UA 072 Search Results

Contextual Info: Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: • TO-18 TO-206AA , Surface mount UA & UB Packages Commerical JANS

BR 2N2222A NPN

Contextual Info: Radiation Hardened NPN Silicon Switching Transistors 2N2221A, 2N2221AL, 2N2221AUA, 2N2221AUB 2N2222A, 2N2222AL, 2N2222AUA, 2N2222AUB Features • Qualified to MIL-PRF-19500/255 • Levels: • TO-18 TO-206AA , Surface mount UA & UB Packages JANSM-3K Rads (Si)

Contextual Info: RA3505 thru RA3510 I nternational S em ico nducto r , I nc . HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 V olts FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100 °C

Diode LT 228d

Contextual Info: 8: 45 AM PM4323 OCTLIU LT Device ASSP Telecom Standard Product Data Sheet Released 0J n Mo nd ay ,3 OCTLIU LT an ua ry ,2 01 2 12 :3 PM4323 Pa rtm in er In co Device Telecom Standard Product Proprietary and Confidential Released Issue No. 5: April 2008 Do

Contextual Info: I INTERNATIONAL PB305 thru S e m ic o n d u c to r , I n c . PB310 MINIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 3.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V-O Low Leakage, typically less than 0.1 uA

Contextual Info: PART NUMBER UNCONTROLLED DOCUM ENT LDM 0725 7 Ml 30840 — REV, A 3.00 [0,118: MIN, PIN P IN 12 1,92 [0,075] 2 PLS.5 PAR AM ETER MIN P EA K W A VELEN G TH 17,80 [0,701] R EV ER S E VO LTAG E 13,97 [0,550] M AX UNITS TEST COND nm 2 .2 2 .6 2200 Vf Vr I r = 1 OO/uA

Contextual Info: SSR/U1N50A Advanced Power MOSFET FEATURES B V DSs = 500 V • Avalanche Rugged Technology II O ■ Lower Input Capacitance CO ^DS on = ■ Rugged Gate Oxide Technology 5 .5 Î 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area D-PAK ■ Lower Leakage Current : 10 uA (Max.) @ V DS = 500V

PM4354-NGI

Abstract: BD4913 X08119 PM4354-NI midcom 50436 X08308 cdma design implementation Nippon capacitors
Contextual Info: PM4354 COMET-QUAD RELEASED DATASHEET FOUR CHANNEL COMBINED E1/T1/J1 TRANSCEIVER / FRAMER PM ISSUE 7 08 :1 6: 58 PMC-1990315 1J an ua ry ,2 00 6 PM4354 W ed ne sd ay ,1 COMET-QUAD DATASHEET RELEASED ISSUE 7: NOVEMBER 2005 Do wn l oa de d by Co nt e nt T ea

UA SH 105D

Abstract: 179d 332h b4 109d c4,c5 sbi application forms Nippon 81D sh 105d PM4319 TE-32 DP 704 C
Contextual Info: :0 7: 43 AM Octal Short-Haul E1/T1/J1 Line Interface Device Telecom Standard Product Data Sheet Released Mo nd ay ,0 6J an OCTLIU-SH ua ry ,2 00 3 06 PM4319 Data Sheet Proprietary and Confidential Released Issue No. 3: May 2002 Do wn lo ad ed by ah m ed m

h 9245

Abstract: 27C128 Texas Instruments 27C128-15 27C128-17 27C128-20 27C128-25 27c128-120 27C128-30
Contextual Info: b2E D • ö^ b l T S S 0GÖ1275 ST3 ■ T I I S SMJ27C128 131 072-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY TEXAS INSTR ASIC/MEMORY S G M S 0 0 6 C -A U G U S T 19 8 6 -R E V IS E D FE BR UA RY 1993 Military Operating Temperature R a n g e .-5 5 °C to 125°C

Contextual Info: RA2505 I n ter n a tio n a l thru S e m ic o n d u c to r , I n c . RA2510 HIGH CURRENT PLASTIC SILICON RECTIFIER VOLTAGE RANGE 50 to 1000 Volts FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100 °C

206g rectifier silicon

Abstract: A 104 j
Contextual Info: RL201G thru RL207G I n ter n a tio n a l S e m ic o n d u c to r , I n c . GLASS PASSIVATED JUNCTION PLASTIC SILICON RECTIFIER /" • FEATURES: i Plastic m aterial used carries U nderw riters Laboratory recognition 94 V -0 Low Leakage at elevated tem pearture 100 ua at 100°C

Contextual Info: I n ter n a tio n a l MB1005 thru S e m ic o n d u c to r , I n c . MB1010 MINIATURE SINGLE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 10.0 Amperes FEATURES: Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low leakage, typically less than 0.1 uA

M3-12H

Abstract: SMD FUSE 140D pmc-2001578 179d 203d 332h b4 109d PMC-2020180 312H PM4318
Contextual Info: :4 4: 11 AM Octal E1/T1/J1 Line Interface Device Telecom Standard Product Data Sheet Released ua ry ,2 00 3 05 PM4318 Mo nd ay ,0 6J an OCTLIU Data Sheet Proprietary and Confidential Released Issue No. 6: May 2002 Do wn lo ad ed by ah m ed m et wa ly of sil

5LC4

Abstract: SLC4-1M
Contextual Info: i - f e i i ni SLC4-1B i n&i y ua '.a ¿nee t SLC4-1M through SSDI 1 AMP U L TR A V EAST SURFACE 100 „ E MOUNT - *0o9k0 3^ R E C OV E R Y 1,000 RECIT I F 1ER VOLTS STYLE 14849 FIRESTONE BLVD. LA MIRADA. CA 90638 TEL: 213 921-9660 FAX: (213) 921-2396 FEATURES

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . ARS/AR25 SERIES HIGH CURRENT PLASTIC SILICON RECTIFIER FEATURES: VOLT AGE RANGE 5 0 to 1 0 0 0 Volts Plastic material used carries Underwriters Laboratory recognition 94 V -0 Low Leakage at elevated tempearture 250 ua at 100°C

Contextual Info: I n t e r n a t io n a l S e m ic o n d u c t o r , I n c . 2W 005M thru M INIATURE SING LE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts FEATURES: 2W 10M v_ CURRENT: 2.0 Amperes Plastic material used carries Underwriters Laboratory recognition 94 V-O Low Leakage, typically less than 0.1 uA

IRF 9234

Abstract: major project IRF p 536 MOSFET mercedes collmer igbt MOSFET IRF 713 PD-2000-1
Contextual Info: I n t e r n at i o n a l R e c t i f i e r A n n ua l R e p o r t 1 9 9 8 “International Rectifier pioneered and leads the world in a multi-billion-dollar semiconductor category that grows faster than ICs.” about the c o m p a n y O ur technology makes electricity better

Contextual Info: 2 12 :4 0: 19 AM S/UNI -1x155 ASSP Telecom Standard Product Data Sheet Released ,3 0J an ua ry ,2 01 PM5384 In co n Mo nd ay S/UNI®-1x155 Datasheet Released Issue No. 5: February 2011 Do wn lo ad ed [c on tro lle d] by Co nt en tT ea m of Pa rtm in er SATURN® User Network Interface

BQ 6100

Abstract: svc203cp SVC303 ND3048 ND3049-3D ND3049-5E ND3050-3D ND3050-5E SVC201SPA SVC201Y
Contextual Info: - & s # « mm sn * *£ P m W «ŸBBM ft Vr m Vr (V) (V) mm £1* Ct. C j * (pF) nin typ max gs.tk Q min V r (V) mi n typ max VI (V) V2 (V) <Q) & Umax $ V r (V) f (MHz) - n f d max Ct(Vl)/Ct(V2) 199 (UA) V r (V) ND3048-5E Tan 200 25 0. 7 1.1 1. 5 8 25 50 0. 1

Contextual Info: IMTERNA TIONAL LL4678 thru LL4717 S e m ic o n d u c to r , I n c . 50 uA, LOW OPERATING CURRENT LE A D LE S S P A C K A G E FOR SUR FAC E MOUNT D O U BLE S LU G CO N STR UC TIO N MAXIMUM RATINGS * O p e ra tin g Tem pe ratu re: -55°C to + 1 25°C S to ra g e T e m p e ra tu re :

ms8128fkl

Abstract: ms8128fk
Contextual Info: 128 k x 8 SRAM Module molate MS8128FK-55/70/85 Issue 1.0 July 1988 ADVANCE PRODUCT INFORMATION ,072 x 8 CMOS High Speed Static RAM M osaic S em iconductor / - Pin Definition Features Inc. Fast Access Times of 55/70/85 55 ns Under Development JEDEC Standard 32 pin DIL footprint

UPS6150

Contextual Info: 6 Amp Schottky Rectifier UPS6150 — L .035 .072 .070 REF. .160 — i- .03S .173 Mounting Pad Dimensions o -W -[ Microsemi Catalog Num ber Industry P a rt Number Working Peak Repetitive Peak Reverse Voltage Reverse Voltage UPS6150 150V 150 V • Powerm ite 3 package

Contextual Info: 802 Series 802 Series 803 Series 51h Inches Dim. .056-.066 .052-.072 1.115-1.135 .552-.572 .490-.510 .180-.200 DIA. .750 MAX. .302-.322 A B C D E F G H hAi nn Millim eter 803 Series ¡~n i n Inches Dim. Repetitive Peak Reverse Voltage Microsemi Catalog Number