ULS 2004 Search Results

ULS 2004 Result Highlights (5)

Part	Manufacturer	Description	Download
CO-058RABNCX2-004	Amphenol Cables on Demand	Amphenol CO-058RABNCX2-004 BNC Right Angle Male to BNC Right Angle Male (RG58) 50 Ohm Coaxial Cable Assembly 4ft	PDF
CO-316RASMAX2-004	Amphenol Cables on Demand	Amphenol CO-316RASMAX2-004 RG316 High Temperature Teflon Coaxial Cable - SMA Right Angle Male to SMA Right Angle Male 4ft	PDF
SN75LBC182DG4	Texas Instruments	Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-SOIC 0 to 70
SN65LBC182D	Texas Instruments	Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-SOIC -40 to 85
SN75LBC182D	Texas Instruments	Half-duplex,15-kV ESD, 1/4 UL Transceiver 8-SOIC 0 to 70

ULS 2004 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ULS2004EK	Sprague	HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS	Scan	PDF	426.13KB	13
ULS2004H	Sprague	HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS	Scan	PDF	426.13KB	13
ULS2004J	Integrated Power Semiconductors	Darlington Transistor Arrays	Scan	PDF	875.24KB	8
ULS2004L	Integrated Power Semiconductors	Darlington Transistor Arrays	Scan	PDF	875.24KB	8
ULS2004R	Sprague	HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS	Scan	PDF	426.13KB	13

ULS 2004 Price and Stock

Filter by Manufacturer

Vishay Sprague


Vishay Sprague ULS2004R883 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON ARRAY Buffer/Inverter Based Peripheral Driver, 7 Driver, BIPolar, CDIP16
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	ULS2004R883		73			1 - 10 - 100 - 1000 - 10000 -	Get Quote

ULS 2004 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SDG8204 SamHop Microelectronics Corp. May, 2004 ver1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS 20V ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω ) Max Rugged and reliable. 30 @ VGS = 4.0V 5A Surface Mount Package.	Original	SDG8204	PDF
55N02 Contextual Info: S DP /B 55N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) ID Max S uper high dense cell design for extremely low R DS (ON). High power and current handling capability.	Original	55N02 O-220 O-263 55N02	PDF
8207 Contextual Info: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.	Original		PDF
85N03 Abstract: 85N03L Contextual Info: S DP /B 85N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S ID R DS on F E AT UR E S ( m W ) Max High power and current handling capability. 5 @ V G S = 10V	Original	85N03L O-220 O-263 85N03 85N03L	PDF
Contextual Info: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.	Original	U/D20N03L O-252 O-251 O-252AA O-252	PDF
SDM9926 Contextual Info: SDM9926 SamHop Microelectronics Corp. May. 2004 ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m W ) Max Rugged and reliable. 30 @ VGS = 4.0V 20V 5A Surface Mount Package.	Original	SDM9926 DM9926 SDM9926	PDF
Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.	Original	STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 O-252	PDF
DD 127 D TRANSISTOR Contextual Info: STU/D9916L SamHop Microelectronics Corp. Preliminary Mar.25 2004 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 30@ VGS = 10V 30V TO-252 and TO-251 Package.	Original	STU/D9916L O-252 O-251 O-252AA U/D9916L Tube/TO-252 O-252 DD 127 D TRANSISTOR	PDF
60n03l Abstract: 60N03 Contextual Info: S DP /B 60N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y V DS S F E AT UR E S R DS on ( m W ) Max ID High power and current handling capability. 11 @ V G S = 10V	Original	60N03L O-220 O-263 60n03l 60N03	PDF
Contextual Info: STU/D3055L2 SamHop Microelectronics Corp. Jul.16 2004 ver1.1 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 40 @ VGS = 4.5V	Original	STU/D3055L2 O-252 O-251 O-252AA U/D3055L2 O-252	PDF
Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. July 23, 2004 v1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V TO-252 and TO-251 Package.	Original	STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252	PDF
Contextual Info: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V	Original	SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L Tube/TO-252 O-252	PDF
d3055 Contextual Info: STU/D3055L2-60 SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON Super high dense cell design for low RDS(ON). ( m Ω) Max Rugged and reliable. 65 @ VGS = 4.5V 20V	Original	STU/D3055L2-60 O-252 O-251 O-252AA 300ms U/D3055L2-60 Tube/TO-252 d3055	PDF
D20N03L Abstract: D20N03 Contextual Info: S T U/D20N03L S amHop Microelectronics C orp. J uly 23 ,2004 V er1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( mW) S uper high dense cell design for low R DS (ON ). Max R ugged and reliable.	Original	U/D20N03L O-252 O-251 O-252AA Tube/TO-252 O-252 D20N03L D20N03	PDF

Contextual Info: S T G 8207 S amHop Microelectronics C orp. Dec 27, 2004 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.	Original		PDF
Contextual Info: S T U/D9916L Green Product S amHop Microelectronics C orp. Mar.25 2004 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ө) Max R ugged and reliable.	Original	U/D9916L O-252 O-251 O-252AA Tube/TO-252 O-252	PDF
Contextual Info: SDU/D20N03L SamHop Microelectronics Corp. July 2004 ver1.2 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY VDSS ID RDS ON (mW) Super high dense cell design for low RDS(ON). Max Rugged and reliable. 15 @ VGS = 10V 30V	Original	SDU/D20N03L O-252 O-251 O-252AA DU/D20N03L O-252	PDF
A17S Contextual Info: S DM40N02 S amHop Microelectronics C orp. May ,2004 ver 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 44 @ V G S = 4.5V	Original	DM40N02 300us A17S	PDF
D50N03 Abstract: D50N03L Contextual Info: S DU/D50N03L S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel Logic Level E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.	Original	DU/D50N03L O-252 O-251 O-252AA Tube/TO-252 O-252 D50N03 D50N03L	PDF
d30n02 Contextual Info: S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S S uper high dense cell design for low R DS ON . R DS (ON) ( m W ) Max ID R ugged and reliable. 20V	Original	DU/D30N02 O-252 O-251 O-252AA Tube/TO-252 O-252 d30n02	PDF
M8206 Contextual Info: S T M8206 S amHop Microelectronics C orp. Nov 22, 2004 ver1.1 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S 20V ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable.	Original	M8206 300us M8206	PDF
Diode Ds 135. 12A Abstract: M4884A Contextual Info: S T M4884A S amHop Microelectronics C orp. Dec 28 2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON (m W) S uper high dense cell design for low R DS (ON ). typ R ugged and reliable. 6 @ V G S = 10V	Original	M4884A Diode Ds 135. 12A M4884A	PDF
Contextual Info: S T U/D1530P L S amHop Microelectronics C orp. P reliminary Mar.28 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID -30V -20A R DS ON ( m W ) Max S uper high dense cell design for low R DS (ON ). R ugged and reliable.	Original	U/D1530P O-252 O-251 O-252AA O-252	PDF
Contextual Info: S DU/D9916 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 30 @ V G S = 4.5V	Original	DU/D9916 O-252 O-251 O-252AA O-252	PDF

ULS 2004 Search Results

ULS 2004 Result Highlights (5)

ULS 2004 Datasheets (5)

ULS 2004 Price and Stock

Vishay Sprague ULS2004R883

ULS 2004 Datasheets Context Search

55N02

8207

85N03

SDM9926

DD 127 D TRANSISTOR

60n03l

d3055

D20N03L

A17S

D50N03

d30n02

M8206

Diode Ds 135. 12A