UM 167 Search Results

Contextual Info: Sipe* ’ C»p0f«»0n * SIGNAL PROCESSING EXCELLENCE PACKAGE: PLASTIC DUAL-IN-LINE NARROW m eA = 0.300 BSC (7.620 BSC) DIMENSIONS (Inches) M inim um /M axim um (mm) 160 8-PIN 14-PIN 16—PIN 18-PIN 20-PIN 22-PIN A2 0.115/0.195 (2.921/4.953) 0.115/0.195

Contextual Info: Lattice G A L 2 2 L V 1 0 Low Voltage E2CMOS PLD Generic Array Logic I Semiconductor I Corporation FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 4 ns Maxim um Propagation Delay — Fmax = 250 MHz — 3 ns Maxim um from Clock Input to Data O utput

fs2f

Contextual Info: VT 50 重量顯示器 使用手冊 修訂版 B, 2006 年 10 月 Doc # UM-VT050-CHT 目錄 第1章 1.1 1.2 1.3 操作模式 . 瞭解顯示器 .

Contextual Info: UM10429 LPC1102/04 User manual Rev. 6 — 12 March 2013 User manual Document information Info Content Keywords ARM Cortex-M0, LPC1102, LPC1102UK, LPC1104, LPC1104UK Abstract LPC1102/04 User manual UM10429 NXP Semiconductors LPC1102/04 UM Revision history Rev

Contextual Info: UM10415 EM773 User manual Rev. 2 — 7 December 2011 Document information Info Content Keywords Energy metering, ARM Cortex-M0, EM773 Abstract EM773 User manual User manual UM10415 NXP Semiconductors EM773 UM Revision history Rev Date 2 20111207 1 20100910

Contextual Info: ANALOG DEVICES ADSP-2106X SHARC DSP Microcomputer Family ADSP-21062/ADSP-21062L S UM M AR Y High Performance Signal Processor for Com munica­ tions, Graphics and Im aging Applications Super Harvard Architecture Four Independent Buses for Dual Data Fetch,

jtag timing

Contextual Info: 16 Electrical Specifications This chapter specifies the follow ing electrical behavior o f the 21154: • P C I electrical conform ance • A bsolute m axim um ratings • D C specifications • A C tim ing specifications 16.1 PCI Electrical Specification Conformance

GAL programmer schematic

Abstract: schematic set top box abv 1000 inverter GAL programming Guide vhdl projects abstract and coding ABEL-HDL Reference Manual gal programmer gal programming algorithm ieee floating point vhdl new ieee programs in vhdl and verilog
Contextual Info: ispDesignExpert User Manual Version 8.0 Technical Support Line: 1-800-LATTICE or 408 428-6414 DE-UM Rev 8.0.1 Copyright This document may not, in whole or part, be copied, photocopied, reproduced, translated, or reduced to any electronic medium or machine-readable form without

2N5114

Abstract: 2N5115 field effect transistors TELEDYNE CRYSTALONICS
Contextual Info: SWITCHING 2N5114 2N5115 P-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 4 60, PG. 60 For Analog Switch, Commutators and Choppers ABSOLUTE M AXIM UM RATINGS PAR A M E TE R SYM BOL MAX. U N IT Gate to Drain Voltage BVgdo 30 V Gate to Source Voltage B V gso

CY101E383

Abstract: diode SKE 39
Contextual Info: W r CY10E383 CY101E383 CYPRESS ECL/TTL/ECL Translator and High-Speed Bus Driver Features Functional Description • B iC M O S for optim um speed/power • H igh speed max. — 2.5 n s Ipu TTL-to-EC L — 3.5 n s tpo EC L-to-TTL The CY10/101E383 is a new-generation

ai 972

Abstract: SURFACE MOUNT,0603 ANG-S21 TGF4112-EPU 144028 ps 8170
Contextual Info:  4112 TGF4112-EPU • • • • • 12 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4112-EPU RF Performance at F = 2.3 GHz

Contextual Info: What H E W L E T T 1"UM P A C K A R D High Performance Isolated Collector Silicon Bipolar Transistor Technical Data HBFP-0420 Features • Id eal for High Gain, Low N oise A p p lications Surface Mount Plastic Package/SOT-343 SC-70 O u tlin e 4T • T ran sition F requ en cy

2SJ195

Contextual Info: 2SJ195 2083a 2092 A LD L o w D rive S eries V DSS = 1 0 0 V P Channel Power M OSFET 1)3768 F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. A bsolute M axim um R atings at Ta = 25°C Drain to Source Voltage Vdss Gate to Source Voltage

ZVEI Tone decoder

Abstract: ZVEI Tone generator FX003 FX103 FX1103 FX1103QC FX1103QE FX1103QZ 00000T 12345D
Contextual Info: CIVIL Sem iconductor Products om ni PRODUCT INFORMATION fl v- ' MSE D T-75-01-9O r V 4 „ A O Hybrid C M O S Selective r X I 1 U O Call Decoder • 237437b 0000373 =1 « C M C R Publication D/1103/4 July 1987 CO NS UM ER MICROCIRCUITS • Group uaii uecoamg

w12 diode

Abstract: 7C243 cerdip z PACKAGE CY7C243 CY7C244
Contextual Info: CY7C243 CY7C244 W j? c y p r e s s • F e a tu re s • C M O S for optim um speed/pow er 4K X 8 Reprogrammable PROM C apable o f w ith stan d in g greater th an 2001V sta tic discharge • T T L -com patible I/O • D irect replacem ent for bipolar PR O M s

ATF-45171

Contextual Info: That H E W L E T T 1"UM PA CKA RD 2 - 8 GHz Medium Pow er Gallium A rsenide F E T Technical Data ATF-45171 Features • High O utput P ow er: 29.0 dBm Typical P t dB at 4 GHz • High Gain a t ld B C om p ression : 10.5 dB Typical Gj dB at 4 GHz • High P ow er E fficien cy:

CY7C235A

Contextual Info: CY7C235A / CYPRESS • Features • C M O S for optim um speed/power • H igh speed — 18 ns address set-up — 12 n s clock to output • IK x 8 Registered PROM Slim , 3 00-m il, 24-pin p lastic or h er­ m etic D IP o r 28-pin LCC an d PLCC • SV ± 10% Vc c , com m ercial and

Contextual Info: I n ter n a tio n a l SMCJ5.0 thru SMCJ170A S e m ic o n d u c to r , I n c . TRAN SIEN T VO LTAG E SUPPRESSO RS PACKAGE DIMENSIONS SURFACE M OUNT 5.0 to 170 VOLTS 1500 W A T T PEA K PO W ER 1.0 W A T T S T E A D Y STATE MAXIM UM RATINGS AND C H AR A C TER ISTIC S

amperex

Abstract: Scans-0017372
Contextual Info: AMPEREX TRANSMITTING T UB E R.F. Pow er Am plifier, Oscillator, A.F. Pow er Amplifier, M odulator M A X I M U M R A T IN G S A N D T Y P IC A L O P E R A T IN G C O N D IT IO N S 1 A.F. P o w e r A m p lifie r a n d M o d u la t o r — C la s s A M axim um

3X2500H3

Abstract: 2000w power amplifier 34 amp is equal to how much watts Eimac 3X2500A3 vacuum tube amplifier I250A
Contextual Info: 3X2500D3 E I T E L - M e C U L L O U GH, I N C SAN BRUNO, M EDIUM -M U TR IO D E CALIFORNIA The E im a c 3X2500A3 is a m e d iu m -m u , fo r c e d -a ir -c o o le d , e x te rn a l-a n o d e tra n s m ittin g tr io d e w ith a m a x i­ m um p la te -d is s ip a tio n ra tin g o f 2500 w atts . R e la tiv e ly high p o w e r o u tp u t as an a m p lifie r , o s c illa to r o r m o d u la to r

AMPMODU II 280370-1

Abstract: 3-928776-2 transistor 3055 out hv 2.54mm shrouded header 826658-3 86286-1 280359 20 pin (2x10), 2.54mm pitch header connectors 5-828213-0 926209-2
Contextual Info: RoHS Ready AMPMODU Interconnection System European Standard Products 1 TYCO ELECTRONICS TECHNOLOGY PORTFOLIO ● Connector Systems / Electromechanical Components ● Relays ● Wireless ● Antennas, GPS Antennas, Integrated Antenna Systems ● Sensors ● Wire & Cable

Contextual Info: cP IITSU July 1997 Revision 1.0 data sheet SDC3UV6482- 67/84/100/125 T-S 24MByte (3Mx 64) CMOS Synchronous DRAM Module General Description The SDC3UV6482-(67/84/100/125)T-S is a high performance, 24-megabtye synchronous, dynamic RAM module organized as 3M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: cP IITSU September 1998 Revision 1.2 data sheet PDC4 U V6414B-103T-S 32MByte 4M x 64 CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414B-103T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words

Contextual Info: cP IITSU May 1997 Revision 1.0 data sheet SDC2UV6482D- 67/84/100/125 T-S 16MByte (2Mx 64) CMOS Synchronous DRAM Module General Description The S D C 2U V 6482D -(67/84/100/125)T-S is a high performance, 16-m egabtye synchronous, dynamic RAM module organized as