UB MARKING Search Results

KDR720E

Abstract: marking Ub UB marking
Contextual Info: SEMICONDUCTOR KDR720E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking UB 1 No. 2005. 7. 4 Item Marking Description Device Mark UB KDR720E Revision No : 0 1/1

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: MC14011UB CD4000 MC14001UB MC14001UBCP MC14001UBD MC14001UBDR2 MC14011UBCP MC14011UBD MC14011UBDR2
Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: CD4000 MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: CD4000 MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: MC14011UBCPG CD4000 MC14001UB MC14001UBCPG MC14001UBDG MC14001UBDR2G MC14011UB MC14011UBDG MC14011UBDR2G
Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

mc14001ub

Abstract: mc14011ub
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

CD4000

Abstract: MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB MC14011UBCPG
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: MC14001UBCP CD4000 MC14001UB MC14001UBD MC14001UBDR2 MC14011UB MC14011UBCP MC14011UBD
Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

Contextual Info: SEMICONDUCTOR KDS126T MARKING SPECIFICATION TS6 PACKAGE 1. Marking method Laser Marking UB 1 No. JA 2. Marking 2 Item Marking Description Device Mark UB KDS126T * Lot No. JA 2005. 1st Week [ 0 : 1st Chracter, 1:2nd Character ] Note * Lot No. marking method

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

Contextual Info: SEMICONDUCTOR KDS126U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking UB 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark UB KDS126U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

KDS126E

Contextual Info: SEMICONDUCTOR KDS126E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking UB 1 0 1 2. Marking 2 3 No. Item Marking Description Device Mark UB KDS126E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Index

100UF 10V C

Abstract: tan mark
Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. High Temperature UB UX Specifications Item Performance Characteristics Category Temperature Range

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Operating Temperature Range

marking L03

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

"red led" 5mm

Abstract: DPDT 6 terminal window switch momentary switch DPDT 6 terminal switch contactor 400 A led lens yellow 3mm red yellow gold gold resistor yellow led 5mm contactor 100 A led 1,6 x 0,8 white
Contextual Info: Series UB Low Profile Pushbutton Switches TYPICAL SWITCH ORDERING EXAMPLE UB 1 2 1 5 SK POLES MOUNTING TYPES SPDT DPDT PCB Mounting Square Rectangular * Snap-in Mounting KK Square NK Rectangular Rectangular with NBK Side Barriers * Standard with solder lug

Contextual Info: nicHicon ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability senes Chip type, high tem perature range, for + 1 2 5 °C use. Applicable to autom atic m ounting m achine using ca rrie r tape. UB u x iSpecifications Performance Characteristics Item

VT18-8-H-120-M

Abstract: 112-LED
Contextual Info: Elektrischer Anschluss Option: 1 Adressen/Addresses Electrical connection Option: /128 1 +UB Reflexions-Lichttaster mit Hintergrundausblendung Diffusive sensor with background suppression /128 +UB VT18-8-H-120-M/40a/65b/118/128 2 n. c. 2 n. c. 3 0V 3 0V U

330 EL MARKING 5PIN

Abstract: 91955
Contextual Info: Adressen/Addresses Electrical connection /47 Option: Reflection light scanner with background suppression /47 Option: 1 +UB 1 +UB 2 Q 2 Q 3 0V 3 0V 4 Q 4 Q Deutschland: Great Britain: USA: France: España Italia 5 n.c. 5 n.c. Singapore ! = dunkellschaltend, " = hellschaltend