UBP 100 Search Results

Sensotec pressure transducer

Abstract: Sensotec transducer Sensotec pressure wiring diagrams sensotec Sensotec transducer A Sensotec 60 pressure transducer Sensotec 42 Sensotec 43 Sensotec Pressure transducer A "Pressure Transducers" sensotec
Contextual Info: MODEL UBP UNIVERSAL IN-LINE TRANSDUCER AMPLIFIER BI-POLAR SUPPLY, VOLTAGE OUTPUT, LOW GAIN 5 to 166 mV/V 2080 Arlingate Lane, Columbus, Ohio 43228 • (614) 850-5000 Sensotec, Inc. 2080 Arlingate Lane Columbus, Ohio 43228 Copyright 1995 by Sensotec, Inc. all rights reserved

Contextual Info: Mat i ng face arc. tn I FT If chiplpx FO m u l t i mode 50/125 p 617S4-90 ExED Y HEE P r o t e c t i on c a p i_o Heat shrink t ubp/ t& □ KO=> P r o t e c t ion l e v e l : I P20 T e m p e r a t u r e r a n g e : -10° C . . . + 7 0 ° C 11 33012410500005

Contextual Info: UbP¥ } 2 3105 K a sh iw a C o u rt Torrance. C A 9 0505 Phone: 800 5 7 9 -4 8 7 5 /(3 1 0 ) 534.1505 Fax (3 1 0 )5 3 4 .1 4 2 4 E -m ail w ebm aster@ led tro nics co m W ebsite: v a v w ledtrontcs com LEDTRONICS, INC: THE FUTURE OF LIGHT L u m in a ire P h o to m e tric R ep ort

TC4001UBP

Abstract: tc4011bp applications TC4011UBP IC - TC4001BP
Contextual Info: C2MOS DIG IT A L IN T E G R A T E D CIRCUIT S ILIC O N M O N O L IT H IC TC4001UBP, TC4011UBP TC4001UBP QUAD 2 INPUT NOR GATE TC4011UBP QUAD 2 INPUT NAND GATE TC4001UBP and TC4011UBP are 2 input NOR gate and 2 input NAND gate respectively. The pin connections

e2p 25

Abstract: J-STD-020B M30L0R7000B0 M30L0R7000T0 M36L0R7040B0 M36L0R7040T0 M69AR024B
Contextual Info: M36L0R7040T0 M36L0R7040B0 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 16 Mbit (1Mb x16) Pseudo SRAM

M69KR096A

Abstract: J-STD-020B M30L0R8000B0 M30L0R8000T0 M36L0R8060B0 M36L0R8060T0
Contextual Info: M36L0R8060T0 M36L0R8060B0 256 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package PRELIMINARY DATA FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory

M36P0R9070E0

Abstract: M58PR512J M69KB128AB
Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

TC4069 OSCILLATOR

Abstract: Toshiba TC4069 TC4069 TC4069UB tc4069ubp DIP14-P-300-2 TC4069UBF TC4069UBFN TC4069UBFT TC4069ubp japan
Contextual Info: TO SH IBA TC4069UB P/UBF/U BFN/U BFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC4069UBP, TC4069UBF, TC4069UBFN, TC4069UBFT Note The JEDEC SOP (FN) is not available in Japan TC4069UB HEX INVERTER TC4069UB contains six circuits of inverters. Since the

M36P0R8070E0

Abstract: M58PR256J M69KB128AA strataflash 256 x 2 Mbits ECR15
Contextual Info: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM

PSRAM

Abstract: M36P0R9060E0 M58PR512J M69KB096AM M58PRxxxJ
Contextual Info: M36P0R9060E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

M30L0T7000T0

Abstract: J-STD-020B M36L0T7050B0 M36L0T7050T0 M69AW048B Flash Memory 32Mbit M30L0T7000
Contextual Info: M36L0T7050T0 M36L0T7050B0 128Mbit Multiple Bank, Multi-Level, Burst Flash Memory 32Mbit (2M x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128Mbit (8Mx16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32Mbit (2Mx16) Pseudo SRAM

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT ubp 100
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

Contextual Info: M36P0R8070E0 256 Mbit x16, multiple bank, multilevel, burst Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package Features • ■ Multichip package – 1 die of 256 Mbit (16 Mb x 16, multiple bank, multilevel, burst) Flash memory – 1 die of 128 Mbit (8 Mb x16) PSRAM

23LIST

Contextual Info: M36P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash memory 128 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash Memory – 1 die of 128Mbit (8Mb x16) PSRAM

M36L0R7050U3

Abstract: M69KM024A M36L0R7050UL3 ADQ14 M36L0R8060L3 Numonyx MCP M69KM048AB
Contextual Info: M36L0Rx0x0UL3 128- or 256-Mbit mux I/O, multiple bank, multilevel, burst flash memory, and 32- or 64-Mbit PSRAM, 1.8 V supply MCP Target Specification Features • ■ ■ Multichip package – 1 die of 128 Mbits (8 Mbits x16) or 256 Mbits (16 Mbits x16), mux I/O multiple

m36w0r6050u

Abstract: M36W0R M36W0R605 M58WR064HUL 221 ball MCP
Contextual Info: M36W0R6050U0 M36W0R6050L0 64-Mbit mux I/O, multiple bank, burst flash memory 32-Mbit PSRAM, 1.8 V supply MCP Features • Multichip package – 1 die of 64 Mbit (4 Mb x16, mux I/O multiple bank, burst) flash memory – 1 die of 32 Mbit mux I/O, burst PSRAM

M36L0T7060B

Abstract: M36L0T7060 TFBGA88 M69KW096B DSA0042593 flash E2p M58LT128HB M58LT128HT M36L0T7
Contextual Info: M36L0T7060T2 M36L0T7060B2 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (4 Mb x16) PSRAM, multichip package Preliminary Data Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash Memory

PSRAM

Abstract: M36L0R7060B1 M36L0R7060T1 M58LR128HB M58LR128HT M69KB096AM
Contextual Info: M36L0R7060T1 M36L0R7060B1 128 Mbit Multiple Bank, Multilevel, Burst Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package Features • ■ ■ ■ Multichip package – 1 die of 128 Mbit (8 Mb x16, Multiple Bank, Multilevel, Burst) Flash memory

8811h

Abstract: flash E2p A0-A21 J-STD-020B M36D0R6040T0 M69AR024B
Contextual Info: M36D0R6040T0 M36D0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Page Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM • SUPPLY VOLTAGE

M36LLR8760x1

Abstract: M36LLR8760T1 M30L0R8000 PSRAM RAM 2112 256 word M36LLR8760B1 M36LLR8760D1 M36LLR8760M1 M69KB096AA
Contextual Info: M36LLR8760T1, M36LLR8760D1 M36LLR8760M1, M36LLR8760B1 256 + 128 Mbit Multiple Bank, Multi-Level, Burst Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package TARGET SPECIFICATION FEATURES SUMMARY • ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 256 Mbit (16Mb x16, Multiple

Flash Memory 32Mbit

Contextual Info: M36W0T7050T0 M36W0T7050B0 128Mbit Multiple Bank, 8Mb x 16, Burst Flash Memory 32Mbit (2M x16) PSRAM, Dual Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM

M36W0R6040T

Abstract: A0-A21 J-STD-020B M36W0R6040B0 M36W0R6040T0 M69AR024B
Contextual Info: M36W0R6040T0 M36W0R6040B0 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package FEATURES SUMMARY • ■ ■ ■ ■ MULTI-CHIP PACKAGE – 1 die of 64 Mbit (4Mb x 16) Flash Memory – 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM

J-STD-020B

Abstract: M36W0T7050B0 M36W0T7050T0 M69AW048B
Contextual Info: M36W0T7050T0 M36W0T7050B0 128Mbit Multiple Bank, 8Mb x 16, Burst Flash Memory 32Mbit (2M x16) PSRAM, Dual Supply, Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Burst) Flash Memory – 1 die of 32 Mbit (2Mb x16) Pseudo SRAM

Numonyx

Abstract: A0-A21 M36W0R6050B1 M36W0R6050T1
Contextual Info: M36W0R6050T1 M36W0R6050B1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 32 Mbit (2 Mb ×16) PSRAM, multi-chip package Features • Multi-Chip Package – 1 die of 64 Mbit (4 Mb × 16) Flash memory – 1 die of 32 Mbit (2 Mb × 16) Pseudo SRAM