UAA 190 Search Results

UAA 146

Abstract: UAA 190 UAA 170 equivalent CY7C0430V UAA 170 C6354
Contextual Info: 30V CY7C0430V PRELIMINARY 3.3V 64K x 18 Synchronous QuadPort Static RAM Features • True four-ported memory cells which allow simultaneous access of the same memory location • Synchronous Pipelined device — 64K x 18 organization • Pipelined output mode allows fast 133-MHz operation

UAA 146

Abstract: UAA 190 E-Vision User Guide CY7C0430BV CY7C04312BV CY7C04314BV Y043XXBV
Contextual Info: CY043XXBV: 12/98 Revision: August 15, 2001 CY7C0430BV CY7C04312BV CY7C04314BV PRELIMINARY 10 Gb/s 3.3V QuadPort DSE Family Features • QuadPort™ Datapath Switching Element DSE devices allows four independent ports of access for data path management and switching.

UAA 146

Abstract: UAA 180 L1118 UAA 170 CY7C0430BV CY7C04312BV CY7C04314BV
Contextual Info: CY7C0430BV CY7C04312BV CY7C04314BV 10 Gb/s 3.3V QuadPort DSE Family Features • QuadPort™ datapath switching element DSE family allows four independent ports of access for data path management and switching • High-bandwidth data throughput up to 10 Gb/s

Contextual Info: CY7C0430BV CY7C04312BV CY7C04314BV 10 Gb/s 3.3V QuadPort DSE Family Features • QuadPort™ datapath switching element DSE family allows four independent ports of access for data path management and switching • High-bandwidth data throughput up to 10 Gb/s

Contextual Info: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.

M-phy Differential peak-to-peak output voltage

Abstract: A3838
Contextual Info: January 2002 DS92UT16TUF UTOPIA-LVDS Bridge for 1.6 Gbps Bi-directional Data Transfers 1.0 General Description The DS92UT16 is a flexible UTOPIA to LVDS Bridge device. The LVDS Bridge transparently transports the UTOPIA bus over a high speed LVDS serial link. The device includes

Rubycon Aluminum Electrolytic

Abstract: rubycon sev uaa 1300
Contextual Info: SEV MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS SEV SERIES 85℃, Lead Free Reflow Soldering. ◆FEATURES • Case Dia φ3~φ18mm • Lead free reflow soldering is available. • Available for high density mounting. • RoHS compliance. ◆SPECIFICATIONS

Contextual Info: RFH RF2641 I MICRO-DEVICES CDMA UPCONVERTER/BPSK MODULATOR Typ ical A p plications • PCS/Cellular CDMA Systems • BPSK Modulation • PHS 1 5 0 0 /WLAN 2400 Systems • Micro-Cell PCS Base Stations • General Purpose Upconverter • Portable Battery Powered Equipment

uaa 3100

Contextual Info: X ^ R IN TER N A TIO N A L R E C T IF IE R • 4Ô55M52 DQIOIHS 4 ■ ~T~Ò \“ Ä R77R SERIES 3000-2400 VOLTS RANGE 3800 AMP AVG HOCKEY PUK DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS_ : s î t • i s j J 1 ¡ PART

Contextual Info: 16 15 12 14 K li § 15 3 9 .1 5 ± 0.3 4 .2 & 0 1 .4 17x 4 .2 + s e 7 2 3 4 0 * 2 = 7 1 .4 felO o LJ 46x / A I0 . 2 IB / A a CM @=• 1 ^ i? l| ^ l| ^ l! ^ | l^ | l^ | l^ | l^ i? ! ! ^ i? i| ^ l| ^ i| ^ l| ^ ! ! ^ | l^ i? l a s la liifiii ^ [ i i l ^ i l ^ i j ^ l i ^ l i ^ l i ^ i i ^ i i ^ i l ^ i l ^ i l ^ i i i T ^ i i i T ^ l i i T ^ i&iia isilsi

Contextual Info: 4855452 INTERNATIONAL RECTIFIER I« R 73C 07143 D. T z O f * ’ '¿-3 Data Sheet no. k u - z . i 33 INTERNATIONAL RECTIFIER 73 DE | MflSii4ic! UUUV143 T R18C, R18S, R18CR & R18SR SER IES 1800 - 1200 VOLTS RANGE 185 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIO DES

Contextual Info: MOTOROLA Order thle document by MHPM7B12A120A/D SEMICONDUCTOR TECHNICAL DATA MHPM7B12A120A Hybrid Power Module Motorola Pwfttrod Dovtco Integrated Power Stage for 2.0 hp Motor Drives This module Integrates a 3-phase Input rectifier bridge, 3-phase output Inverter and brake transistor/diode In a single convenient package. The output

Porch

Contextual Info: /V Y w T v '/VIDE BAN DW ID TH VIDEO AMPLIFIER SYSTEM ß Q 1 I IUI S . K E N N E D Y C O N I ’ 8170 Thompaon Road Cicero, N.Y. 13039 315 699-9201 FEATURES: MIL-STD-7772 CERTIFIED • 230 MHz VTdeo Bandwidth With Vout-4Vpp • H-anaition TImea Lsaa Than 2.0nS With Vout-4Vpp

Contextual Info: INTERNATIONAL RECTIFIER IO R 73 D E | 4 â 5 5 4 5 5 ODDTOT? fc. | T-2-5-2.Ö Data Sheet No. PD-3.175 in t e r n a t io n a l r e c t if ie r S52KF SERIES 2000-1800 VOLTS RANGE STANDARD TURN-OFF TIME 60 / j s 1500 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE HOCKEY PUK SCRs

RTM 866 - 480

Abstract: SAK 110 TAA775G ITT TCA 700 Y SAJ 220 SG 2368 ITT 90 38 TCA 700 Y SAJ110 TCA 430 taa790
Contextual Info: Halbleiter­ bauelemente 1972/73 INTERMETALL H albleiterwerk der Deutsche ITT Industries GmbH ITT Alphabetisches Typenverzeichnis Typ S eite Typ S eite Typ Seite 1 N 914 42 2 N 3055 38 BB 121 1 N914A 1 N914B 1 N 3604 42 42 42 2 N 3962 33 BB 122 2 N 3963 2 N 3964

Contextual Info: 1.5SMC6V8 . 1.5SMC440A 1.5SMC6V8C . 1.5SMC250CA 1500 W Surface Mount Transient Voltage Suppressor Voltage 6.8 V to 440 V Uni 6.8 V to 250 V (Bid) DO-214AB / SMC Power 1500 W /ms R FEATURES • Low profile package • Ideal for automated placement

3RP10

Contextual Info: im s iu i\ii\ii i Y i:n m ’ ULTRA HIGH SPEED/VOLTAGE 1 Q VIDEO AMPLIFIER "1 O o tn lh o 8170 Thompson Road Q e tm N.Y. 13039 315) 899-9201 FEATURES: • Low Cost Complstt Amplifier Systtm • 10OVpp Output Signal Intb 10pF • Ultra Fast Transition Tlmaa - 2.0nS

PD22148

Contextual Info: DATA SH EET NEC MOS INTEGRATED C IR C U IT BfCTRON DEVICE /¿PD22100,/<PD22148 C R O S S P O IN T S W IT C H W IT H C O N T R O L M E M O R Y C M O S 1C The ¿iPD22100 consists of 16 crosspoint switches organized in 4 rows and 4 columns, and the ¿ PD22148 con­

Contextual Info: [P F S O M C T P P E ^ D E W in t e l 80C188EB-16, -13, -8 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSOR • Full Static Operation • True CMOS Inputs and Outputs • - 40°C to -i- 85°C Operating Tem perature Range • Low System C ost 8-Bit Interface • Integrated Feature Set

MH1SS1

Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Contextual Info: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik

502a hall sensor

Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Contextual Info: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview

Contextual Info: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications

Contextual Info: TMS28F512A 524288-BIT FLASH MEMORY SMJS514A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 64K x 8-Blt Flash Memory All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access / Minimum Cycle Time ’28F512A-10 100 ns ’28F512A-12 120 ns

Contextual Info: M HY51C1000 HYUNDAI • ■ SEMICONDUCTOR îvixi-Bit t\io s dram M131202B-APR91 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CMOS dynamic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast