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UF262DR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
UF2820R Abstract: FL2000 Contextual Info: RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz UF2820R Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C	Original	UF2820R UF262DR UF2820R FL2000	PDF

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UF2820R

Abstract: FL2000
Contextual Info: RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz UF2820R Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C

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UF2820R UF262DR UF2820R FL2000

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