UD DIODE Search Results
UD DIODE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| CEZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, ESC | Datasheet | ||
| CUZ8V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 8.2 V, USC | Datasheet | ||
| CEZ6V2 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.2 V, ESC | Datasheet | ||
| CUZ6V8 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 6.8 V, USC | Datasheet | ||
| CEZ5V6 | Toshiba Electronic Devices & Storage Corporation | Zener Diode, 5.6 V, ESC | Datasheet |
UD DIODE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
UDN2950Z
Abstract: UDN2935Z UDN2936W UDN2936W-120
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udn2935zudn2950zudn2936w/w-120udn2936w+1 | |
XC3030A-5PL84C
Abstract: UD10 UD09 ud02 EPM7128 XC3030 UD Series UD27 ulc xc3030 matra universal logic circuit
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65-mmstandb27300-mil150-mil+10 | |
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Contextual Info: SK 55 D SEMITOP 2 SK 55 D COOQH C=OQ N= R LL S <6477 %0+4)*.%0T C VBB @MBB C VBB @MBB <U- R VB W$T PX LL = BV PX LL = @M @ABB @ABB PX LL = @A Symbol Conditions Values Units N= U- R VB W$ LL S N= U- R @BB W$ YL S NZPQ UD[ R ML W$¥ @B &UD[ R @LB W$¥ @B &UD[ R ML W$¥ VHKIII@B &- |
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2SK2870-01LContextual Info: This material and he Information herein la the proparty of PwJI Electric Co.Ud. They shell ba neither reproduced, copied, lent, or disclosed In any way whatsoever lor the use of any third parly nor used for the manufacturing purposes without the eqiress written consent of Ftfl Electric Co.,Ud. |
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2sk2870-01l | |
2SK2871-01Contextual Info: Thl» material and the Information herein 1« the properly of Fuji Electric Co.,Ud. They »hall ba neither reproduced, copied, lent, or disclosed In any way whatsoever tor the use of any third parly nor used for the manufacturing purpose» without the aspre» written consent of Fvjl Cedric Co.,Ud. |
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2sk2871-01o-220h04-0 | |
mosfet 4502
Abstract: 2SK2874-01L
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2sk2874-q1ls2sk2874-01lmosfet 4502 | |
ESJA04-02AContextual Info: This m a te ria l and Ina Inform alion herein Is lie property of Fuji Electric Co.,Ud. They shall be neither reproduced, copied, lent, or disclosed In any way whatsoever for the use of nny third parly nor used for the m anufacturing purposes w ith o u t Ihe express wrlllen consent of Fuji Electric Co .Ud. |
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esja04-q2esja04-02aesja04-dqa | |
IC udn 2981
Abstract: UDN2983A equivalent 113A CMOS A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A
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29310eudn2981audn2984aic udn 2981+8 | |
UDN2983A equivalent
Abstract: A2982SLW A2984SLW UDN2980A UDN2981A UDN2982A UDN2982LW UDN2983A UDN2984A UDN2984LW
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29310eudn2981audn2984audn2983a equivalent+7 | |
DBA20GContextual Info: Property http://sem con.sanyo. com/en/search/property.php?clcd=149&prod=DBA20G Sa n y o semiconductor Co., Ud. S A \Y O Rectifying D io des— Single-Phase Bridge Rectifying Diodes □ sp lay a list Discrete Devices Prod uct Information Type No. DBA20G Category |
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dba20g | |
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Contextual Info: £ Z J SGS-THOMSON UD SI3 [ilLE©T^®iDiSi TMM5712 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break down voltage, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection |
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tmm571275t7s | |
fs100vs-03Contextual Info: MITSUBISHI Neh POWER MOSFET FS100VS-03 HIGH-SPEED SWITCHING USE FS100VS-03 OUTLINE DRAWING Dimensions in mm - 1 . 1- UD J 2} 0-2.54 3. t ö CM GATE DRAIN SOURCE DRAIN • 10V DRIVE [ • VDSS .30V |
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fs100vs-03100nso-220s | |
PIC Microcontroller GSM Modem
Abstract: laser diode kss GSM based home appliance control system creative sound blaster live D link adsl modem board interfacing AC motor to pic audio video uhf transmitter circuit csr LPT 2 SPI FM STEREO CODER common base mixer circuit analysis
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pic microcontroller gsm modemlaser diode kssgsm based home appliance control systemcreative sound blaster live+6 | |
UDN2961W
Abstract: UDN2961B printhead
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udn2961b/wudn2961bpp-035udn2961w+3 | |
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1N62Contextual Info: B K C INTERNATIONAL Ü3E D | 117^ 0 3 UD oooflD ~T^ 0 1 - 0 7 •=] | Type No. 1 N62 _ GOLD BONDED GERMANIUM DIODE 6 Lake Street PO Box 1436 Lawrence, MA 01841 BKC International Electronics Inc. Telephone 617 681-0392 TeleFax (617) 681-9135 Telex 928377 |
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mil-s-195001n62 | |
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Contextual Info: Property http://sem con.sanyo. com/en/search/property.php?clcd=149&prod=DBA40G Sa n y o semiconductor Co., Ud. S A \Y O Rectifying D io des— Single-Phase Bridge Rectifying Diodes □ sp lay a list Discrete Devices Prod uct Information Type No. DBA40G Category |
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dba40g | |
UDN2998W
Abstract: motor driver full bridge 20A UDN2993B 2998w UDN-2998W W108 UDN2993 3A, 50V BRIDGE UDN-2993B W-10
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udn-2998wudn2998wmotor driver full bridge 20audn2993b+6 | |
SLTNWW35066NDAUSSS
Abstract: DC90 GLAR94001
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ledrr-09006377sltnww35066ndausssdc90glar94001 | |
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Contextual Info: UD DATA CSM700 Single Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem perature range of -55°C to +125°C e.g. military applications . Devices supplied have completed rigorous |
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csm700bs90001294/mcecc20000+3 | |
RQ1E050RPContextual Info: 4V Drive Pch MOSFET RQ1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High power package. 3) 4V drive. (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Inner circuit |
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rq1e050rpr1010a | |
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Contextual Info: UD D ili CD750 Dual Channel Low Input Current High Gain Hermetically Sealed Ceramic Optocoupler BS9000, together with CECC, is a preferred standard for use in European military projects. Consequently, Isocom Ltd’s approved devices are listed in the CECC “ MUAHAG” preferred |
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cd750bs9400bs90001294/m | |
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Contextual Info: 4V Drive Pch MOSFET RT1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Packaging specifications |
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rt1e050rpr1010a | |
RT1E050RPContextual Info: 4V Drive Pch MOSFET RT1E050RP Structure Silicon P-channel MOSFET Dimensions Unit : mm TSST8 Features 1) Low on-resistance. 2) High power package. 3) 4V drive. (8) (7) (6) (5) (1) (2) (3) (4) Abbreviated symbol :UD Application Switching Packaging specifications |
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rt1e050rpr1010a | |
UDN-2954W
Abstract: UDN2954W 2954W 2953B UDN-2953B udn2953b 1.5V Voltage suppression diode rc servo motor torque s 026 stepper
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udn-2953budn-2954wudn2954w2954w+5 | |