-bit static random access m em ory organized as 8192 words of 8 bits, fabricated using M otorola's second-generation high-perform ance silicongate CM OS HCM OS III technology. Static design elim inates the need for external

oM 6164

Abstract: 6264N ic 6264 UM 6164 6364M
Contextual Info: LM6164/LM6264/LM6364 National Semiconductor tß LM6164/LM6264/LM6364 High Speed Operational Amplifier General Description Features The LM 6164 fam ily o f high-speed am plifiers exhibits an e x­ cellent speed-pow er product in delivering 300V per f.as and

74F138

Abstract: 74F32 74F374 F138 F374 HM6168H-45 "FRC"
Contextual Info: a Advanced Micro Devices 674219 FIFO RAM Controller O rdering Inform ation F e a tu re s / Benefits • High-speed, no fall-through time • Deep FIFOs— 16-blt SRAM address Part Num ber Pins Type Tem perature 674219 40 CD 040 Com • Arbitration read/write

Contextual Info: mm TRANSIENT VOLTAGE SUPPRESSORS cont. (ELECTRICAL CHARACTERISTICS @ 25 C) TEL: 805-498-2111 FAX : 805-498-3804 1500 WATT AXIAL LEAD - HERMETIC QPL 1N6138ATHRU 1N6173A BIDIRECTIONAL D evice Type 1 N 6138A 1N 61 39A 1N 61 40A 1N 61 41A 1N 61 42A 1N 61 43A

schleifring

Contextual Info: SOLARE ENERGIE Für die Windenergie- und Solartechnik fertigt Rübsamen einbaufertige Bauteile mit teils stattlichen Dimensionen. Hergestellt werden diese aus hochvergütetem Stahl, Aluminium oder Buntmetall per Metalldrücken und Tiefziehen. Per Metalldrücken

SRAM sheet samsung

Contextual Info: Prelim inary CMOS SRAM KM 6164002B, KM6164002BI D o cu m e n t Title 256Kx16 Bit High Speed Static RAM 5V O perating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory R ev No. H isto ry D raft Data R em ark

Contextual Info: AMP AMP CIS Verbindungssystem AMP CIS Commercial Interconnection System Gehäuse für Gabelkontakte mit Kodierbalken Female on Wire FOW Connector Housings with Keying Cavities Ansicht „X“ V ie w „ X “ 2 Gehäusematerial: schwarz: Makroion UL 94 V-0

n5904

Abstract: SDA5200N
Contextual Info: [f U lI MN5904/5905 6-Bit, 100MHz FLASH A/D CONVERTER MICRO NETWORKS DESCRIPTION FEATURES • 100M Hz Conversion Rate • 140M H z Input Bandwidth • High Input Im pedance • ECL 10K Com patible O utputs • Overflow O utput 7th Bit • Low 2 5p F Input Capacitance

Contextual Info: ADVANCE M IC R O N I ii^ n w r w MT16LD T 164(S) ! MEG x 64 DRAM MODULE 1 MEG x 64 DRAM 3.3V, OPTIONAL EXTENDED REFRESH, SELF REFRESH FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single-in-line package • H igh-perform ance CMOS silicon-gate process

instalaciones electricas

Abstract: esquema
Contextual Info: FRANÇAIS BLOCKTRAB BT-1S-230AC/A Appareils de protection antisurtension pour alimentation 230 . 240 V 1. Safety regulations 1. Sicherheitsbestimmungen Please observe the national and safety regulations during installation. Before assembly, BLOCKTRAB BT-1S… must

82c258

Contextual Info: SIEMENS Advanced DMA Controller SAB 82C258A for 16-/32-Bit Microcomputer Systems CMOS Advance Inform ation SAB 82C258A-1 SAB 82C258A-16 SAB 82C258A-12 SAB 82C258A-20 10 MHz 16 MHz 12.5 MHz 20 M Hz • Fully com patible with the SAB 82258A hardware, software and pin-out .

uberspannungsableiter

Abstract: Varistoren
Contextual Info: Tools & Services Referenzdesign für den Überspannungsschutz November 2006 Schutz aus der Dose Blitze sind nicht nur ein beeindruckendes Naturphänomen, sondern eine große Gefahrenquelle für Elektrogeräte und installationen. Deutschland zählt zu den gewitterreichsten Regionen Europas. So wurden im Jahr 2005 über 1,7

tm 48f 038 transformer

Abstract: 2j 103k 51f smd
Contextual Info: Custom Solutions & Manufacturing Excellence From the day our company opened for business in 1947, our continuous growth as a U.S. manufacturer has been a great source of pride. We have accomplished this, in part, by providing custom solutions for your challenging circuit designs. Our products are

HCPL 601

Abstract: E55361 HCPL-7101 optocoupler 2701 2701 optocoupler CNW138 CNW139 BH rn transistor hcpl7100
Contextual Info: WfipXHEW LETT PACKARD m L 'tim Low Input Current, High Gain Optocouplers Technical Data CNW138 CNW139 F eatures A pplications D escrip tion • 5000 Vrms/1 M inute Insula­ tion W ithstand C apability • W orldwide Safety Approval UL1577 Pile No. E55361

UM 6164

Abstract: 6164 memory
Contextual Info: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M ilita ry 6 1 6 4 8 K x 8 -B it Fast S ta tic Random Access M e m o ry kä hä M P0 m m / " h e 6164 is a 65,536-bit sta tic ra nd o m access m e m o ry organized as 8192 w o rd s o f 8 bits, fa b rica te d u sin g M o to ro la 's se con d -g en e ra tion h ig h -p e rfo rm a n c e s ilico ngate CMOS HCMOS III te ch n olo gy. S tatic design e lim in a te s th e need fo r external

SSD1329

Abstract: ICS49 SSD1329 DIAGRAM SSD1329z ics63 a622 a634 d7811 6800-PARALLEL a626
Contextual Info: SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1329 Advance Information 128 x 128 OLED Segment / Common Driver with Controller Equips with 16 Gray Scale Levels and 64 Hard Icon Lines This document contains information on a new product. Specifications and information herein are subject to change without

sensor de corriente

Abstract: 06ATEX0002 esquema resistencia CIRCUITO IMPRESSO SW30 S-PT-1X2-24DC
Contextual Info: Protección contra sobreten- Proteção contra sobretensão siones directamente en la diretamente na sonda de sonda de medida medição FRANÇAIS ENGLISH DEUTSCH Protection antisurtension directement sur le capteur de mesure Surge protection directly on the measuring sensor

a23 445-1 409

Abstract: 82257 sab80186 siemens s7 IM 365 82257-N SAB 80186 SIEMENS et 200 cpu
Contextual Info: SIEM ENS Advanced DMA Controller SAB 82257 for 8-/16-Bit Microcomputer Systems Prelim inary • High-perform ance 16-bit DMA controller for 16-bit family processors SAB 80286, SAB 80186/188, SAB 8086/88 • 4 independent high-speed DMA channels • Adaptive on-chip bus interface for

MCM6164

Abstract: MCM61L64 MCM61L64C55 6164 memory UM 6164 M6164 61L64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6164 MCM61L64 8 K x 8 Bit Fast S tatic Random Access M em o ry The M C M 6164/M CM 61L64 is a 65,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's second-generation high-performance silicon-gate CM OS {HCMOS III technology. Static design eliminates the need for external