UCH 21 Search Results

schematic diagram 48v dc convertor

Contextual Info: Single Output UCH Models www.murata-ps.com Isolated, “Half-Brick” 1.8−15V Output DC/DC Converters FEATURES „ Standard “half-brick” configuration „ Designed to meet UL/EN60950-1 safety approvals BASIC insulation „ Fully isolated, 2250Vdc guaranteed

Contextual Info: Single Output UCH Models www.murata-ps.com Isolated, “Half-Brick” 1.8−15V Output DC/DC Converters PRODUCT OVERVIEW PROD Typical Unit hig efficiency, low noise and long-term The high reliability reliabilit that defines DATEL DC/DC Converters now comes

PMW controller

Contextual Info: Single Output UCH Models www.murata-ps.com Isolated, “Half-Brick” 1.8−15V Output DC/DC Converters PRODUCT OVERVIEW impressive efficiencies. Output voltages are 1.8 to 15 Volts. The input voltage range is 36 to 75 or 18 to 36 Volts. All models meet the Low Voltage

uch 81

Abstract: MPS 1005 67D4
Contextual Info: Single Output UCH Models www.murata-ps.com Isolated, “Half-Brick” 1.8−15V Output DC/DC Converters PRODUCT OVERVIEW PROD Typical Unit high efficiency, low noise and long-term reliThe hig ability tthat defines Murata Power Solutions’ DC/ Converters now comes to you in the standard

Contextual Info: DESCRIPTION The SP 9548 is a 12-bit, 500 nanosecond, analog-todigital converter em ploying the SIPEX state-of-the-art Multipass subranging Flash technology while co nsu m ­ ing m uch less than 2 Watts. The subranging Multipass process is optim ized for low pow er operation by multi­

Contextual Info: Ê * IMP5225 vv 18-Line SCSI Terminator ISO 9001 Registered KEY FEATURES DESCRIPTION T h e IM P 5 2 2 5 S C S I terminator is part o f IM P's fam ily o f high-performance, adaptive, non-linear T h e IM P 5225 architecture is m uch more tolerant o f marginal system integrations. A key

balanced modulator ic 1496

Abstract: ULN2111 NE510 B628 Video Amplifier 733 8250s C1496
Contextual Info: Communications Circuits INTRODUCTION The fo llo w in g c h a p te r w ill c o ve r those de­ vices w hich can be referred to as c o m m u n i­ ca tio n s c irc u its . S uch devices as balanced m o dulato rs, R F/IF a m plifiers, and video a m p lifie rs are includ ed. M any o th e r devices

Contextual Info: LIN D oc # ; 5218 L X 5 2 1 8 /L X 5 2 1 9 \t I T h e I n f i n i t e \< < > I P I o w e r I ( I k U I o f \ (. i ULTRA n n o v a t i o n P 9 - C hannel SCSI D r o d u c t i o n DESCRIPTION is m uch more tolerant o f marginal system inte­ technology for SCSI termination applications. The

AN2795

Abstract: AN2684 VNI4140K UCH 21
Contextual Info: AN2795 Application note VNI4140K load test report Introduction The tests described in this application note were carried out to check the VNI4140K parameters and driving capabilities of different types of problematic loads such as bulb and inductor. The VNI4140K device is a quad high-side smart power state relay intended for driving four

2SA1526

Abstract: 2SC3920
Contextual Info: Ordering number : EN 2150A 2SA1526/2SC3920 N 0 .2 1 5 O A PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistance i Applications . Switching circuits, inverter circuits, interface circuits, driver circuits Features . On-chip bias resistance (Ri = 10kQ,R2 = 10ki2)

Discharge

Abstract: "defibrillator" capacitor 1400V
Contextual Info: Medium Power Film Capacitors FD RoHS Compliant GENERAL DESCRIPTION FD series use metallized dielectric, controlled self-healing technology, high specific energy. USUAL APPLICATIONS The FD capacitors are designed for discharge applications such as Laser, electronic flash, cardiac defibrillator, etc.

defibrillator

Abstract: laser diode lifetime 100000 "defibrillator"
Contextual Info: Medium Power Film Capacitors FD RoHS Compliant GENERAL DESCRIPTION FD series use metallized dielectric, controlled self-healing technology, high specific energy. USUAL APPLICATIONS The FD capacitors are designed for discharge applications such as Laser, electronic flash, cardiac defibrillator, etc.

MOC30XX

Contextual Info: <^E.mi-L,onaiL 2toi LPi , Line. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Trlacs Silicon Bidirectional Thyrlstor* . . . dadgned for Ml wavn ac power control application*, and specifically d«ggn«4l

MPS-U95

Abstract: PSU45
Contextual Info: ^Products., Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MPS-U95 (SILICON) PNP SILICON DARLINGTON TRANSISTOR PNP SILICON DARLINGTON AMPLIFIER TRANSISTOR . . . designed for amplifier and driver applications.

2062A

Abstract: 2SK2167 500D
Contextual Info: Ordering number: EN 4631 2SK2167 No.4631 N-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu re s • Low ON resistance. •Very high-speed switching. * Low-voltage drive. bsolute M axim um R atin g s a t Ta = 25°C Drain-to-Source Voltage

2164

Abstract: v 2164 NJM2162D NJM2182V DB20A
Contextual Info: NJM2162/2164 P a g J-F E T INPUT OPERATIONAL AMPLIFIER • GENERAL DESCRIPTION PACKAGE OUTLINE T he N JM 2 162/64 com bines featu re o f the N JM 062/064 as w ell as and providing the capability o f w ider b andw idth and hig h er slew rate. It is suitable fo r teleco m ap p licatio n activ e filters etc. .

Contextual Info: é l a n t e c e l 2 1 7 s c 120mhz Precision Current Mode Feedback Amplifier highperformanceAN*LKiNTEGRATEocirquits Features General Description • 3 0 M Q transim pedance . 142M H z -3dB b a ndw idth A V = +1 . 120M H z -3dB b a ndw idth (A V = +2) • 1 m V in p u t o ffset voltage

Contextual Info: ADE-207-052 HA13150 21 W x 4-Channel BTL Power IC HITACHI Preliminary SepRî99? Description Features H A 13150 is a four-channel BTL amplifier IC designed for car audio, featuring high output and low distortion, and applicable to digital audio equipment. It provides 21 W output per channel,

Contextual Info: APPLICATION DATA ETI-195 PA GE 1 4-45 GENERAL 0 ELECTRIC RESISTANCE VACUUM GAGES E T I-195 PAGE 2 4-45 DESCRIPTION T he FA-13 and 14, used in a resistance vacuum gage possess features especially useful in providing a convenient m ethod for m easuring low gas pres­

IGT8D20

Abstract: TRANSISTOR BIPOLAR 400V 20A IGT8E20
Contextual Info: Insulated-Gate Bipolar Transistors IGT8D20, IGT8E20 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2129 TER M IN A L DIAGRAM 20A, 400V and 500V Tds on = 0.12 O Features: • Low I/ c e is a t ) — 2.3V typ. @ 20A

Contextual Info: élantec sunsc MSMmoMi«NeEAMuosMTEGMTtociAcu!is 120mhz Precision Current Mode Feedback Amplifier Features General Description • 3 0 M Q transim pedance • 1 4 2 M H z-3 d B bandw idth AV = + 1 • 120M H z -3dB b a ndw idth (AV = +2) • 1 m V in p u t o ffse t voltage

Contextual Info: Ordering number : ENN6943 P-Channel Silicon MOSFET MCH6305 Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Package Dimensions unit : mm 2193 [MCH6305] 0 . 15 . floiLiin UM 2LJ3U 0.65 1 2

machlett x-ray tube

Abstract: Raytheon Company cathode ray machlett x-ray tube 59 F-21987
Contextual Info: P R O D U C T DATA Machletl A Raytheon Company ^ ^ r^ M L -L P T 4 5 ‘ ML-LPT 45rti ORDERING NOTES Refer to M achlett price lis t. W hen o rd ering s p e c ify • tu b e type • a c c e sso rie s sm a ll fila m e n t c o n n e c to r F-21989 large fila m e n t c o n n e c to r

IGT4E11

Abstract: IGT4D11 92CS-39928 CIMax
Contextual Info: Insulated-Gate Bipolar Transistors IGT4D11, IGT4E11 F ile N u m b e r N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 2124 TER M IN A L DIAGRAM 10A, 400V and 500V Tds on = 0.27 f i Features: • L o w 1/ c e i s a t i — 2.5V typ. @ 10A