UB 40 Search Results

Contextual Info: FREQUENCY RANGE MHz ISOLATION (dB) LB TYP/MIN 25/20 35/30 30/25 28/23 0.01-20 1-200 5-200 5-400 f/iiO AMPLITUDE UNBALANCE (dB) MB TYP/MIN UB TYP/MIN LB TYP/MAX MB TYP/MAX UB TYP/MAX LB MAX MB MAX UB MAX LB MAX MB MAX UB MAX 30/25 35/25 30/25 28/23 27/23

synergy djf

Contextual Info: 180º HYBRIDS 3 - PORT FLAT-PACK FREQUENCY RANGE MHz LF-HF 5-200 5-400 ISOLATION (dB) INSERTION LOSS (dB) PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) PIN-OUT PACKAGE LB TYP/MIN MB TYP/MIN UB TYP/MIN LB TYP/MAX MB TYP/MAX UB TYP/MAX LB MAX MB MAX UB

RESISTOR 472 j

Abstract: rectangular blue led w03 5d AT4119 cap 472
Contextual Info: UB Indicators Complement to UB Pushbuttons TYPICAL INDICATOR ORDERING EXAMPLE UB 01 MOUNTING TYPES PCB Mounting 01 Square 03 Rectangular K W03 K Square 06 Rectangular 06B Rectangular with Side Barriers JC CAP TYPES & COLORS HOUSING Black Full Face Illuminated Cap

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: MC14011UB CD4000 MC14001UB MC14001UBCP MC14001UBD MC14001UBDR2 MC14011UBCP MC14011UBD MC14011UBDR2
Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

sensor optico

Abstract: 57m3 IND. CONT. EQ optico CA1300
Contextual Info: Elektrischer Anschluss Electrical connection Sender Emitter BN +UB BN Adressen/Addresses Einweg-Lichtschranke thru-beam sensor +UB GD18/GV18/59/102/115 BU 0V BU 0V U LISTED 57M3 IND. CONT. EQ. CLASS 2 CIRCUIT ONLY 102 Receiver BN +UB BU 0V BU 0V BK Q BK

MC14001

Abstract: CD4000 MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: CD4000 MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

MC14001

Abstract: MC14011UBCPG CD4000 MC14001UB MC14001UBCPG MC14001UBDG MC14001UBDR2G MC14011UB MC14011UBDG MC14011UBDR2G
Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

DSK-702

Abstract: SD-3 POWER DIVIDERS DSS-927 DSS-928 DSS-929 M2D1822 M2D2025 M2D810 SDL-173 SPD-C10
Contextual Info: POWER DIVIDERS 0º : 2-WAY LEADLESS SURFACE-MOUNT INSERTION LOSS dB ISOLATION (dB) FREQUENCY RANGE 133 LB TYP/MAX MB TYP/MAX 134 PHASE UNBALANCE (Degrees) LB MB UB MAX MAX MAX UB TYP/MAX AMPLITUDE UNBALANCE (dB) LB MB UB MAX MAX MAX LB TYP/MIN MB TYP/MIN

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

Contextual Info: MC14001UB, MC14011UB UB-Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

mc14001ub

Abstract: mc14011ub
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

CD4000

Abstract: MC14001UB MC14001UBCP MC14001UBCPG MC14001UBD MC14001UBDG MC14001UBDR2 MC14001UBDR2G MC14011UB MC14011UBCPG
Contextual Info: MC14001UB, MC14011UB UB−Suffix Series CMOS Gates The UB Series logic gates are constructed with P and N channel enhancement mode devices in a single monolithic structure Complementary MOS . Their primary use is where low power dissipation and/or high noise immunity is desired. The UB set of

DSK-702

Abstract: DSP-2B1 DSS-927 DSS-928 DSS-929 M2D1822 M2D2025 M2D810 SDL-173 SPD-C10
Contextual Info: POWER DIVIDERS 0º : 2-WAY LEADLESS SURFACE-MOUNT INSERTION LOSS dB ISOLATION (dB) FREQUENCY RANGE 133 LB TYP/MAX MB TYP/MAX 134 PHASE UNBALANCE (Degrees) LB MB UB MAX MAX MAX UB TYP/MAX AMPLITUDE UNBALANCE (dB) LB MB UB MAX MAX MAX LB TYP/MIN MB TYP/MIN

LB 122 transistor

Abstract: LB 122 8 pin relay lb 122 s Lb 203 HF relay SJL-123 SMJ-C5 BNC T connectors INSERTION LOSS djp-205
Contextual Info: 180º HYBRIDS 3 - PORT SURFACE-MOUNT FREQUENCY RANGE MHz ISOLATION (dB) INSERTION LOSS (dB) PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) PIN-OUT PACKAGE LF-HF LB TYP/MIN MB TYP/MIN UB TYP/MIN LB TYP/MAX MB TYP/MAX UB TYP/MAX LB MAX MB MAX UB MAX LB

Contextual Info: 180º HYBRIDS 3 - PORT SURFACE-MOUNT FREQUENCY RANGE MHz ISOLATION (dB) INSERTION LOSS (dB) PHASE UNBALANCE (Degrees) AMPLITUDE UNBALANCE (dB) PIN-OUT PACKAGE LF-HF LB TYP/MIN MB TYP/MIN UB TYP/MIN LB TYP/MAX MB TYP/MAX UB TYP/MAX LB MAX MB MAX UB MAX LB

DSP302

Abstract: DSP202
Contextual Info: POWER DIVIDERS 0º : 2-WAY LEADLESS SURFACE-MOUNT INSERTION LOSS dB ISOLATION (dB) FREQUENCY RANGE 133 LB TYP/MAX MB TYP/MAX 134 PHASE UNBALANCE (Degrees) LB MB UB MAX MAX MAX UB TYP/MAX AMPLITUDE UNBALANCE (dB) LB MB UB MAX MAX MAX LB TYP/MIN MB TYP/MIN

Contextual Info: POWER DIVIDERS 0° : 2-WAY n C o a x ia l C o n n e c t o r ISOLATION dB FREQUENCY RANGE 144 110 INSERTION LOSS (dB) PHASE UNBALANCE (Degrees) LB UB UB MAX MAX MAX 164 AMPLITUDE UNBALANCE (0B) LB MB UB MAX MAX MAX PIN-OUT (See Below) PACKAGE MODEL LB TYP/MIN

VT18-8-H-120-M

Abstract: 112-LED
Contextual Info: Elektrischer Anschluss Option: 1 Adressen/Addresses Electrical connection Option: /128 1 +UB Reflexions-Lichttaster mit Hintergrundausblendung Diffusive sensor with background suppression /128 +UB VT18-8-H-120-M/40a/65b/118/128 2 n. c. 2 n. c. 3 0V 3 0V U

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

optico

Abstract: 57m3 IND. CONT. EQ
Contextual Info: Elektrischer Anschluss /120 Option: BN Adressen/Addresses Electrical connection BN Energetic diffuse mode sensor /120 Option: +UB Reflexions-Lichttaster energetisch Festkabel 2 m +UB fixed cable 2 m GLV18-8-400-S/115/120 WH Q WH Q BU 0V BU 0V U LISTED 57M3

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UB Chip Type, High Reliability series Chip type, high temperature range, for +125°C use. Applicable to automatic mounting machine using carrier tape. UB High Reliability UX Specifications Item Performance Characteristics Category Temperature Range