ULTRA LOW IGSS PA Search Results

2N4119

Abstract: 2N4117 FN4117 2N4117A 2N4118 2N4118A 2N4119A LS4117 igss jfet "low reverse current"
Contextual Info: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)

IRFP2907

Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
Contextual Info: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS

amelco

Contextual Info: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V

Low Capacitance MOS FET

Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
Contextual Info: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description

Contextual Info: Product specification PMV40UN TrenchMOS ultra low level FET Rev. 01 — 05 August 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

Contextual Info: Product specification PMV30UN µTrenchMOS ultra low level FET Rev. 01 — 25 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability:

2N6568

Abstract: Crystalonics TELEDYNE CRYSTALONICS teledyne transistor
Contextual Info: ULTRA LOW Ro n SWITCHING SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 4 5 6 , PG. 59 • LOW Rds - TA Ohms MAXIMUM • HIGH l DSS- 5 0 0 mA MINIMUM ELECTRICAL DATA A B S O LU TE M A X IM U M R A T IN G S PAR A M E TE R SYM BOL

ultra low power mosfet fast switching

Abstract: E 72873 40N60SCD1 MOSFET and parallel Schottky diode Anti parallel IF-25
Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data E 72873 Features MOSFET T Symbol Conditions VDSS TVJ = 25°C to 150°C

Contextual Info: IXKF 40N60SCD1 COOLMOS * Power MOSFET ID25 VDSS RDSon typ. trr with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 1 2 2 5 Features MOSFET T Symbol Conditions

Contextual Info: IXKF 40N60SCD1 ID25 VDSS RDSon typ. trr CoolMOS Power MOSFET with Series Schottky Diode and Ultra Fast Antiparallel Diode = = = = 38 A 600 V Ω 60 mΩ 70 ns in High Voltage ISOPLUS i4-PACTM Preliminary data 5 DS DF T 1 2 Features MOSFET T Symbol Conditions

XP151A11B0MR

Contextual Info: XP151A11B0MR ◆ ◆ ◆ ◆ ◆ ◆ Power MOS FET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description ■ ● ● ● ● Applications

XP131A0232SR

Contextual Info: XP131A0232SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance: 0.032Ω MAX Ultra High-Speed Switching SOP-8 Package • ● ● ● ● Applications Notebook PCs Cellular and portable phones On-board power supplies

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS CJ3439KDW N channel+P Channel MOSFET FEATURE z Surface Mount Package z Low RDS on z Operated at Low Logic Level Gate Drive z ESD Protected Gate z Including a N-ch CJ3134K and a P-ch CJ3139K

XP151A03A7MR

Contextual Info: XP151A03A7MR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.17Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-23 Package • Applications ■ General Description ■ Features The XP151A03A7MR is a N-Channel Power MOS FET with low on-state

semelab mosfet

Contextual Info: P-CHANNEL POWER MOSFET SML6609ASMD05 • Electrically Isolated and Hermetically Sealed Surface Mount Package Ultra Low On State Resistance Fast Switching Low Gate Charge Screening Options Available • • • • ABSOLUTE MAXIMUM RATINGS Tcase = 25°C unless otherwise stated

XP161A11A1PR

Abstract: sot 89 MOS FET
Contextual Info: XP161A11A1PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Gate Protect Diode Built-in ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A11A1PR is a N-Channel Power MOS FET with low on-state

XP132A1365SR

Abstract: XP132A1635SR
Contextual Info: XP132A1635SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.033 Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones

XP131A1520SR

Abstract: 362 N MOSFET
Contextual Info: XP131A1520SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.02Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones

XP131A1235SR

Contextual Info: XP131A1235SR ◆ ◆ ◆ ◆ ◆ Power MOSFET N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.035Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones

XP161A0390PR

Contextual Info: XP161A0390PR Power MOS FET ◆ N-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.09Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP161A0390PR is a N-Channel Power MOS FET with low on-state

XP132A11A1SR

Contextual Info: XP132A11A1SR ◆ ◆ ◆ ◆ ◆ Power MOS FET P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.11Ω max Ultra High-Speed Switching SOP - 8 Package • General Description ■ ● ● ● ● Applications Notebook PCs Cellular and portable phones

RG 2006 10A 600V

Abstract: LMOS APT20N60CC3 TF114
Contextual Info: APT20N60CC3 600V 14A Super Junction MOSFET 0.210Ω TO-254 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Hermetic TO-254 Package D G S MAXIMUM RATINGS Symbol All Ratings: TC = 25°C unless otherwise specified.

XP151A13A0MR

Contextual Info: XP151A13A0MR ◆ ◆ ◆ ◆ ◆ ◆ N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω max Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package • General Description Power MOS FET ■ ● ● ● ● Applications