UCOM-4 INSTRUCTION SET Search Results

Contextual Info: 1/13 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT 4Kx8 bit Electrically Erasable PROM ◇PART NUMBER BU9890GUL-W ◇PHYSICAL DIMENSION Fig.-1（VCSP50L1） ◇BLOCK DIAGRAM Fig.-2 ◇USE General purpose ◇FEATURES ・4K words × 8 bits architecture serial EEPROM

Contextual Info: 1/12 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT 256x8 bit Electrically Erasable PROM ◇PART NUMBER BU9833GUL-W ◇PHYSICAL DIMENSION Fig.-1 ◇BLOCK DIAGRAM Fig.-2 ◇USE General purpose ◇FEATURES ・ 256 registers × 8 bits serial architecture

bu9844

Contextual Info: 1/12 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT 2048x8 bit Electrically Erasable PROM ◇PART NUMBER BU9844GUL-W ◇PHYSICAL DIMENSION Fig.-1 ◇BLOCK DIAGRAM Fig.-2 ◇USE General purpose ◇FEATURES ・ 2048 words × 8 bits architecture serial EEPROM

Contextual Info: 1/13 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT １Ｋx８ ｂｉｔ ＥＥＰＲＯＭ ◇PART NUMBER ＢＵ9889GUL－Ｗ ◇PHYSICAL DIMENSION Fig.－１（VCSP50L1） ◇BLOCK DIAGRAM Fig.－２ ◇USE General purpose ◇FEATURES ・１K words × ８ bits architecture serial EEPROM

DAT00

Contextual Info: 1/11 ◇STRUCTURE Silicon Monolithic Integrated Circuit ◇PRODUCT 4Kx8 bit Electrically Erasable PROM ◇PART NUMBER BU99901GUZ-W ◇PHYSICAL DIMENSION Fig.-1（VCSP30L1） ◇BLOCK DIAGRAM Fig.-2 ◇USE General purpose ◇FEATURES ・4K words × 8 bits architecture serial EEPROM

taa900

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

MR44V064A

Abstract: PEDR44V064A-05
Contextual Info: PEDR44V064A-05 Issue Date: Oct. 17, 2011 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

Contextual Info: FEDR44V064A-01 Issue Date: Apr. 22, 2013 MR44V064A 64k 8,192-Word  8-Bit FeRAM (Ferroelectric Random Access Memory) GENERAL DESCRIPTION The MR44V064A is a nonvolatile 8,192-word x 8-bit ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon-gate CMOS technology. The MR44V064A is accessed using Two-wire

BR34L02

Abstract: BR34L02FV-W BR34L02-W
Contextual Info: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ●DESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ●FEATURES 256x8 bit architecture serial EEPROM

DC VCC RESET RESET WP SCL GND SDA

Contextual Info: TECHNICAL NOTE Plug & Play Memory series 2Kbit Serial I2C BUS EEPROM For SPD DRAM Memory Module BR34L02-W ͶDESCRIPTION BR34L02-W is 2Kbit Serial I2C BUS Electrically Erasable PROM based on Serial Presence Detect for DRAM Memory Module ͶFEATURES 256͙8 bit architecture serial EEPROM

USE OF SCL SDA LINE

Abstract: BR34L02 BR34L02FV-W
Contextual Info: TECHNICAL NOTE Plug & Play Memory series DDR/DDR2 For Memory Module SPD Memory BR34L02FV-W ●DESCRIPTION BR34L02FV-W is 256x8 bit Electrically Erasable PROM (based on Serial Presence Detect) ●FEATURES 256×8 bit architecture serial EEPROM Wide operating voltage range (1.7V～5.5V)

Contextual Info: High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS No.11001EAT23 BRCA016GWZ-W ●Description 2 BRCA016GWZ-W series is a serial EEPROM of I C BUS interface method. ●Features 2 1 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock SCL)

UPD6252

Abstract: IC-7580 toko s102 E2HD 7SI02 RBS 2111 AS15 G IC as15 G D75516 ST 9527
Contextual Info: APPLICATION NOTE ▲ Fanis* N fc L RA75X ASSEMBLER PACKAGE 111 STRUCTURED ASSEMBLER PREPROCESSOR Document No. EEA—12Ö3 0 .0 . No. EE A—803 Date Published April 199IP Printed in Japan APPLICA T/ON NOTE NEC RA75X ASSEMBLER PACKAGE STRUCTURED ASSEMBLER PREPROCESSOR

WA200

Contextual Info: High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS No.10001EAT14 BU9847GUL-W ●Description 2 BU9847GUL-W series is a serial EEPROM of I C BUS interface method. 1.7V single power source action and actions available at 400kHz. ●Features 2

TA8511

Abstract: bu9844gul-w bu9844
Contextual Info: High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS BU9844GUL-W No.10001EAT18 ●Description 2 BU9844GUL-W series is a serial EEPROM of I C BUS interface method. 1.7V single power source action and actions available at 400kHz. ●Features 2

ta8512

Contextual Info: High Reliability Series Serial EEPROMs WL-CSP EEPROM family I2C BUS BU9833GUL-W No.10001EAT17 ●Description 2 BU9833GUL-W series is a serial EEPROM of I C BUS interface method. 1.7V single power source action and actions available at 400kHz. ●Features 2

BR24A02

Abstract: BR24A-WM
Contextual Info: Serial EEPROM Series High Reliability Series EEPROMs I2C BUS No.09001EBT02 BR24A□□-WM series ●Description BR24A□□-WM series is a serial EEPROM of I2C BUS interface method. ●Features 2 1 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock SCL) and serial data(SDA)

BR24L64-W

Contextual Info: TECHNICAL NOTE High Reliability Series Serial EEPROM Series 2 I C BUS Serial EEPROMs BR24L□□-W Series BR24L01A-W, BR24L02-W, BR24L04-W, BR24L08-W, BR24L16-W, BR24L32-W, BR24L64-W BR24S□□□-W Series BR24S16-W, BR24S32-W, BR24S64-W, BR24S128-W, BR24S256-W

AN232-07

Abstract: DLP-USB245M AN232-03 VID_0403
Contextual Info: DLP-USB245M User Manual Design USB to FIFO Parallel Interface Module The DLP-USB245M is the 2nd generation of DLP Design’s USB adapter. This device adds extra functionality to it’s DLP-USB1 predecessor with a reduced component count and a new low price.

Contextual Info: High Reliability Series Serial EEPROM Series I2C BUS Serial EEPROMs BR24A01A-WM, BR24A02-WM, BR24A04-WM, BR24A08-WM, BR24A16-WM, BR24A32-WM, BR24A64-WM ●Description 2 BR24A□□-WM series is a serial EEPROM of I C BUS interface method. ●Features 2 ・ Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock SCL and serial

1616K

Contextual Info: Serial EEPROM Series High Reliability Series EEPROMs I2C BUS No.09001ECT02 BR24A□□-WM series ●Description BR24A□□-WM series is a serial EEPROM of I2C BUS interface method. ●Features 2 1 Completely conforming to the world standard I C BUS. All controls available by 2 ports of serial clock SCL) and serial data(SDA)

BR24L01A-W

Abstract: BR24L02-W BR24L04-W BR24L08-W BR24L16-W BR24L32-W BR24L64-W BR24L-W
Contextual Info: Serial EEPROM Series High Reliability Series EEPROMs I2C BUS BR24L□□-W Series,BR24S□□□-W Series No.09001EBT04 ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold

BR24S128

Abstract: BR24L01A-W BR24L02-W BR24L04-W BR24L08-W BR24L16-W BR24L32-W BR24L64-W BR24S256-W
Contextual Info: Serial EEPROM Series High Reliability Series EEPROMs I2C BUS BR24L□□-W Series,BR24S□□□-W Series No.09001EDT04 ROHM's series of serial EEPROMs represent the highest level of reliability on the market. A double cell structure provides a failsafe method of data reliability, while a double reset function prevents data miswriting. In addition, gold pads and gold

Contextual Info: TECHNICAL NOTE Double-cell Memory for Plug & Play DDR1 For memory module SPD Memory BR34L02FV-W ●Description BR34L02FV-W is 256x8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features 1. 256×8 bit architecture serial EEPROM 2. Wide operating voltage range: 1.7V-5.5V