ULTRAFAST DIODE 20A 400V Search Results

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

APT30DS60B

Abstract: APT30DS60S APT6017BLL 400v high speed diode
Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

Contextual Info: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive

igbt 400V 20A

Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
Contextual Info: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .

SF20A400H

Abstract: SF20A400HPI marking JC diode SF20A
Contextual Info: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

Contextual Info: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

SF20A400H

Abstract: ultrafast diode 10a 400v SF20A400HPR
Contextual Info: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction

Contextual Info: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency  Dual common cathode rectifier construction

SF20A400

Contextual Info: SF20A400HZ2 Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features  Low forward voltage drop and leakage current  Ultrafast reverse recovery time trr<30ns  Low power loss and high efficiency 1  Dual common cathode rectifier construction

SF20A400H

Abstract: SF20A400HPI SF20A400
Contextual Info: SF20A400HPI Semiconductor Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction

diode C721

Abstract: c719 transistor
Contextual Info: PD - 9.808A kitemational lüRectifier IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

C1030

Abstract: c1036 transistor C1032 CEE 16a CEE 32A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRGPH50KD2 C1030 transistor
Contextual Info: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses

rac 16a 400v

Abstract: C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034
Contextual Info: PD - 9.1121A bitemational tor]Rectifier IRGPH50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V C ES • Short circuit rated -1 Ops @ 125°C, VGE = 10V 5jis 0 VGE = 15V • Switching-loss rating includes all "tail" losses

C1030 transistor

Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Contextual Info: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses

IR 1838

Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Contextual Info: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses

Contextual Info: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRF 3250

Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
Contextual Info: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than

IRF 3250

Abstract: TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF
Contextual Info: PD - 95570 IRG4PH40UD2PbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter

STTA2006M

Abstract: smd transistor p3
Contextual Info: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA­ TIONS: Freewheel or Booster Diode.

ug10gct

Abstract: BYT28 BYT28B BYT28F UG10 UGB10 UGB10GCT UGF10 UGF10GCT
Contextual Info: BYT28, BYT28F, BYT28B UG10GCT, UGF10GCT, UGB10GCT Series Dual Ultrafast Soft Recovery Rectifier Reverse Voltage 300 to 400V Forward Current 10A Reverse Recovery Time 35ns ct u d Pro New ITO-220AB BYT28F, UGF10 Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)